AON6932A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary * Latest Trench Power AlphaMOS (MOS LV) technology * Very Low RDS(on) at 4.5VGS * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Q1 30V Q2 30V ID (at VGS=10V) 28A 42A RDS(ON) (at VGS=10V) <5m <2.5m RDS(ON) (at VGS = 4.5V) <8.5m <3.2m VDS 100% UIS Tested Application 100% Rg Tested * DC/DC Converters in Computing, Servers, and POL * Isolated DC/DC Converters in Telecom and Industrial DFN5X6B Top View Bottom View PIN1 PIN1 Bottom View Bottom View Top View Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Max Q1 Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain CurrentG ID TC=100C Pulsed Drain Current C TA=25C Continuous Drain Current Avalanche Current IDM Max Q2 Units V 20 20 V 28 42 22 33 112 168 22 36 17 29 IDSM TA=70C C 30 A A IAS 32 70 A Avalanche Energy L=0.05mH C EAS 26 123 mJ VDS Spike VSPIKE V 100ns TC=25C Power Dissipation B Power Dissipation PDSM TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0 : Nov. 2012 36 78 12 31 3.6 4.3 2.3 2.7 PD TC=100C TA=25C A 36 31 TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJC -55 to 150 Typ Q1 29 56 3.3 www.aosmd.com Typ Q2 24 50 1.2 Max Q1 Max Q2 35 29 67 60 4 1.6 W W C Units C/W C/W C/W Page 1 of 10 AON6932A Q1 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A RDS(ON) Static Drain-Source On-Resistance 5 1.4 VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=15V, ID=20A 0.7 Units V 1 TJ=55C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 1.8 A 100 nA 2.2 V 4.1 5 5.6 6.8 6.7 8.5 m 1 V 28 A 91 0.7 m S 1037 pF 441 pF 61 pF 1.5 2.3 15.5 22 nC 6.8 10 nC 3.0 nC Gate Drain Charge 3.6 nC tD(on) Turn-On DelayTime 5.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 3.3 ns 18 ns 4.3 ns IF=20A, dI/dt=500A/s 12.7 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 17.2 ns nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on RJA 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Nov. 2012 www.aosmd.com Page 2 of 10 AON6932A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4.5V 80 80 7V 5V 4V 60 ID(A) ID (A) 60 125C 40 40 20 25C 20 VGS=3.0V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.8 VGS=4.5V 8 VGS=4.5V RDS(ON) (m) 1 6 4 VVGS =10V GS=10V 2 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 15 ID=20A ID=11.5A 1.0E+01 1.0E+00 125C IS (A) RDS(ON) (m) 10 125C 125C 1.0E-01 1.0E-02 25C 5 1.0E-03 1.0E-04 25C 25C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Nov. 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 10 AON6932A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 VDS=15V ID=20A 1200 Ciss Capacitance (pF) VGS (Volts) 8 6 4 1000 800 600 Coss 400 2 200 0 Crss 0 0 5 10 15 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 200 100.0 160 10.0 100us 1.0 1ms 100ms 20 25 30 TJ(Max)=150C TC=25C DC 120 80 40 TJ(Max)=150C TC=25C 0.1 1 10 0 0.0001 100 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 15 10s Power (W) ID (Amps) RDS(ON) limited 0.0 0.01 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 0.1 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=4C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Nov. 2012 www.aosmd.com Page 4 of 10 AON6932A Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 Current rating ID(A) Power Dissipation (W) 40 30 20 10 30 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) ZJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 40 RJA=67C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Nov. 2012 www.aosmd.com Page 5 of 10 AON6932A Q2 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A RDS(ON) Static Drain-Source On-Resistance 5 1.1 VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 1.5 VGS=10V, VDS=15V, ID=20A 0.3 A 100 nA 1.9 V 1.8 2.5 2.3 3.2 2.4 3.2 m 1 V 42 A 85 0.7 m S 3430 VGS=0V, VDS=15V, f=1MHz Units V 1 TJ=55C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1327 pF 175 pF 0.7 1.1 53 64 nC 25 30 nC 7.8 nC Qgd Gate Drain Charge 10.3 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 5.0 ns 33.8 ns tf Turn-Off Fall Time 9.8 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/s 22 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 58 ns nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on RJA 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Nov. 2012 www.aosmd.com Page 6 of 10 AON6932A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 60 80 60 ID(A) ID (A) 4.5V 3V 125C 40 40 25C 20 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 1.6 3 VGS=4.5V V =4.5V 2 VGS=10V Normalized On-Resistance RDS(ON) (m) 1 GS VGS=10V 1 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+02 ID=20A I =20A D 1.0E+01 4 IS (A) RDS(ON) (m) 1.0E+00 125C 125C 3 2 125C 1.0E-01 1.0E-02 25C 1.0E-03 25C 25C 1 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Nov. 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 7 of 10 AON6932A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=15V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 2 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 50 60 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 300 1000.0 RDS(ON) limited 10s 10.0 100s DC 1ms 10ms 1.0 TJ(Max)=150C TC=25C 0.1 0.0 0.01 0.1 1 TJ(Max)=150C TC=25C 250 10s Power (W) ID (Amps) 100.0 30 200 17 5 2 10 150 100 50 10 100 0 0.0001 VDS (Volts) 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 40 RJC=1.6C/W PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : Nov. 2012 www.aosmd.com Page 8 of 10 AON6932A Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 Current rating ID(A) Power Dissipation (W) 50 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) TCASE (C) Figure 12: Power De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) ZJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 40 RJA=60C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Nov. 2012 www.aosmd.com Page 9 of 10 AON6932A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0 : Nov. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 10 of 10