ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2218A to 2N2219A
DESCRIPTION SYMBOL TEST CONDITION 2218A 2219A UNIT
DC Current Gain hFE IC=0.1mA,VCE=10V >20 >35
IC=1mA,VCE=10V >25 >50
IC=10mA,VCE=10V >35 >75
Ta=55 deg C
IC=10mA,VCE=10V >15 >35
IC=150mA,VCE=10V 40-120 100-300
IC=150mA,VCE=1V >20 >50
IC=500mA,VCE=10V >25 >40
DYNAMIC CHARACTERISTICS ALL f=1kHz
Small Signal Current Gain hfe IC=1mA, VCE=10V 30-150 50-300
IC=10mA, VCE=10V 50-300 75-375
Input Impedance hie IC=1mA, VCE=10V 1.0-3.5 2.0-8.0 kohms
IC=10mA, VCE=10V 0.2-1.0 0.25-1.25
Voltage Feedback Ratio hre IC=1mA, VCE=10V <5.0 <8.0 x10-4
IC=10mA, VCE=10V <2.5 <4.0
Out put Admittance hoe IC=1mA, VCE=10V 3.0-15 5.0-35 umhos
IC=10mA, VCE=10V 10-100 25-200
Collector Base Time Constant rb'Cc IE=20mA, VCB=20V <150 <150 ps
f=31.8MHz
Real Part Common-Emitter High Frequency Re(hie) IC=20mA, VCE=20V <60 <60 ohms
Input Impedance f=300MHz
Noise Figure NF IC=100uA, VCE=10V - <4.0 dB
Rs=1kohms, f=1kHz
DYNAMIC CHARACTERISTICS
Transistors Frequency ft IC=20mA, VCE=20V >250 >300 MHz
f=100MHz
Out-Put Capacitance Cob VCB=10V, IE=0 <8.0 <8.0 pF
f=100kHz
Input Capacitance Cib VEB=0.5V, IC=0 <25 <25 pF
f=100kHz
SWITCHING Time
Delay time td IC=150mA,IB1=15mA <10 ns
Rise time tr VCC=30V,VBE=0.5V - <25 ns
Storage time ts IC=150mA, IB1= <225 ns
Fall time tf IB2=15mA, VCC=30V - <60 ns
*Pulse Condition: Pulse Width=300us, Duty Cycle=2%