NPT IGBT Modules
Symbol Conditions Units
IGBT
Inverse Diode
TC = 25
oC
, unless otherwise specified
VCES V
IC TC= 25(80)
oC
A
ICRM A
VGES
TVj,(Tstg)
Visol
TC= 25(80)
oC, tP =1ms
AC, 1min
IF = -IC
IFRM
IFSM
TC= 25(80)
oC
TC= 25(80)
oC, tP =1ms
tP =10ms; sin.;Tj=150oC
1200
100(90)
200(180)
+20
40...+150(125)
2500
200(180)
720
V
oC
V
A
A
A
TOPERATION <
_Tstg
Freewheeling diode
IF = -IC
IFRM
IFSM
__
TC= 25(80)
oC
TC= 25(80)
oC, tP =1ms
tP =10ms; sin.;Tj=150oC
95(65)
130(90)
200(180)
1100
A
A
A
SDI100N12
Dimensions in mm (1mm = 0.0394")
Absolute Maximum Ratings
Values
SDI100N12
NPT IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
VGE(th) VGE = VCE, IC =2mA 4.5 5.5 6.5 V
ICES VGE = 0; VCE = VCES; Tj = 25(125)
oC
0.1 0.3 mA
VCE(TO) Tj = 25(125)
oC
1.4(1.6) 1.6(1.8) V
rCE VGE = 15V, Tj = 25(125)
oC
14.6(20)18.6(25.3) m
VCE(sat) IC =75A; VGE = 15V; chip level 2.5(3.1) 3(3.7) V
Cies under following conditions 5 6.6
Coes VGE = 0, VCE = 25V, f = 1MHz 0.72 0.9
Cres 0.38 0.5
LCE 30 nH
RCC'+EE' res., terminal-chip TC = 25(125)
oC
0.75(1) m
under following conditions:
td(on) VCC = 600V, IC = 75A 30 60 ns
trRGon = RGoff =15 , Tj = 125
oC
70 140 ns
td(off) VGE = ± 15V 450 600 ns
tf70 90 ns
Eon(Eoff) 10(8) mJ
Inverse Diode under following conditions:
VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)
oC
2(1.8) 2.5 V
V(TO) Tj = 125
oC
1.2 V
rTTj = 125
oC
12 15 m
IRRM IF = 75A; Tj = 25(125)
oC
27(40) A
Qrr di/dt = 800A/us uC
Err VGE = V mJ
FWD under following conditions:
VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)
oC
1.85(1.6) 2.2 V
V(TO) Tj = 125
oC
1.2 V
rTTj = 125
oC
9 11 m
IRRM IF =75A; Tj = 25
oC
30(45) A
Qrr di/dt = A/us uC
Err VGE = V mJ
Thermal Characteristics
Rth(j-c) per IGBT 0.18 K/W
Rth(j-c)D per Inverse Diode 0.5 K/W
Rth(j-c)FD per FWD 0.36 K/W
Rth(c-s) per module 0.05 K/W
Mechanical Data
Msto heatsink M6 3 5 Nm
Mtto terminals M5 2.5 5 Nm
w 160 g
TC = 25
oC
, unless otherwise specified
nF
3(10)
3.5(11)
