Product Data Sheet July 1, 2002 36 - 40 GHz Power Amplifier TGA1073C-SCC Key Features and Performance * * * * * * 0.25um pHEMT Technology 36-40 GHz Frequency Range 26 dBm Nominal Pout @ P1dB, 38GHz 15 dB Nominal Gain Bias 5-7V @ 240 mA Chip Dimensions 2.4 mm x 1.45 mm Primary Applications The TGA1073C provides 24 dBm of output power at 1dB gain compression and 26 dBm saturated output power across the 36-40 GHz with a typical small signal gain of 15 dB. The TGA1073C requires a minimum of off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. * Point-to-Multipoint Radio TGA1073C Typical RF Performance (Fixtured) 20 15 S21 10 5 0 -5 -10 S22 -15 S11 -20 -25 33 34 35 36 37 38 39 40 41 42 43 Frequency (GHz) TGA1073C Typical RF Performance (Fixtured) Typical Performance, 36-40 GHz Parameter Small Signal Gain Gain Flatness Output P1dB Saturated Output Power Saturated PAE Output OTOI IMR3 @ SCL = P1dB - 10dB Input Return Loss Output Return Loss Reverse Isolation Quiescent Current Unit +5V Supply +6V Supply +7V Supply dB 15 dBpp 1 dBm 24 25 26 dBm 26 27 28 % 23 22 20 dBm 34 dBc 34 dB -10 dB -8 dB -35 mA 225 240 260 Output Power @ P1dB (dBm) 33 50 30 IMR3 @ SCL=P1dB-10dB (dBc) The two-stage design consists of two 400 m input devices driving four 400 m output devices. Point-to-Point Radio Gain and Return Loss (dB) The TriQuint TGA1073C-SCC is a two stage PA MMIC design using TriQuint's proven 0.25 m Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio and point-to-multipoint systems. * 48 P1dB 27 46 24 44 21 42 VD = +5V, +6V, +7V 18 40 15 38 12 36 IMR3 @ VD = +6V 9 34 6 32 3 30 36 37 38 39 40 41 42 Frequency (GHz) TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 Product Data Sheet July 1, 2002 TGA1073C-SCC TABLE I MAXIMUM RATINGS 6/ SYMBOL VALUE NOTES POSITIVE SUPPLY VOLTAGE 8V 5/ POSITIVE SUPPLY CURRENT 480 mA 1/, 5/ NEGATIVE GATE CURRENT 28.16 mA PIN INPUT CONTINUOUS WAVE POWER 21.2 dBm 5/ PD POWER DISSIPATION 2.16 W 3/, 5/ + I+ V I - TCH TM TSTG PARAMETER 0 OPERATING CHANNEL TEMPERATURE 150 C 2/, 3/, 4/ 0 MOUNTING TEMPERATURE (30 SECONDS) 320 C -65 to 150 0C STORAGE TEMPERATURE 1/ Total current for all stages. 2/ These ratings apply to each individual FET 3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 2.1 E+7 to 1.9E+6 hours. 4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 6/ These ratings represent the maximum operable values for this device. TABLE II DC SPECIFICATIONS (100%) (TA = 25 C + 5 C) NOTES 1/ SYMBOL LIMITS UNITS MIN MAX IDSS1 40 188 mA GM1 88 212 mS 1/ |VP1| 0.5 1.5 V 1/ |VP2| 0.5 1.5 V 1/ |VP3-6| 0.5 1.5 V 1/ |VBVGD1,2| 11 30 V 1/ |VBVGS1| 11 30 V VP, VBVGD, and VBVGS are negative. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Product Data Sheet July 1, 2002 TGA1073C-SCC TABLE III RF SPECIFICATIONS (TA = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS 6V @ 240mA VALUE MIN TYP UNITS MAX SMALL-SIGNAL GAIN MAGNITUDE 36 - 39 GHz 12 15 dB 40 GHz 9 14 dB POWER OUTPUT AT 1 dB GAIN COMPRESSION 37 GHz 23 26 dBm 38.5 GHz 23 26 dBm 40 GHz 21 25 dBm 1/ INPUT RETURN LOSS MAGNITUDE 36 - 40 GHz -10 dB 1/ OUTPUT RETURN LOSS MAGNITUDE 36 - 40 GHz -8 dB 2/ OUTPUT THIRD ORDER INTERCEPT 33 dBm 1/ 1/ RF probe data is taken at 1 GHz steps. 2/ Minimum output third-order intercept (OTOI) is generally 6dB minimum above the 1dB compression point (P1dB). Calculations are based on standard two-tone testing with each tone approximately 10dB below the nominal P1dB. Factors that may affect OTOI performance include device bias, measurement frequency, operating temperature, output interface and output power level for each tone. TABLE IV RELIABILITY DATA* PARAMETER RJC Thermal Resistance (channel to backside of carrier plate) BIAS CONDITIONS VD (V) ID (mA) 6 240 PDISS (W) TCH (oC) RJC (C/W) TM (HRS) 1.44 116.7 32.43 2.1E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model analysis. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Product Data Sheet July 1, 2002 TGA1073C-SCC Mechanical Characteristics GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4 Product Data Sheet July 1, 2002 TGA1073C-SCC 1F Cap on Supply Line VG 0.01F 100pF 100pF RF In 100pF RF Out 100pF 1F Cap on Supply Line 0.01F VD Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 Product Data Sheet July 1, 2002 TGA1073C-SCC Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 6