AON6932A
30V Dual Asymmetric N-Channel AlphaMOS
General Description Product Summary
Q1
Q2
30V 30V
I
D
(at V
GS
=10V) 28A 42A
R
DS(ON)
(at V
GS
=10V) <5mΩ <2.5mΩ
R
DS(ON)
(at V
GS
= 4.5V) <8.5mΩ <3.2mΩ
100% UIS Tested
Application 100% Rg Tested
Symbol
V
DS
V
±20
±2
0
30
Max Q2 Units
V
V
Parameter
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
V
DS
Max Q1
Top View Bottom View
PIN1
DFN5X6B
Top View Bottom View
Bottom View
PIN1
V
GS
I
DM
I
AS
E
AS
V
DS
Spike V
SPIKE
T
J
, T
STG
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2
t ≤ 10s
29 24 35 29
Steady-State
56 50 67 60
Steady-State
R
θJC
3.3 1.2 4 1.6
Thermal Characteristics
3.6 4.3
2.3 2.7
Junction and Storage Temperature Range -55 to 150
W
T
A
=70°C
36
28 42
22
112
°C
W
22
29
78
33
±20
±2
0
A
168
Units
70
26 123
A
31
V
12
mJ
Avalanche Current
C
Continuous Drain
Current
A
31
T
C
=100°C
Pulsed Drain Current
C
Continuous Drain
Current
G
I
D
32
17
T
C
=25°C
T
C
=100°C
Power Dissipation
A
P
DSM
T
A
=25°C
T
A
=25°C
Power Dissipation
B
I
DSM
T
A
=70°C
P
D
°C/W
°C/W
Maximum Junction-to-Ambient
A D
R
θJA
Maximum Junction-to-Ambient
A
°C/W
Maximum Junction-to-Case
V 100ns
Avalanche Energy L=0.05mH
C
36 36
T
C
=25°C
Rev 0 : Nov. 2012 www.aosmd.com Page 1 of 10
AON6932A
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.2 V
4.1 5
T
J
=125°C 5.6 6.8
6.7 8.5 mΩ
g
FS
91 S
V
SD
0.7 1 V
I
S
28 A
C
iss
1037 pF
C
oss
441 pF
C
rss
61 pF
R
g
0.7 1.5 2.3 Ω
Q
g
(10V) 15.5 22 nC
Q
g
(4.5V) 6.8 10 nC
Q
gs
3.0 nC
Q
gd
3.6 nC
t
D(on)
5.5 ns
t
r
3.3 ns
t
18
ns
Gate resistance
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
DS
=V
GS
I
D
=250µA
Reverse Transfer Capacitance
V
GS
=10V, I
D
=20A
Diode Forward Voltage
I
DSS
µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance mΩ
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
t
D(off)
18
ns
t
f
4.3 ns
t
rr
12.7 ns
Q
rr
17.2 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
R
GEN
=3
Ω
I
F
=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on RθJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Nov. 2012 www.aosmd.com Page 2 of 10
AON6932A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
2
4
6
8
10
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
VGS=4.5V
VGS=10V
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3.0V
4V
7V
10V
5V
4.5V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
ID=11.5A
25°C
125
°
C
Voltage (Note E)
(Note E)
0
5
10
15
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 0 : Nov. 2012 www.aosmd.com Page 3 of 10
AON6932A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
1ms
100us
DC
RDS(ON)
limited
TJ(Max)=150°C
T
C
=25°C
10
µ
s
100ms
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Coss
Crss
VDS=15V
I
D
=20A
TJ(Max)=150°C
TC=25°C
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
Rev 0 : Nov. 2012 www.aosmd.com Page 4 of 10
AON6932A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
RθJA=67°C/W
Rev 0 : Nov. 2012 www.aosmd.com Page 5 of 10
AON6932A
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.1 1.5 1.9 V
1.8 2.5
T
J
=125°C 2.3 3.2
2.4 3.2 mΩ
g
FS
85 S
V
SD
0.7 1 V
I
S
42 A
C
iss
3430 pF
C
oss
1327 pF
C
rss
175 pF
R
g
0.3 0.7 1.1 Ω
Q
g
(10V) 53 64 nC
Q
g
(4.5V) 25 30 nC
Q
gs
7.8 nC
Q
gd
10.3 nC
t
D(on)
7.5 ns
t
r
5.0 ns
t
33.8
ns
I
D
=10mA, V
GS
=0V
V
GS
=10V, V
DS
=15V, I
D
=20A
mΩ
I
DSS
µA
Forward Transconductance
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
Diode Forward Voltage
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
=3
Ω
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=15V, f=1MHz
Gate Drain Charge
Gate resistance
I
S
=1A,V
GS
=0V
Turn-Off DelayTime
V
GS
=0V, V
DS
=0V, f=1MHz
Gate Source Charge
Total Gate Charge
V
DS
=5V, I
D
=20A
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Total Gate Charge
t
D(off)
33.8
ns
t
f
9.8 ns
t
rr
22 ns
Q
rr
58 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
R
GEN
=3
Ω
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on RθJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Nov. 2012 www.aosmd.com Page 6 of 10
AON6932A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175 200
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
0
20
40
60
80
100
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
0
1
2
3
4
0 5 10 15 20 25 30
RDS(ON) (mΩ)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
VGS=4.5V
VGS=10V
0
20
40
60
80
100
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=2.5V
3V
10V
4.5V
(Note E)
ID=20A
25
°
C
125
°
C
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0
1
2
3
4
5
2 4 6 8 10
RDS(ON) (mΩ)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=20A
25°C
125°C
Rev 0 : Nov. 2012 www.aosmd.com Page 7 of 10
AON6932A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
1000
2000
3000
4000
5000
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
2
4
6
8
10
0 10 20 30 40 50 60
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
50
100
150
200
250
300
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Coss
C
rss
VDS=15V
ID=20A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
C
=25°C
100
µ
s
40
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
RθJC=1.6°C/W
Rev 0 : Nov. 2012 www.aosmd.com Page 8 of 10
AON6932A
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
TA=25°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
Rev 0 : Nov. 2012 www.aosmd.com Page 9 of 10
AON6932A
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VD C
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 0 : Nov. 2012 www.aosmd.com Page 10 of 10