FDY3000NZ Rev B www.fairchildsemi.com
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown
Voltage
VGS = 0 V, ID = 250 PA20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, Referenced to 25qC 14 mV/qC
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA
VGS = r 12 V, VDS = 0 V r 10 PA
IGSS Gate–Body Leakage,
VGS = r 4.5 V, VDS = 0 V r 1 PA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA0.6 1.0 1.3 V
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC– 3 mV/qC
RDS(on) Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 150 mA
VGS = 4.5 V, ID=600mA, TJ= 125qC
0.25
0.37
0.73
0.35
0.70
0.85
1.25
1.00 :gFS Forward Transconductance VDS = 5 V, ID = 600 mA 1.8 S
Dynamic Characteristics
Ciss Input Capacitance 60 pF
Coss Output Capacitance 20 pF
Crss Reverse Transfer Capacitance
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
10 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 8 16 ns
td(off) Turn–Off Delay Time 8 16 ns
tf Turn–Off Fall Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 : 2.4 4.8 ns
Qg Total Gate Charge 0.8 1.1 nC
Qgs Gate–Source Charge 0.16 nC
Qgd Gate–Drain Charge
VDS = 10 V, ID = 600 mA,
VGS = 4.5 V
0.26 nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 150 mA (Note 2) 0.7 1.2 V
trr Diode Reverse Recovery Time 8 nS
Qrr Diode Reverse Recovery Charge
IF = 600 mA,
dIF/dt = 100 A/µs 1 nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design
a) 200°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.Pulse Test: Pulse Width < 300Ps,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET