IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD15N60RF TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz Datasheet IndustrialPowerControl IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering *OptimizedEon,EoffandQrrforlowswitchinglosses *Operatingrangeof4to30kHz *SmoothswitchingperformanceleadingtolowEMIlevels *Verytightparameterdistribution *Maximumjunctiontemperature175C *Shortcircuitcapabilityof5s *Bestinclasscurrentversuspackagesizeperformance *QualifiedaccordingtoJEDECfortargetapplications *Pb-freeleadplating;RoHScompliant(soldertemperature 260C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: Domesticandindustrialdrives: *Compressors *Pumps *Fans KeyPerformanceandPackageParameters Type IKD15N60RF VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 600V 15A 2.2V 175C K15R60F PG-TO252-3 2 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25C TC=100C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A Turn off safe operating area VCE600V,Tvj175C,tp=1s - 35.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25C TC=100C IF 30.0 15.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A Gate-emitter voltage VGE 20 V Short circuit withstand time VGE=15.0V,VCC400V Allowed number of short circuits < 1000 Time between short circuits: 1.0s Tvj=150C tSC PowerdissipationTC=25C Ptot 250.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C s 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,1) junction - case Rth(j-c) 0.60 K/W Diode thermal resistance,2) junction - case Rth(j-c) 2.00 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 4 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=15.0A Tvj=25C Tvj=175C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25C Tvj=175C - - StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=0.25mA,VCE=VGE Zero gate voltage collector current1) ICES 40.0 A 1000.0 Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=15.0A - 6.6 - S Integrated gate resistor rG none ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 961 - - 53 - - 33 - - 90.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: 1.0s 1) VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=15.0A, VGE=15V VGE=15.0V,VCC400V, tSC5s Tvj=25C - pF 112 Not subject to production test - verified by design/characterization 5 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 13 - ns - 15 - ns - 160 - ns - 17 - ns - 0.27 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.25 - mJ Total switching energy Ets - 0.52 - mJ - 74 - ns - 0.42 - C - 13.2 - A - -211 - A/s Tvj=25C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, rG=15.0,L=50nH, C=34pF L,CfromFig.E DiodeCharacteristic,atTvj=25C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25C, VR=400V, IF=15.0A, diF/dt=1030A/s dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 13 - ns - 17 - ns - 173 - ns - 20 - ns - 0.45 - mJ IGBTCharacteristic,atTvj=175C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.33 - mJ Total switching energy Ets - 0.78 - mJ - 142 - ns - 1.00 - C - 16.6 - A - -133 - A/s Tvj=175C, VCC=400V,IC=15.0A, VGE=0.0/15.0V, rG=15.0,L=50nH, C=34pF L,CfromFig.E DiodeCharacteristic,atTvj=175C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175C, VR=400V, IF=15.0A, diF/dt=880A/s dirr/dt 6 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 10 9 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 8 7 6 5 4 3 10 tp=10s 20s 50s 100s 1 200s 500s 2 DC 1 0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj175C,Ta=55C,D=0.5,VCE=400V, VGE=15/0V,rG=15,PCBmountingwith thermal vias and heatsink, see Appnote: www.infineon.com/igbt) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25C,Tvj175C;VGE=15V) 250 30 225 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 200 175 150 125 100 75 25 20 15 10 50 5 25 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj175C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) 7 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 45 45 VGE=20V 40 15V 35 IC,COLLECTORCURRENT[A] 35 IC,COLLECTORCURRENT[A] 40 17V 13V 30 11V 9V 25 7V 20 15 17V 30 11V 5 2 3 0 4 9V 7V 15 5 1 13V 20 10 0 15V 25 10 0 VGE=20V 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25C) 3 4 4.0 Tj=25C Tj=175C VCEsat,COLLECTOR-EMITTERSATURATION[V] 40 35 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tvj=175C) 45 30 25 20 15 10 5 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 6 8 10 12 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 14 VGE,GATE-EMITTERVOLTAGE[V] IC=1A IC=5A IC=15A IC=30A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 10 1 100 10 1 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 5 10 15 IC,COLLECTORCURRENT[A] 20 25 30 35 40 45 50 rG,GATERESISTOR[] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175C,VCE=400V, VGE=15/0V,rG=15,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 6 5 4 3 2 1 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15,Dynamictestcircuitin Figure E) typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,25mA) 9 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 2.0 1.4 Eoff Eon Ets 1.2 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 1.5 1.0 0.5 1.0 0.8 0.6 0.4 0.2 0.0 0.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0 5 10 15 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175C,VCE=400V, VGE=15/0V,rG=15,Dynamictestcircuitin Figure E) 25 30 35 40 45 50 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175C,VCE=400V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) 0.9 1.0 Eoff Eon Ets Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 0.8 E,SWITCHINGENERGYLOSSES[mJ] 20 rG,GATERESISTOR[] 0.7 0.6 0.5 0.4 0.3 0.8 0.6 0.4 0.2 0.2 0.1 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=15A,rG=15,Dynamictestcircuitin Figure E) 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175C,VGE=15/0V, IC=15A,rG=15,Dynamictestcircuitin Figure E) Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 16 120V 480V 1000 Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 4 2 0 0 20 40 60 80 10 100 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=15A) 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 200 12 180 tSC,SHORTCIRCUITWITHSTANDTIME[s] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 160 140 120 100 80 60 40 10 8 6 4 2 20 0 12 13 14 15 16 17 18 19 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE400V,startatTvj=25C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE400V,startatTvj=150C) 11 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 ri[K/W]: 0.0478 0.3033 0.2438 0.0281 i[s]: 9.8E-5 4.4E-4 2.0E-3 0.03723 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.393 1.0808 0.4767 0.0568 i[s]: 1.2E-4 3.4E-4 1.9E-3 0.02678 0.01 1E-7 1 1E-6 tp,PULSEWIDTH[s] 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 200 1.2 Tj=25C, IF = 15A Tj=175C, IF = 15A Tj=25C, IF = 15A Tj=175C, IF = 15A Qrr,REVERSERECOVERYCHARGE[C] 180 trr,REVERSERECOVERYTIME[ns] 1E-5 160 140 120 100 80 60 40 1.0 0.8 0.6 0.4 0.2 20 0 700 800 900 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/s] 0.0 700 800 900 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/s] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries 25.0 0 Tj=25C, IF = 15A Tj=175C, IF = 15A Tj=25C, IF = 15A Tj=175C, IF = 15A -50 20.0 dIrr/dt,diodepeakrateoffallofIrr[A/s] Irr,REVERSERECOVERYCURRENT[A] 22.5 17.5 15.0 12.5 10.0 7.5 5.0 -100 -150 -200 -250 -300 -350 2.5 0.0 700 800 900 -400 700 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/s] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 900 1000 1100 1200 1300 1400 1500 Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 45 3.0 Tj=25C, VGE=0V IF=1A IF=5A IF=15A IF=30A Tj=175C, VGE=0V 40 2.5 VF,FORWARDVOLTAGE[V] 35 IF,FORWARDCURRENT[A] 800 diF/dt,DIODECURRENTSLOPE[A/s] 30 25 20 15 10 2.0 1.5 1.0 5 0 0 1 2 3 0.5 4 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries PG - TO252 - 3 14 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.3,2014-03-12 IKD15N60RF TRENCHSTOPTMRC-DrivesFastSeries RevisionHistory IKD15N60RF Revision:2014-03-12,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-02-24 Final data sheet 2.2 2014-02-26 Without PB free logo 2.3 2014-03-12 Storage temp -55...+150C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726Munchen,Germany (c)2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.3,2014-03-12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IKD15N60RFATMA1