IGBT
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD15N60RF
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz
Datasheet
IndustrialPowerControl
2
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
Features:
TRENCHSTOPTMReverseConducting(RC)technologyfor600V
applicationsoffering
•OptimizedEon,EoffandQrrforlowswitchinglosses
•Operatingrangeof4to30kHz
•SmoothswitchingperformanceleadingtolowEMIlevels
•Verytightparameterdistribution
•Maximumjunctiontemperature175°C
•Shortcircuitcapabilityof5µs
•Bestinclasscurrentversuspackagesizeperformance
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant(soldertemperature
260°C,MSL1)
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
Domesticandindustrialdrives:
•Compressors
•Pumps
•Fans
G
C
E
G
E
C
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKD15N60RF 600V 15A 2.2V 175°C K15R60F PG-TO252-3
3
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Maximumratings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC30.0
15.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs - 35.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF30.0
15.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
5
µs
PowerdissipationTC=25°C Ptot 250.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,1)
junction - case Rth(j-c) 0.60 K/W
Diode thermal resistance,2)
junction - case Rth(j-c) 2.00 K/W
Thermal resistance, min. footprint
junction - ambient Rth(j-a) 75 K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a) 50 K/W
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
5
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=175°C
-
-
2.20
2.30
2.50
-
V
Diode forward voltage VF
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=175°C
-
-
2.10
2.00
2.40
-
V
Gate-emitter threshold voltage VGE(th) IC=0.25mA,VCE=VGE 4.3 5.0 5.7 V
Zero gate voltage collector current1) ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
1000.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=15.0A - 6.6 - S
Integrated gate resistor rGnone Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 961 -
Output capacitance Coes - 53 -
Reverse transfer capacitance Cres - 33 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=15.0A,
VGE=15V - 90.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
IC(SC)
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=25°C
-
112
- A
1) Not subject to production test - verified by design/characterization
6
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 13 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 160 - ns
Fall time tf- 17 - ns
Turn-on energy Eon - 0.27 - mJ
Turn-off energy Eoff - 0.25 - mJ
Total switching energy Ets - 0.52 - mJ
Tvj=25°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=50nH,
Cσ=34pF
Lσ,CσfromFig.E
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 74 - ns
Diode reverse recovery charge Qrr - 0.42 - µC
Diode peak reverse recovery current Irrm - 13.2 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -211 - A/µs
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=1030A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 13 - ns
Rise time tr- 17 - ns
Turn-off delay time td(off) - 173 - ns
Fall time tf- 20 - ns
Turn-on energy Eon - 0.45 - mJ
Turn-off energy Eoff - 0.33 - mJ
Total switching energy Ets - 0.78 - mJ
Tvj=175°C,
VCC=400V,IC=15.0A,
VGE=0.0/15.0V,
rG=15.0Ω,Lσ=50nH,
Cσ=34pF
Lσ,CσfromFig.E
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 142 - ns
Diode reverse recovery charge Qrr - 1.00 - µC
Diode peak reverse recovery current Irrm - 16.6 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -133 - A/µs
Tvj=175°C,
VR=400V,
IF=15.0A,
diF/dt=880A/µs
7
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V,
VGE=15/0V,rG=15Ω,PCBmountingwith
thermal vias and heatsink, see Appnote:
www.infineon.com/igbt)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
0.1 1 10 100
0
1
2
3
4
5
6
7
8
9
10
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
tp=10µs
20µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
25
50
75
100
125
150
175
200
225
250
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
0 25 50 75 100 125 150 175
0
5
10
15
20
25
30
8
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Figure 5. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 1 2 3 4
0
5
10
15
20
25
30
35
40
45
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 6. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 1 2 3 4
0
5
10
15
20
25
30
35
40
45
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 7. Typicaltransfercharacteristic
(VCE=10V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
4 6 8 10 12 14
0
5
10
15
20
25
30
35
40
45
Tj=25°C
Tj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC=1A
IC=5A
IC=15A
IC=30A
9
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0
1
10
100
td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 10 15 20 25 30 35 40 45 50
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=15A,rG=15Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
td(off)
tf
td(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0,25mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150 175
1
2
3
4
5
6
7
typ.
min.
max.
10
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 27.5 30.0
0.0
0.5
1.0
1.5
2.0
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=175°C,VCE=400V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
5 10 15 20 25 30 35 40 45 50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=15A,rG=15Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=15/0V,
IC=15A,rG=15Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450
0.0
0.2
0.4
0.6
0.8
1.0
Eoff
Eon
Ets
11
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Figure 17. Typicalgatecharge
(IC=15A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100
0
2
4
6
8
10
12
14
16
120V
480V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTvj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
12 13 14 15 16 17 18 19 20
0
20
40
60
80
100
120
140
160
180
200
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTvj=150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 11 12 13 14 15 16 17 18 19
0
2
4
6
8
10
12
12
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Figure 21. IGBTtransientthermalimpedanceasa
functionofpulsewidth1)(seepage4)
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.0478
9.8E-5
2
0.3033
4.4E-4
3
0.2438
2.0E-3
4
0.0281
0.03723
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth2)(seepage4)
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.393
1.2E-4
2
1.0808
3.4E-4
3
0.4767
1.9E-3
4
0.0568
0.02678
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
700 800 900 1000 1100 1200 1300 1400 1500
0
20
40
60
80
100
120
140
160
180
200
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
700 800 900 1000 1100 1200 1300 1400 1500
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
13
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
Figure 25. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
700 800 900 1000 1100 1200 1300 1400 1500
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
22.5
25.0
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Figure 26. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
700 800 900 1000 1100 1200 1300 1400 1500
-400
-350
-300
-250
-200
-150
-100
-50
0
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Figure 27. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0 1 2 3 4
0
5
10
15
20
25
30
35
40
45
Tj=25°C, VGE=0V
Tj=175°C, VGE=0V
Figure 28. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
0.5
1.0
1.5
2.0
2.5
3.0
IF=1A
IF=5A
IF=15A
IF=30A
14
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
PG -TO252-3
15
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
t
a
a
b
b
t
d(off)
t
f
t
r
t
d(on)
90% I
C
10% I
C
90% I
C
10% I
C
t
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
t
t
1
t
4
2% I
C
10% V
GE
2% V
CE
t
2
t
3
16
IKD15N60RF
TRENCHSTOPTMRC-DrivesFastSeries
Rev.2.3,2014-03-12
RevisionHistory
IKD15N60RF
Revision:2014-03-12,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2012-02-24 Final data sheet
2.2 2014-02-26 Without PB free logo
2.3 2014-03-12 Storage temp -55...+150°C
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