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email any questions regarding the system integration to Fairchild_questions@onsemi.com.
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0
October 2016
FOD410, FOD4108, FOD4116, FOD4118
6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Features
• 300 mA On-State Current
• Zero-Voltage Crossing
• High Blocking Voltage
– 600 V (FOD410, FOD4116)
– 800 V (FOD4108, FOD4118)
• High Trigger Sensitivity
– 1.3 mA (FOD4116, FOD4118)
– 2 mA (FOD410, FOD4108)
• High Static dv/dt (10,000 V/μs)
• Safety and Regulatory Approvals:
– UL1577, 5,000 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5
Applications
• Solid-State Relays
• Industrial Controls
• Lighting Controls
• Static Power Switches
• AC Motor Starters
Description
The FOD410, FOD4108, FOD4116 and FOD4118
devices consist of an infrared emitting diode coupled to a
hybrid triac formed with two inverse parallel SCRs which
form the triac function capable of driving discrete triacs.
The FOD4116 and FOD4118 utilize a high efficiency
infrared emitting diode which offers an improved trigger
sensitivity. These devices are housed in a standard 6-pin
dual in-line (DIP) package.
Functional Schematic Package Outlines
6
1
6
6
1
*DO NOT CONNECT
(TRIAC SUBSTRATE)
1
Figure 2. Package Outlines
Figure 1. Schematic
MAIN TERM.
NC*
N/C
1
2
3
ANODE
CATHODE
4
5
6MAIN TERM.
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 2
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over-Voltage 6000 Vpeak
External Creepage 7mm
External Clearance 7mm
DTI Distance Through Insulation (Insulation Thickness) 0.4 mm
TSCase Temperature(1) 175 °C
IS,INPUT Input Current(1) 400 mA
PS,OUTPUT Output Power(1) 700 mW
RIO Insulation Resistance at TS, VIO = 500 V(1) > 109
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 3
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol Parameter Device Value Unit
TSTG Storage Temperature All -55 to +150 °C
TOPR Operating Temperature All -55 to +100 °C
TJJunction Temperature All -55 to +125 °C
TSOL Lead Solder Temperature All 260 for 10 sec °C
PD(TOTAL)
Total Device Power Dissipation @ 25°C All 500 mW
Derate Above 25°C All 6.6 mW/°C
EMITTER
IFContinuous Forward Current All 30 mA
VRReverse Voltage All 6 V
PD(EMITTER)
Total Power Dissipation 25°C Ambient All 50 mW
Derate Above 25°C All 0.71 mW/°C
DETECTOR
VDRM Off-State Output Terminal Voltage FOD410, FOD4116 600 V
FOD4108, FOD4118 800
ITSM
Peak Non-Repetitive Surge Current
(single cycle 60 Hz sine wave) All 3 A
ITM Peak On-State Current All 300 mA
PD(DETECTOR)
Total Power Dissipation @ 25°C Ambient All 450 mW
Derate Above 25°C All 5.9 mW/°C
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 4
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristic s
Notes:
2. Test voltage must be applied within dv/dt rating.
3. This is static dv/dt. See Figure 16 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
Symbol Parameter Test Cond itions Device Min. Typ. Max. Unit
EMITTER
VFInput Forward Voltage IF = 20 mA All 1.25 1.50 V
IRReverse Leakage Current VR = 6 V All 0.0001 10 μA
DETECTOR
ID(RMS)
Peak Blocking Current Either
Direction
IF = 0,
TA = 100°C(2)
VD = 600 V FOD410,
FOD4116 3100μA
VD = 800 V FOD4108,
FOD4118
IR(RMS) Reverse Current TA = 100°C
VD = 600 V FOD410,
FOD4116 3100μA
VD = 800 V FOD4108,
FOD4118
dv/dt Critical Rate of Rise of
Off-State Voltage
IF = 0 A(3)
(Figure 16) VD = VDRM All 10,000 V/μs
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 5
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Transfer Characteristics
Note:
4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT
.Therefore, recommended operating
IF lies between max IFT (2 mA for FOD410 and FOD4108 and 1.3 mA for FOD4116 and FOD4118) and the absolute
max IF (30 mA).
Zero Crossing Characteristics
Isolation Characteristics
Note:
5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common,
and pins 4, 5 and 6 are common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second
duration.
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
IFT LED Trigger Current Main Terminal Voltage = 5 V(4)
FOD410,
FOD4108 0.65 2.0
mA
FOD4116,
FOD4118 0.65 1.3
VTM
Peak On-State Voltage,
Either Direction ITM = 300 mA peak, IF = Rated IFT All 2.2 3 V
IH
Holding Current, Either
Direction VT = 3 V All 200 500 µA
IL Latching Current VT = 2.2 V All 5 mA
tON Turn-On Time
PF = 1.0,
IT = 300 mA
VRM = VDM = 424 VAC
FOD410,
FOD4116,
FOD4118 60 µs
VRM = VDM = 565 VAC FOD4108
tOFF Turn-Off Time VRM = VDM = 424 VAC
FOD410,
FOD4116,
FOD4118 52 µs
VRM = VDM = 565 VAC FOD4108
dv/dtC
Critical Rate of Rise of
Voltage at Current Com-
mutation
VD = 230 VRMS,
ID = 300 mAPK
All 10 V/µs
di/dtC
Critical Rate of Rise of
On-State Current Com-
mutation
VD = 230 VRMS,
ID = 300 mAPK
All 9 A/ms
dv(IO)/dt
Critical Rate of
Rise of Coupled
Input/Output Voltage
IT = 0 A, VRM = VDM = 424 VAC All 10,000 V/µs
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
VINH
Inhibit Voltage
(MT1-MT2 Voltage
above which device
will not trigger)
IF = Rated IFT All 8 25 V
IDRM2 Leakage in Inhibit State IF = Rated IFT
, Rated VDRM, Off-State All 20 200 µA
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
VISO Steady State Isolation
Voltage f = 60 Hz, t = 1 Minute(5) All 5,000 VACRMS
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 6
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Typical Application
Figure 3 shows a typical circuit for when hot line switch-ing is required. In this circuit the “hot” side of the line is
switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or
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Figure 3. Hot-Line Switching Application Circuit
0.01μF
VCC
Rin 1
2
3
6
5
4240 VAC
HOT
FKPF12N80
NEUTRAL
360 Ω
* For highly inductive loads (power factor < 0.5), change this value to 360 ohms.
330 Ω
FOD40
FOD408
FOD416
FOD418 39Ω
LOAD
Figure . Inverse-Parallel SCR Driver Circuit
VCC
Rin
1
2
3
6
5
4
240 VAC
SCR
360 Ω
R1 D1
SCR
R2 D2
LOAD
FOD40
FOD408
FOD416
FOD418
Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors,
R1 and R2, are optional 330 Ω.
Note: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device
only.
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 7
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Typical Performance Characteristics
-40-60 80 100
0.6
0.8
1.0
1.2
1.4
1.6
VAK
= 5.0 V
Normalized to TA = 25°C
110
IF – FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
0.1 100
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure . Forward Voltage
(V
F
) vs. Forward Current (I
F
)
Figure . Peak LED Current
vs. Duty Factor, Tau
-20 0 20 40 60
TA – AMBIENT TEMPERATURE (°C)
IFT – NORMALIZED LED TRIGGER CURRENT
Figure . Normalized LED Trigger Current
(I
FT
) vs. Ambient Temperature (T
A
)
-55°C
25°C
85°C
1 100
1
10
100
10-6 10-5 10-4 10-3 10-2 10-1 100101
10000
1000
100
10
2000 800 1000
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0034
1
10
100
1000
t – LED PULSE DURATION (s)
If(pk) – PEAK LED CURRENT (mA)
Figure . Pulse Trigger Current
400 600
PW – PULSE WIDTH (μs)
IFTH(PW)/IFTH(DC) – NORMALIZED IFTH
Figure . On-State Voltage
(V
TM
) vs. On-State Current (I
TM
)
012
VTM – ON-STATE VOLTAGE (V)
ITM – ON-STATE CURRENT (mA)
10
IFT/IF – NORMALIZED IF (mA)
Figure . Trigger Delay Time
tD – DELAY TIME (μs)
0.5
0.2
0.1
0.05
0.02
0.01
0.005
FactorDuty
t
DF =
τ
τ
t
tD = t(IF/IFT 25°C)
VD = 400 VP-P
F = 60 Hz
VL = 250 VP-P
60 HzF =
Normalized to DC
TA = 100°C TA = 25°C
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 8
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Typical Performance Characteristics (Continued)
-60 -40 -20 0 20 40 60 80 100
0.1
1
10
-40-60 80 100
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-60 -40 -20 0 20 40 60 80 100
50
100
150
200
250
300
350
Figure 1. Normalized Holding Current
(IH) vs. Ambient Temperature (TA)
-20 0 20 40 60
T
A
– AMBIENT TEMPERATURE (°C)
I
H
– NORMALIZED HOLDING CURRENT
T
A
– AMBIENT TEMPERATURE (°C)
Figure 1. Current Reduction
I
TP
– PEAK ON-STATE CURRENT (mA)
Normalized to TA = 25°C
ITP = f(TA)
T
A
– AMBIENT TEMPERATURE (°C)
Figure 1. Normalized Off-State Current (I
DRM
)
vs. Ambient Temperature (T
A
)
I
DRM
– NORMALIZED OFF-STATE CURRENT
-60-40-20020406080
T
A
– AMBIENT TEMPERATURE (°C)
Figure . Normalized Inhibit Voltage (VINH)
vs. Ambient Temperature (TA)
-60 -40 -20 0 20 40 60 80 100
2.5
2.0
1.5
1.0
0.5
0.0
T
A
– AMBIENT TEMPERATURE (°C)
Figure 1. Normalized Leakage in Inhibit State
(IDRM2) vs. Ambient Temperature (TA)
I
DRM2
(NORM) = I
DRM2
(T
A
) / I
DRM2
(25°C)
IF = Rated IFT
VDRM = 600 V
Normalized to TA = 25°C
VD = 800 V, IBD (μA)
Normalized to TA = 25°C
100
1.2
1.1
1.0
0.9
0.8
V
INH
(NORM) = V
INH
(T
A
) / V
INH
(25°C)
IF = Rated IFT
Normalized to TA = 25°C
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 9
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
27ȍ
2 W
2W
100ȍ
2 W
dY
dt
VERNIER
MOUNT DUT ON
TEMPERATURE CONTROLLED
Cu PLATE
DIFFERENTIAL
PREAMP
f = 10 Hz
PW = 100 μs
50 PULSE
GENERATOR
ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN
82ȍ
2 W
470 pF
0.001Q)
0.005Q)
0.01Q)
0.047Q)
0.47Q)
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1N914
20 V
1Nȍ 1/4 W
1N967A
18 V
RFP4N100
DUT 20kȍ
X100 PROBE
X100 PROBE
VDRM/VRRM SELECT
6
4
1
2
1000ȍ
10 W
WIREWOUND
0.33X) 1000 V
POWER
1 0ȍ2W EACH
1.2 0ȍ
2 W
TEST
0-1000 V
10 mA
0.047Q)
1000 V
Figure . Circuit for StaticdY Measurement of Power Thyristors
dt
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 10
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Reflow Profile
Figure 1. Reflow Profile
• Peak reflow temperature: 26°C (package surface temperature)
• Time of temperature higher than 18°C for 160 seconds or less
• One time soldering reflow is recommendeG
245 °C, 10 to 30 seconds
Time (Minute)
0
300
250
200
150
100
50
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Temperature (°C)
Time above 183°C, < 160 seconds
Ramp up = 2 to 10
°C/second
260°C peak
©2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 11
FOD410, FOD4108, FOD4116, FOD4118 — 6-Pin DIP High dv/dt Zero-Cross Triac Drivers
Ordering Information
Note:
6. The product orderable part number system listed in this table also applies to the FOD4108, FOD4116, and FOD4118
product families.
Marking Information
Figure 18. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
FOD410 DIP 6-Pin Tube (50 Units)
FOD410S SMT 6-Pin (Lead Bend) Tube (50 Units)
FOD410SD SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
FOD410V DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
FOD410SV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
FOD410SDV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
FOD410TV DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 VDE mark. DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “6”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
1
2
6
43 5
V
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;

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www.onsemi.com
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