Single Diode Schottky Barrier Diode ee MS+@i OUTLINE Package : M1F 40V 1.5A e/)\QJSMD @ Small SMD e (EIR=0.05mA Low In=0.05mA eo mie eter LIC< bh eA4 vF VOR eDC/DCIVI\-# eRe, TL, OA tgs IB. KS Flies Mew RATINGS Resistance for thermal run-away @ Home Appliance, Game, Office Automation Communication, Portable set AYE? Cathode mark Weight 0.027g(Typ) Switching Regulator 1 DC/DC Converter L4 Unit-mm SEEM IOv Titer Webtt 4 bit CER de) & OB F Su. $eRIZeAR LOM TC SIRE CHEF Bu. For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection". @i@xtHATH Absolute Maximum Ratings (HED TI=25C) Item Symbol] Conditions hee MiFJ4 Unit CAE mI Storage Temperature Tstg d9~150 e fet bie . Operation Junction Temperature Tj 150 Cc 2 TE r Maximum Fleverse Voltage Vem 40 V cae TY PRE Hh ae I 50H 2 eee, Wee a=3ll o, glass-epoxy substrate 1.0 \ Average Rectified Forward Current O 50Hz sine wave, Resistance load Tanai 2S > MATE 15 f e** On alumina substrate i st AA FH I SOHzIEGkR, JER LI ob A, T] = 25T 30 A Peak Surge Forward Current FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25C @BAN- MASH Electrical Characteristics G#zOe T/=25C) _= vo Ase EE Vr Ir= LOA. pulse measurement MAX 0.57 V Forward Volta z ALANS wees Ip= L5A, Please MAX 0.63 He 7 4 23 A le Reverse Current Tr Vr=VrM, pulse near eanent MAX 0.05 mA Hear tent : ss ares: r ; si Junction Capacitance Cj f=1MHz, Vr=10V TYP 65 pF : Ba FA ajl Junction to lead MAX 20 Sead TF) > bab ; Thermal Resistance Bia Heer a UY On glass-epoxy substrate MAX 186 C/W Junction to ambient Fie 2 PHAGE On alurnina substrate MAX 108 48 (J532-1) www.shindengen.co.jp/product/semi/ Single SBD Small SMD M1FJ4 Miistt) CHARACTERISTIC DIAGRAMS I ete MBAR ARR PARTUM iin et Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability S a poche 2 Sine wave a ee D=tp/T a ys i T & lms 1Oms! s : Tj =15FC ie ~~ Tevele rhea i e 7 a 3 2 ee = 2 5 Tj=3C 5 3 ceete 5 a 2 3 dead it z (MAX) g z 5 = Ti=180C(TYP) ay Th= 25C(MAX) 7" a @, a SE T= 25'C(TYP) 7 5 e Tht 5 [Pulse measurement] & Forward Voltage Vr (VJ Average Rectified Forward Current Io (A) Number of Cycles (cycle) HEA GE RAIA ARR HoSh Reverse Current Reverse Power Dissipation Junction Capacitance 1000 2 - 4 te < & o I re 5 = iil o 5 g & E a g & ool 5 F 5 5 5 = O00 BS s & a a x ef 2 ou a oo z 3 ce [Pulse measurement] ; iitt ij i qr az 05 1 2 40 Reverse Voltage Vr (V) Reverse Voltage Vr (V) Reverse Voltage Vr [V) T4L-F4YFA7 Ta-lo F4LF4yFA7 Ta-lo Derating Curve Ta-lo Derating Curve Ta-lo { gestek-n a. _ 1Ve moi VR=20V ee D=tp/T On glass-epoxy substrate Average Rectified Forward Current lo (A) Average Rectified Forward Current Io (A) Ambient Temperature Ta (C) Ambient Temperature Ta (C) * Sine wave (i 50Hz Cillig LT E . * 50Hz sine wave is used for measurements. EMER LOPHES MM o8 9 7 A hfs TB) ET. Typical lt#iatin ede LTE TF. * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ Ges2-1) 49