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FOD410, FOD4108, FOD4116, FOD4118 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Features Description * 300 mA On-State Current * Zero-Voltage Crossing * High Blocking Voltage - 600 V (FOD410, FOD4116) - 800 V (FOD4108, FOD4118) * High Trigger Sensitivity - 1.3 mA (FOD4116, FOD4118) - 2 mA (FOD410, FOD4108) * High Static dv/dt (10,000 V/s) * Safety and Regulatory Approvals: - UL1577, 5,000 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5 The FOD410, FOD4108, FOD4116 and FOD4118 devices consist of an infrared emitting diode coupled to a hybrid triac formed with two inverse parallel SCRs which form the triac function capable of driving discrete triacs. The FOD4116 and FOD4118 utilize a high efficiency infrared emitting diode which offers an improved trigger sensitivity. These devices are housed in a standard 6-pin dual in-line (DIP) package. Applications * * * * * Solid-State Relays Industrial Controls Lighting Controls Static Power Switches AC Motor Starters Functional Schematic ANODE 1 Package Outlines 6 MAIN TERM. 6 6 1 CATHODE 2 1 5 NC* N/C 3 4 MAIN TERM. 6 1 Figure 2. Package Outlines *DO NOT CONNECT (TRIAC SUBSTRATE) Figure 1. Schematic (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers October 2016 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics < 150 VRMS Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage I-IV I-IV < 300 VRMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol VPR 175 Parameter Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm DTI Distance Through Insulation (Insulation Thickness) 0.4 mm TS Case Temperature(1) 175 C IS,INPUT PS,OUTPUT RIO Input Current (1) Output Power(1) Insulation Resistance at TS, VIO = 500 V(1) 400 mA 700 mW > 109 Note: 1. Safety limit values - maximum values allowed in the event of a failure. (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 2 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified. Symbol Device Parameter Value Unit TSTG Storage Temperature All -55 to +150 C TOPR Operating Temperature All -55 to +100 C Junction Temperature All -55 to +125 C Lead Solder Temperature All 260 for 10 sec C Total Device Power Dissipation @ 25C All 500 mW Derate Above 25C All 6.6 mW/C IF Continuous Forward Current All 30 mA VR Reverse Voltage All 6 V Total Power Dissipation 25C Ambient All 50 mW Derate Above 25C All 0.71 mW/C FOD410, FOD4116 600 FOD4108, FOD4118 800 TJ TSOL PD(TOTAL) EMITTER PD(EMITTER) DETECTOR VDRM Off-State Output Terminal Voltage ITSM Peak Non-Repetitive Surge Current (single cycle 60 Hz sine wave) All 3 A ITM Peak On-State Current All 300 mA Total Power Dissipation @ 25C Ambient All 450 mW Derate Above 25C All 5.9 mW/C PD(DETECTOR) (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 V www.fairchildsemi.com 3 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Absolute Maximum Ratings TA = 25C unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 20 mA All 1.25 1.50 V IR Reverse Leakage Current VR = 6 V All 0.0001 10 A 3 100 A 3 100 A DETECTOR ID(RMS) IR(RMS) dv/dt Peak Blocking Current Either IF = 0, Direction TA = 100C(2) Reverse Current Critical Rate of Rise of Off-State Voltage VD = 600 V FOD410, FOD4116 VD = 800 V FOD4108, FOD4118 VD = 600 V FOD410, FOD4116 VD = 800 V FOD4108, FOD4118 VD = VDRM All TA = 100C IF = 0 A(3) (Figure 16) 10,000 V/s Notes: 2. Test voltage must be applied within dv/dt rating. 3. This is static dv/dt. See Figure 16 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 4 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Electrical Characteristics TA = 25C unless otherwise specified. Transfer Characteristics Symbol IFT Parameter LED Trigger Current Test Conditions Main Terminal Voltage = 5 V(4) Device Min. Typ. Max. FOD410, FOD4108 0.65 2.0 FOD4116, FOD4118 0.65 1.3 Unit mA VTM Peak On-State Voltage, Either Direction ITM = 300 mA peak, IF = Rated IFT All 2.2 3 V IH Holding Current, Either Direction VT = 3 V All 200 500 A IL Latching Current VT = 2.2 V All 5 mA VRM = VDM = 424 VAC FOD410, FOD4116, FOD4118 60 s VRM = VDM = 565 VAC FOD4108 VRM = VDM = 424 VAC FOD410, FOD4116, FOD4118 52 s VRM = VDM = 565 VAC FOD4108 tON Turn-On Time PF = 1.0, IT = 300 mA tOFF Turn-Off Time dv/dtC Critical Rate of Rise of V = 230 VRMS, Voltage at Current Com- D ID = 300 mAPK mutation All 10 V/s di/dtC Critical Rate of Rise of On-State Current Commutation VD = 230 VRMS, ID = 300 mAPK All 9 A/ms Critical Rate of Rise of Coupled Input/Output Voltage IT = 0 A, VRM = VDM = 424 VAC All dv(IO)/dt 10,000 V/s Note: 4. All devices are guaranteed to trigger at an IF value less than or equal to max IFT.Therefore, recommended operating IF lies between max IFT (2 mA for FOD410 and FOD4108 and 1.3 mA for FOD4116 and FOD4118) and the absolute max IF (30 mA). Zero Crossing Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit Inhibit Voltage VINH (MT1-MT2 Voltage IF = Rated IFT above which device All 8 25 V All 20 200 A Typ. Max. Unit will not trigger) IDRM2 Leakage in Inhibit State IF = Rated IFT, Rated VDRM, Off-State Isolation Characteristics Symbol Parameter VISO Steady State Isolation Voltage Test Conditions Device f = 60 Hz, t = 1 Minute(5) All Min. 5,000 VACRMS Note: 5. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1, 2 and 3 are common, and pins 4, 5 and 6 are common. 5,000 VACRMS for 1 minute duration is equivalent to 6,000 VACRMS for 1 second duration. (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 5 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Electrical Characteristics (Continued) Figure 3 shows a typical circuit for when hot line switch-ing is required. In this circuit the "hot" side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or KRWOLQH 5LQLVFDOFXODWHGVRWKDW,)LVHTXDOWRWKHUDWHG,)7RIWKHSDUWP$IRU)2'DQG)2'P$IRU )2'DQG)2'7KHUHVLVWRUDQG)FDSDFLWRUDUHIRUVQXEELQJRIWKHWULDFDQGPD\RUPD\ QRWEHQHFHVVDU\GHSHQGLQJXSRQWKHSDUWLFXODUWULDFDQGORDGXVH Rin 1 6 360 HOT VCC FOD40 FOD408 FOD416 FOD418 2 3 5 FKPF12N80 39 4 240 VAC 0.01F 330 LOAD NEUTRAL * For highly inductive loads (power factor < 0.5), change this value to 360 ohms. Figure 3. Hot-Line Switching Application Circuit 240 VAC R1 1 VCC Rin 2 D1 6 FOD40 FOD408 FOD416 FOD418 3 SCR 5 4 SCR 360 R2 D2 LOAD Figure . Inverse-Parallel SCR Driver Circuit Suggested method of firing two, back-to-back SCR's with a Fairchild triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 . Note: This optoisolator should not be used to drive a load directly. It is intended to be a discrete triac driver device only. (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 6 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Typical Application 1.6 1.4 -55C 1.2 25C 85C 1.0 0.8 0.6 0.1 1.6 IFT - NORMALIZED LED TRIGGER CURRENT VF - FORWARD VOLTAGE (V) 1.8 1 10 IF - FORWARD CURRENT (mA) VAK = 5.0 V Normalized to TA = 25C 1.4 1.2 1.0 0.8 0.6 -60 100 Figure . Forward Voltage (VF) vs. Forward Current (IF) -20 0 20 40 60 TA - AMBIENT TEMPERATURE (C) 100 100 tD = t(IF/IFT 25C) VD = 400 VP-P F = 60 Hz 0.005 0.01 1000 0.02 DF = 0.05 tD - DELAY TIME (s) Duty Factor t t 0.1 0.2 0.5 100 10 10-6 10-5 10-4 10-3 10-2 10-1 t - LED PULSE DURATION (s) 100 10 1 101 1 10 IFT/IF - NORMALIZED IF (mA) 100 Figure . Trigger Delay Time Figure . Peak LED Current vs. Duty Factor, Tau 1000 1.7 VL = 250 VP-P F = 60 Hz Normalized to DC 1.6 ITM - ON-STATE CURRENT (mA) IFTH(PW)/IFTH(DC) - NORMALIZED IFTH 80 Figure . Normalized LED Trigger Current (IFT) vs. Ambient Temperature (TA) 10000 If(pk) - PEAK LED CURRENT (mA) -40 1.5 1.4 1.3 1.2 1.1 100 TA = 100C 10 TA = 25C 1.0 0.9 0 200 400 600 PW - PULSE WIDTH (s) 800 1 1000 1 2 3 4 VTM - ON-STATE VOLTAGE (V) Figure . On-State Voltage (VTM) vs. On-State Current (ITM) Figure . Pulse Trigger Current (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 0 www.fairchildsemi.com 7 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Typical Performance Characteristics IDRM - NORMALIZED OFF-STATE CURRENT IH - NORMALIZED HOLDING CURRENT 2.2 Normalized to TA = 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -60 -40 -20 0 20 40 60 80 100 10 VD = 800 V, IBD (A) Normalized to TA = 25C 1 0.1 -60 -40 -20 TA - AMBIENT TEMPERATURE (C) 40 60 80 100 2.5 IDRM2 (NORM) = IDRM2 (TA) / IDRM2 (25C) 1.2 VINH (NORM) = VINH (TA) / VINH (25C) 20 Figure 1. Normalized Off-State Current (IDRM) vs. Ambient Temperature (TA) Figure 1. Normalized Holding Current (IH) vs. Ambient Temperature (TA) IF = Rated IFT Normalized to TA = 25C 1.1 1.0 0.9 0.8 -60 0 TA - AMBIENT TEMPERATURE (C) -40 -20 0 20 40 60 80 IF = Rated IFT VDRM = 600 V Normalized to TA = 25C 2.0 1.5 1.0 0.5 0.0 -60 100 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) TA - AMBIENT TEMPERATURE (C) Figure . Normalized Inhibit Voltage (VINH) vs. Ambient Temperature (TA) Figure 1. Normalized Leakage in Inhibit State (IDRM2) vs. Ambient Temperature (TA) ITP - PEAK ON-STATE CURRENT (mA) 350 ITP = f(TA) 300 250 200 150 100 50 -60 -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Figure 1. Current Reduction (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 8 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Typical Performance Characteristics (Continued) DIFFERENTIAL PREAMP 1000 2W 10 W WIREWOUND 6 X100 PROBE 1 DUT 2 X100 PROBE 2W 20k 0.33X) 0.047Q) 1000 V 1000 V 4 470 pF 1 02W EACH dY dt VERNIER MOUNT DUT ON TEMPERATURE CONTROLLED Cu PLATE 100 2W 0.001Q) 0.005Q) 82 2W 1.2 0 0.01Q) 2W POWER 0.047Q) 1N914 20 V 0.1Q) RFP4N100 0.47Q) 56 2W f = 10 Hz PW = 100 s 50 PULSE GENERATOR TEST 1N 1/4 W 0-1000 V 10 mA 1N967A 18 V ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN dY Figure . Circuit for Static Measurement of Power Thyristors dt (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 9 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers VDRM/VRRM SELECT 27 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Reflow Profile 245 C, 10 to 30 seconds Temperature (C) 300 260C peak 250 200 150 Time above 183C, < 160 seconds 100 50 Ramp up = 2 to 10C/second 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) * Peak reflow temperature: 26C (package surface temperature) * Time of temperature higher than 18C for 160 seconds or less * One time soldering reflow is recommendeG Figure 1. Reflow Profile (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 10 Part Number FOD410 Package Packing Method DIP 6-Pin Tube (50 Units) FOD410S SMT 6-Pin (Lead Bend) Tube (50 Units) FOD410SD SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) FOD410SV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) FOD410SDV SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) FOD410V FOD410TV Note: 6. The product orderable part number system listed in this table also applies to the FOD4108, FOD4116, and FOD4118 product families. Marking Information 1 V 3 )2' 2 ; <<' 6 5 4 Figure 18. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 VDE mark. DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., "6" 5 Digit Work Week, Ranging from "01" to "53" 6 Assembly Package Code (c)2004 Fairchild Semiconductor Corporation FOD410, FOD4108, FOD4116, FOD4118 Rev. 1.7.0 www.fairchildsemi.com 11 FOD410, FOD4108, FOD4116, FOD4118 -- 6-Pin DIP High dv/dt Zero-Cross Triac Drivers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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