TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
Jul y 1, 2002
1
36 - 40 GHz Power Amplifier TGA1073C-SCC
Key Features and Perfo rmance
• 0.25um pHEMT Technology
• 36-40 G Hz Frequency Range
• 26 dBm Nominal Pout @ P1dB, 38GHz
• 15 dB No minal Gain
• Bias 5-7 V @ 240 mA
• Chip Dimensions 2.4 mm x 1.45 mm
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Radio
The TriQuint TGA1073C-SCC is a two stage PA MMIC
design using TriQuint’s proven 0.25 µm Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.
The two-stage design consists of two 400 µm input
devices driving four 400 µm output devices.
The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.
The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.
-25
-20
-15
-10
-5
0
5
10
15
20
33 34 35 36 37 38 39 40 41 42 43
TGA1073C Typical RF Performance (Fixtured)
Ga in and Return Loss (dB )
Frequency (GHz)
S21
S11
S22
TGA1073C Typical RF Performance (Fixtured)
Output Power @ P1dB (dBm)
Frequency (GHz)
3
6
9
12
15
18
21
24
27
30
33
36 37 38 39 40 41 4230
32
34
36
38
40
42
44
46
48
50
VD = +5V, +6V, +7V
P1dB
IMR3 @ VD = +6V
IMR3 @ SCL=P1dB-10dB (dBc)
Paramete
r
Uni
t
+5V Su
pp
l
y
+6V Su
pp
l
y
+7V Su
pp
l
y
Sm all Si
g
n a l Ga in d B 1 5
G ain Flatness dB pp 1
Ou tp u t P 1 d
B
dBm 2
4
25 2
6
S a tu ra te d O u tp u t P o w e r d B m 2
6
2
7
2
8
Saturated PAE
%
2
3
22 2
0
Output OTOI dBm 3
4
IM R3 @ S CL = P1dB - 10dB dBc 3
4
In p ut Re tu rn Lo s s dB -1 0
O u tp u t R e tu rn L o ss d B -8
R everse Isolation dB -35
Q uiescent Current m
A
225 24
26
Typical Performance, 36-40 GHz
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
Jul y 1, 2002
2
TABLE I
MAXIMUM RATINGS 6/
SYMBOL PARAMETER VALUE NOTES
V+POSITIVE SUPPLY VOLTAGE 8 V 5/
I+POSITIVE SUPPLY CURRENT 480 mA 1/, 5/
I-NEGATIVE GATE CURRENT 28.16 mA
PIN INPUT CONTINUOUS WAVE POWER 21.2 dB m 5/
PDPOWER DISSIPATION 2.16 W 3/, 5/
TCH OPERATING CHANNEL TEMPERATURE 150 0C 2/, 3/, 4/
TMMOUNTING T E MPERATURE
(30 SECONDS) 320 0C
TSTG STORAGE TEMPERATURE -65 to 150 0C
1/ Total current for all stages.
2/ These ratings apply to each individual FET
3/ When operated at this bias co ndition with a base plate temperature of 70 0C, the median life is reduced from
2.1 E+7 to 1.9E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life,
it is recommended that junctio n temperatures be maintained at the lowest possible levels.
5/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
6/ These ratings represent the maximum operable values for this device.
TGA1073C-SCC
TABLE II
DC SPECIFIC A TIONS (100%)
(TA = 25 °C + 5 °C)
NOTES SYMBOL LIMITS UNITS
MIN MAX
IDSS1 40 188 mA
GM1 88 212 mS
1/ |VP1|0.51.5 V
1/ |VP2|0.51.5 V
1/ |VP3-6|0.5 1.5 V
1/ |VBVGD1,2|11 30 V
1/ |VBVGS1|11 30 V
1/ VP, VBVGD, and VBVGS are negative.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
Jul y 1, 2002
3
TABLE III
RF SPECIFICATIONS
(TA = 25°C + 5°C)
NOTE TEST MEASUREMENT
CONDITIONS VALUE UNITS
6V @ 240mA MIN TYP MAX
1/ SMALL-SIGNAL
GAIN MAGNITUDE 36 – 39 GHz
40 GHz
12
9
15
14
dB
dB
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
37 GHz
38.5 GHz
40 GHz
23
23
21
26
26
25
dBm
dBm
dBm
1/ INPUT RETURN LOSS
MAGNITUDE 36 – 40 GHz -10 dB
1/ OUTPUT RETURN LOSS
MAGNITUDE 36 – 40 GHz -8 dB
2/ OUTPUT THIRD ORDER
INTERCEPT 33 dBm
1/ RF probe data is taken at 1 GHz steps.
2/ Minimum output third-order intercept (OTOI) is generally 6dB minimum above the 1dB compression point
(P1dB). Calculations are based on standard two-tone testing with each tone approximately 10dB below the
nominal P1dB. Factors that may affect OTOI performance include device bias, measurement frequency, operating
temperature, output interface and output power level for each tone.
TGA1073C-SCC
TABLE IV
RELIABILITY DATA*
BIAS
CONDITIONS
PARAMETER
VD (V) ID (mA)
PDISS
(W) TCH
(oC) RθJC
(°C/W) TM
(HRS)
RθJC Thermal Resistance
(channel to backside of carrier plate) 6 240 1.44 116.7 32.43 2.1E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate
temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
* This information is a result of a thermal model analysis.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
Jul y 1, 2002
4
Mechanical Characteristics
TGA1073C-SCC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
Jul y 1, 2002
5
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
1
µ
F Cap on
Supply Line
100pF
0.01
µ
F
100pF100pF
V
G
V
D
RF In RF Out
0.01
µ
F
100pF
1
µ
F Cap on
Supply Line
TGA1073C-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Product Data Sheet
Jul y 1, 2002
6
TGA1073C-SCC
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• De vices must be stored in a dry nitrog en atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire shou l d not be used.
• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200C.