Silicon Diodes Siticon Junction Diodes in DO-7 glass encapsulation for general applications Type MaximumRatings _ Characteristics at T,,,, = 25 C @ @ . F = 2506 T = 25C Ve=1V Ve = 10 amb amb R f = 0,5 MHz Oamb VeVfomA Prop MW T;,C IemA Ir uA @ VaV C pF C/mw BAY 17 15 200 ') 400 *) 150 > 100 0,01 (< 0,1) 12 1,2 _ <0,31') BAY 18 60 200 ') 400 ') 150 > 100 0,01 (< 0,1) 50 1,2 < 0,31 ') BAY 19 120 200 ') _ 400 ') 150 > 100 0,02 (< 0,1) 100 1,2 < 0,31 ') BAY 20 180 200 ') 400 ') 150 > 100 0,03 (< 0,1) 150 1,2 < 0,31 ') BAY 21 350 200 ') 400 ') 150 > 100 0,03 (< 0,1) 300 1,2 < 0,31 ') BA 170 20 150 ') 300 *) 150 > 80 <3 15 _ <0,41') Valid provided that connection leads are kept at a temperature of 25C at a distance of 4mm from the case. Silicon High-Voltage Junction Diodes in long glass encapsulation. Type Maximum Ratings Characteristics at Tamp = 25C @ @ @ t<1tms T 45 C Ve=3V am Oamp VeV Vem V lo mA 7; C fe mA IpuA @ VpV c/mw BAY 23 1000 1500 50 150 > 80 <1 1000 _ < 0,42 BAY 24 1500 2250 50 150 > 80 <1 7 1500 _ < 0,42 BAY 25 2000 3000 50 150 > 80 <1 ____ 2000 < 0,42 ee BAY 26 3000 4500 50 150 > 80 <3 3000 < 0,42 Silicon Diode in DO-7 glass encapsulation, suitable for the protection of telephone relay contacts. Guaranteed operation during breakdown region. Type Maximum Ratings Characteristics at Tamb=25C _ @ @ ? 5 C P= 1055 10 s 103s 107s 1s F = 25C = 0,1 mA fe = 100 mA Vp = 70V fe = 150 mA amb p amb = 100C l Irm mA laamA mA mA mA MA Piop MW CT, OC Viarie V Viaryr V Ip uA VeV BAW 21 150 2000 2000 100 4 2 200 150 90... 150 > 90 < 0,1 < 1,01 Silicon Diode in epoxy encapsulation for high speed switching e.g. diode clamping in colour TV. Type Maximum Ratings Characteristics at T,,,,, = 25 C at at at at Ip = 100 mA Vp = 400V Ip = 10 mA Vp = 150V T) = 75C Ip = 10 mA f= 1 MHz Ve V VemV Ip MA lem MA VeV Tr uA t,ns C pF BA 157 400 400 100 500 <1 <1 < 300 3 Red = New Type 34