2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-495A (Z)
1st. Edition
Mar. 2001
Features
• Low on-resistance
RDS = 15 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
LDPAK
G
D
S
2SK2912(L), 2SK2912(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID40 A
Drain peak current ID(pulse)*1160 A
Body to drain diode reverse drain current IDR 40 A
Avalanche current IAP*340 A
Avalanche Energy EAR*3137 mJ
Channel dissipation Pch*250 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK2912(L), 2SK2912(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16V, VDS = 0
Zero gate voltege drain
current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) —1520mΩI
D
= 20A, VGS = 10V*1
resistance RDS(on) —2540mΩI
D
= 20A, VGS = 4V*1
Forward transfer admittance |yfs|2035—SI
D
= 20A, VDS = 10V*1
Input capacitance Ciss — 1500 — pF VDS = 10V
Output capacitance Coss — 720 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1MHz
Turn-on delay time td(on) — 20 — ns ID = 20A, VGS = 10V
Rise time tr— 180 — ns RL = 1.5Ω
Turn-off delay time td(off) — 200 — ns
Fall time tf— 200 — ns
Body to drain diode forward
voltage VDF — 0.95 — V IF = 40A, VGS = 0
Body to drain diode reverse
recovery time trr —70—V I
F
= 40A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
2SK2912(L), 2SK2912(S)
4
Main Characteristics
100
75
50
25
050 100 150 200 0.1 0.3 1 310 30 100
50
40
30
20
10
012345
Tc = 75°C
25°C
–25°C
50
40
30
20
10
0246810
3.5 V
4 V
V = 3 V
GS
1000
300
100
30
10
3
1
0.3
0.1 Ta = 25 °C
10 V
6 V
4.5 V
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Pulse Test
V = 10 V
Pulse Test
DS
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
100 µs
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25°C)
Operation in
this area is
limited by RDS(on)
2SK2912(L), 2SK2912(S)
5
2.0
1.6
1.2
0.8
0.4
048
12 16 20 1 10 100250
0.5
0.2
0.1
0.02
0.05
0.01
0.005
0.05
0.04
0.03
0.02
0.01
–40 0 40 80 120 160
012510 20 50 100
100
50
10
20
2
5
1
205
I = 20 A
D
V = 4 V
GS
10 V
10 A
10, 20 A
I = 50 A
D
10 A
20 A
V = 4 V
GS
10 V
50 A
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
Pulse Test
25 °C
Tc = –25 °C
75 °C
V = 10 V
Pulse Test
DS
2SK2912(L), 2SK2912(S)
6
0.1 0.3 1 3 10 30 100 01020304050
50
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
20 40 60 80 100
0
1000
300
30
100
3
10
1
0.1 0.3 1 3 10 30 100
1000
500
100
200
20
50
10
I = 40 A
D
VGS
VDS
V = 50 V
25 V
10 V
DD
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
V = 10 V
25 V
50 V
DD
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
tf
r
td(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
2SK2912(L), 2SK2912(S)
7
50
40
30
20
10
00.4 0.8 1.2 1.6 2.0
V = 0, –5 V
GS
10 V
5 V
200
160
120
80
40
25 50 75 100 125 150
0
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50Ω
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
I = 40 A
V = 25 V
duty < 1 %
Rg > 50
AP
DD
Ω
2SK2912(L), 2SK2912(S)
8
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2912(L), 2SK2912(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
—
—
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
2SK2912(L), 2SK2912(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
—
—
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2912(L), 2SK2912(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
—
—
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
2SK2912(L), 2SK2912(S)
12
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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