IRF6218STRRHR - INTERNATIONAL RECTIFIER

www.irf.com 1

09/30/04

IRF6218S

IRF6218L

SMPS MOSFET

HEXFET® Power MOSFET

Notes  through  are on page 9

PD - 95863A

lReset Switch for Active Clamp

Reset DC-DC converters

Benefits

Applications

lLow Gate to Drain Charge to Reduce

Switching Losses

lFully Characterized Capacitance Including

Effective COSS to Simplify Design (See

App. Note AN1001)

lFully Characterized Avalanche Voltage

and Current

VDSS RDS(on) max ID

-150V 150m

@VGS = -10V -27A

D2Pak

IRF6218S

TO-262

IRF6218L

Absolute Maximum Ratin

Parameter Units

VDS Drain-to-Source Voltage V

VGS Gate-to-Source Voltage

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

IDM Pulsed Drain Current

PD @TC = 25°C Maximum Power Dissipation W

Linear Derating Factor W/°C

dv/dt Peak Diode Recovery dv/dt

V/ns

TJ Operating Junction and °C

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

RθJC Junction-to-Case

––– 0.61 °C/W

RθJA Junction-to-Ambient (PCB Mounted, steady state)

––– 40

1.6

250

Max.

-27

-19

-110

-150

± 20

300 (1.6mm from case )

8.2

-55 to + 175

IRF6218S/L

2www.irf.com

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V

∆V(BR)DSS

∆TJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C

RDS(on) Static Drain-to-Source On-Resistance ––– 120 150 mΩ

VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V

IDSS Drain-to-Source Leakage Current ––– ––– -25 µA

––– ––– -250

IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA

Gate-to-Source Reverse Leakage ––– ––– 100

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

gfs Forward Transconductance 11 ––– ––– S

QgTotal Gate Charge ––– 71 110

Qgs Gate-to-Source Charge ––– 21 ––– nC

Qgd Gate-to-Drain ("Miller") Charge ––– 32 –––

td(on) Turn-On Delay Time ––– 21 –––

trRise Time –––70–––ns

td(off) Turn-Off Delay Time ––– 35 –––

tfFall Time –––30–––

Ciss Input Capacitance ––– 2210 –––

Coss Output Capacitance ––– 370 –––

Crss Reverse Transfer Capacitance ––– 89 ––– pF

Coss Output Capacitance ––– 2220 –––

Coss Output Capacitance ––– 170 –––

Coss eff. Effective Output Capacitance ––– 340 –––

Avalanche Characteristics

Parameter Units

EAS Sin

le Pulse Avalanche Ener

IAR Avalanche Current

c

Diode Characteristics

Parameter Min. Typ. Max. Units

ISContinuous Source Current ––– ––– -27

(Body Diode) A

ISM Pulsed Source Current ––– ––– -110

(Body Diode)

c

VSD Diode Forward Voltage ––– ––– -1.6 V

trr Reverse Recovery Time ––– 150 ––– ns

Qrr Reverse Recovery Charge ––– 860 ––– nC

Typ.

–––

Conditions

VDS = -50V, ID = -16A

ID = -16A

VDS = -120V

Conditions

VGS = -10V

VGS = 0V

VDS = -25V

ƒ = 1.0MHz

210

-16

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25°C, IS = -16A, VGS = 0V

TJ = 25°C, IF = -16A, VDD = -25V

di/dt = -100A/µs

Conditions

VGS = 0V, ID = -250µA

Reference to 25°C, ID = -1mA

VGS = -10V, ID = -16A

VDS = VGS, ID = -250µA

VDS = -120V, VGS = 0V

VDS = -120V, VGS = 0V, TJ = 150°C

VGS = -20V

VGS = 20V

Max.

VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = -120V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to -120V

VGS = -10V

VDD = -75V

ID = -16A

RG = 3.9Ω

IRF6218S/L

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature

2 4 6 8 10 12

-VGS, Gate-to-Source Voltage (V)

1.0

100

-ID, Drain-to-Source Current (Α)

TJ = 25°C TJ = 175°C

VDS = 50V

≤60µs PULSE WIDTH

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = -27A

VGS = -10V

0.1 110 100

-V DS, Drain-to-Source Voltage (V)

0.01

0.1

100

1000

-ID, Drain-to-Source Current (A)

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM -4.5V

≤60µs PULSE WIDTH

Tj = 25°C

-4.5V

0.1 110 100

-V DS, Drain-to-Source Voltage (V)

0.1

100

1000

-ID, Drain-to-Source Current (A)

-4.5V

≤60µs PULSE WIDTH

Tj = 175°C

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM -4.5V

IRF6218S/L

4www.irf.com

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

110 100

-VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance(pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-VSD, Source-to-Drain Voltage (V)

0.10

1.00

10.00

100.00

1000.00

-ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100 1000

-VDS, Drain-to-Source Voltage (V)

100

1000

-ID, Drain-to-Source Current (A)

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

Tc = 25°C

Tj = 175°C

Single Pulse

0 1020304050607080

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

-VGS, Gate-to-Source Voltage (V)

VDS= 120V

VDS= 75V

VDS= 30V

ID= -16A

IRF6218S/L

www.irf.com 5

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

d(on)

d(off)

Fig 10b. Switching Time Waveforms

Fig 9. Maximum Drain Current vs.

Ambient Temperature

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

D.U.T.

25 50 75 100 125 150 175

TC , Case Temperature (°C)

-ID, Drain Current (A)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.264 0.000285

0.206 0.001867

0.140 0.013518

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

τC

Ci i/Ri

Ci= τi/Ri

IRF6218S/L

6www.irf.com

Fig 13. On-Resistance vs. Gate Voltage

Fig 12. On-Resistance vs. Drain Current

Fig 14a&b. Basic Gate Charge Test Circuit

and Waveform

Fig 15a&b. Unclamped Inductive Test circuit

and Waveforms

Fig 15c. Maximum Avalanche Energy

vs. Drain Current

D.U.T. V

-3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

-VGS

Charge

0.01

Ω

D.U.T

DRIVER

15V

-20V

(

)

DSS

0 20406080

-ID , Drain Current (A)

100

150

200

250

300

350

400

RDS (on) , Drain-to-Source On Resistance (mΩ)

VGS = -10V

4 5 6 7 8 9 10 11 12

-VGS, Gate -to -Source Voltage (V)

100

200

300

400

500

600

700

800

900

1000

RDS(on), Drain-to -Source On Resistance (mΩ)

ID = -27A

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

200

300

400

500

600

700

800

900

EAS , Single Pulse Avalanche Energy (mJ)

TOP -4.6A

-6.3A

BOTTOM -16A

IRF6218S/L

www.irf.com 7

D2Pak Part Marking Information

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D2Pak Package Outline

Dimensions are shown in millimeters (inches)

IRF6218S/L

8www.irf.com

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

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IGBT

1- GATE

2- COLLECTOR

3- EMITTER

IRF6218S/L

www.irf.com 9

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Starting TJ = 25°C, L = 1.6mH, RG = 25Ω, IAS = -17A.

 ISD ≤ -17A, di/dt ≤ -520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Rq is measured at TJ of approximately 90°C.

 When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques

refer to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.4/04

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330. 00

(14.173)

MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/