2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495A (Z) 1st. Edition Mar. 2001 Features * Low on-resistance R DS = 15 m typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 40 A 160 A 40 A 40 A 137 mJ 50 W Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR Avalanche current Avalanche Energy I AP * 3 EAR* 3 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK2912(L), 2SK2912(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 -- 2.5 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) -- 15 20 m I D = 20A, VGS = 10V*1 resistance RDS(on) -- 25 40 m I D = 20A, VGS = 4V*1 Forward transfer admittance |yfs| 20 35 -- S I D = 20A, VDS = 10V*1 Input capacitance Ciss -- 1500 -- pF VDS = 10V Output capacitance Coss -- 720 -- pF VGS = 0 Reverse transfer capacitance Crss -- 200 -- pF f = 1MHz Turn-on delay time t d(on) -- 20 -- ns I D = 20A, VGS = 10V Rise time tr -- 180 -- ns RL = 1.5 Turn-off delay time t d(off) -- 200 -- ns Fall time tf -- 200 -- ns Body to drain diode forward voltage VDF -- 0.95 -- V I F = 40A, VGS = 0 Body to drain diode reverse recovery time t rr -- 70 -- V I F = 40A, VGS = 0 diF/ dt = 50A/s Note: 1. Pulse test 3 2SK2912(L), 2SK2912(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area I D (A) 1000 75 300 50 25 50 100 150 Case Temperature 1 200 Tc (C) er s ms Operation in this area is limited by R DS(on) (1 sh ati on m (T c= ot) 25 C ) Typical Transfer Characteristics 10 V 6V 4.5 V (A) 4V Pulse Test 30 3.5 V 20 10 VGS = 3 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) ID 40 50 Drain Current I D (A) Op 1 10 Ta = 25 C 0.1 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 50 Drain Current DC = s s 0 0.3 0 4 PW 10 3 10 10 100 30 Drain Current Channel Dissipation Pch (W) 100 40 30 V DS = 10 V Pulse Test Tc = 75C 25C 20 -25C 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2912(L), 2SK2912(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 1.6 1.2 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 2.0 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 I D = 50 A 0.8 VGS = 4 V 0.02 0.4 20 A 10 A 10 V 0.01 0.005 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 0.05 Pulse Test 0.04 0.03 I D = 20 A V GS = 4 V 0.02 10 A 50 A 10, 20 A 0.01 0 -40 10 V 0 40 80 120 160 Case Temperature Tc (C) 1 2 10 20 50 5 Drain Current I D (A) 100 Forward Transfer Admittance vs. Drain Current 100 Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) ( ) 0 Tc = -25 C 50 25 C 20 75 C 10 5 2 V DS = 10 V Pulse Test 1 1 2 10 20 50 5 Drain Current I D (A) 100 5 2SK2912(L), 2SK2912(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 5000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 10 0.1 Ciss 1000 500 Coss 200 Crss 100 di / dt = 50 A / s V GS = 0, Ta = 25 C 20 2000 50 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) V DS 40 20 0 6 V GS 12 8 V DD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) 40 50 4 0 100 V GS (V) 1000 Switching Time t (ns) 60 V DD = 10 V 25 V 50 V 16 Gate to Source Voltage V DS (V) Drain to Source Voltage 80 30 Switching Characteristics 20 I D = 40 A 20 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 100 10 300 t d(off) 100 tf tr 30 t d(on) 10 3 1 0.1 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.3 1 3 Drain Current 10 30 I D (A) 100 2SK2912(L), 2SK2912(S) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) Reverse Drain Current I DR (A) 50 40 10 V 30 5V V GS = 0, -5 V 20 10 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 200 I AP = 40 A V DD = 25 V duty < 1 % Rg > 50 160 120 80 40 0 25 50 Avalanche Test Circuit V DS Monitor 75 100 125 150 Channel Temperature Tch (C) V SD (V) Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK2912(L), 2SK2912(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.5 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m 100 m Pulse Width PW (S) Switching Time Test Circuit 1 10 Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK2912(L), 2SK2912(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SK2912(L), 2SK2912(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SK2912(L), 2SK2912(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SK2912(L), 2SK2912(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12