THIS PAGE INTENTIONALLY LEFT BLANK
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 134
LINEAR & POWER AMPLIFIERS - SMT
HMC452QS16G / 452QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
v01.0205
General Description
Features
Functional Diagram
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power ampli ers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amp-
li er gain is typically 22.5 dB at 0.4 GHz and 9 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the ampli er
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G(E)ideal power ampli ers for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Output IP3: +48 dBm
22.5 dB Gain @ 400 MHz
9 dB Gain @ 2100 MHz
53% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
Electrical Speci cations, TA = +25°C, Vs= +5V, VPD = +5V [1]
Typical Applications
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range ampli er:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 400 - 410 450 - 496 810 - 960 1710 - 1990 2010 - 2170 MHz
Gain 20 22.5 19 21.5 13 15.5 7.5 10 6.5 9 dB
Gain Variation Over
Temperature 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 dB/C
Input Return Loss 13 15 9 17 11 dB
Output Return Loss 7 8 12 15 20 dB
Output Power for 1dB
Compression (P1dB) 27.5 30.5 27.5 30.5 27 30 28 31 28 31 dBm
Saturated Output
Power (Psat) 31 31 31 31.5 32.5 dBm
Output Third Order
Intercept (IP3) [2] 40 43 41 44 45 48 45 48 45 48 dBm
Noise Figure 7 7 7 7 7.5 dB
Supply Current (Icq) 485 485 485 485 485 mA
Control Current (IPD) 10 10 10 10 10 mA
[1] Speci cations and data re ect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 135
HMC452QS16G / 452QS16GE
Input Return Loss
vs. Temperature @ 400 MHz
Output Return Loss
vs. Temperature @ 400 MHz
Broadband Gain
& Return Loss @ 400 MHz Gain vs. Temperature @ 400 MHz
P1dB vs. Temperature @ 400 MHz Psat vs. Temperature @ 400 MHz
-15
-10
-5
0
5
10
15
20
25
0.1 0.2 0.3 0.4 0.5 0.6 0.7
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-16
-14
-12
-10
-8
-6
-4
-2
0
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
-16
-14
-12
-10
-8
-6
-4
-2
0
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 136
LINEAR & POWER AMPLIFIERS - SMT
30
32
34
36
38
40
42
44
46
48
50
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
50
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
8 10121416182022242628
ACPR (dBc)
Channel Power (dBm)
W-CDMA
Frequency: 400 MHz
Integration BW: 3.84 MHz
64 DPCH
5V
4.5V
5.5V
Source ACPR
-35
-30
-25
-20
-15
-10
-5
0
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0.35 0.37 0.39 0.41 0.43 0.45
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Output IP3 vs. Temperature @ 400 MHz Noise Figure vs. Temperature @ 400 MHz
Gain, Power & IP3
vs. Supply Voltage @ 400 MHz
Reverse Isolation
vs. Temperature @ 400 MHz
ACPR vs. Supply Voltage @ 400 MHz
W-CDMA , 64 DPCH
HMC452QS16G / 452QS16GE
v01.0205
Power Compression @ 400 MHz
0
5
10
15
20
25
30
35
40
45
50
55
-10-8-6-4-202468101214
Pout
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 137
Input Return Loss
vs. Temperature @ 470 MHz
Output Return Loss
vs. Temperature @ 470 MHz
Broadband Gain
& Return Loss @ 470 MHz Gain vs. Temperature @ 470 MHz
P1dB vs. Temperature @ 470 MHz Psat vs. Temperature @ 470 MHz
-15
-10
-5
0
5
10
15
20
25
0.1 0.2 0.3 0.4 0.5 0.6 0.7
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
12
13
14
15
16
17
18
19
20
21
22
23
24
0.43 0.45 0.47 0.49 0.51 0.53
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.43 0.45 0.47 0.49 0.51 0.53
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-16
-14
-12
-10
-8
-6
-4
-2
0
0.43 0.45 0.47 0.49 0.51 0.53
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
0.43 0.45 0.47 0.49 0.51 0.53
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
0.43 0.45 0.47 0.49 0.51 0.53
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 138
LINEAR & POWER AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 470 MHz Noise Figure vs. Temperature @ 470 MHz
Gain, Power & IP3
vs. Supply Voltage @ 470 MHz
Reverse Isolation
vs. Temperature @ 470 MHz
ACPR vs. Supply Voltage @ 470 MHz
W-CDMA, 64 DPCH
30
32
34
36
38
40
42
44
46
48
50
0.43 0.45 0.47 0.49 0.51 0.53
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
50
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
8 10121416182022242628
ACPR (dBc)
Channel Power (dBm)
W-CDMA
Frequency: 470 MHz
Integration BW: 3.84 MHz
64 DPCH
5V
4.5V
5.5V
Source ACPR
-40
-35
-30
-25
-20
-15
-10
-5
0
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0.43 0.45 0.47 0.49 0.51 0.53
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC452QS16G / 452QS16GE
v01.0205
0
5
10
15
20
25
30
35
40
45
50
55
-10-8-6-4-202468101214
Pout
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 470 MHz
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 139
Input Return Loss
vs. Temperature @ 900 MHz
Output Return Loss
vs. Temperature @ 900 MHz
Broadband Gain
& Return Loss @ 900 MHz Gain vs. Temperature @ 900 MHz
P1dB vs. Temperature @ 900 MHz Psat vs. Temperature @ 900 MHz
-20
-15
-10
-5
0
5
10
15
20
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-16
-14
-12
-10
-8
-6
-4
-2
0
0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
30
32
34
0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
8
9
10
11
12
13
14
15
16
17
18
0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 140
LINEAR & POWER AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 900 MHz Noise Figure vs. Temperature @ 900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 900 MHz
Reverse Isolation
vs. Temperature @ 900 MHz
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
* Icq is controlled by varying VPD.
30
32
34
36
38
40
42
44
46
48
50
0.75 0.8 0.85 0.9 0.95 1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
12 14 16 18 20 22 24 26 28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA IS95
Frequency: 910 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
5.5V
4.5V
5V
10
15
20
25
30
35
40
45
50
55
250 300 350 400 450 500
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Icq (mA)
0
1
2
3
4
5
6
7
8
9
10
0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.1
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
10
15
20
25
30
35
40
45
50
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 141
Input Return Loss
vs. Temperature @ 1900 MHz
Output Return Loss
vs. Temperature @ 1900 MHz
Broadband Gain
& Return Loss @ 1900 MHz Gain vs. Temperature @ 1900 MHz
P1dB vs. Temperature @ 1900 MHz Psat vs. Temperature @ 1900 MHz
-25
-20
-15
-10
-5
0
5
10
15
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 142
LINEAR & POWER AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 1900 MHz
Noise Figure vs.
Temperature @ 1900 MHz
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Reverse Isolation
vs. Temperature @ 1900 MHz
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
* Icq is controlled by varying VPD.
30
32
34
36
38
40
42
44
46
48
50
52
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
55
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
250 300 350 400 450 500
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Icq (mA)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
14 16 18 20 22 24 26 28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
5.5V
4.5V 5V
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 143
Input Return Loss
vs. Temperature @ 2100 MHz
Output Return Loss
vs. Temperature @ 2100 MHz
Broadband Gain
& Return Loss @ 2100 MHz Gain vs. Temperature @ 2100 MHz
P1dB vs. Temperature @ 2100 MHz Psat vs. Temperature @ 2100 MHz
-25
-20
-15
-10
-5
0
5
10
15
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-16
-14
-12
-10
-8
-6
-4
-2
0
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 144
LINEAR & POWER AMPLIFIERS - SMT
30
32
34
36
38
40
42
44
46
48
50
52
54
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
55
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
-20
-15
-10
-5
0
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
1.9 2 2.1 2.2 2.3
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Output IP3 vs. Temperature @ 2100 MHz
Noise Figure vs.
Temperature @ 2100 MHz
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
Reverse Isolation
vs. Temperature @ 2100 MHz
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH
Power Compression @ 2100 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
12 14 16 18 20 22 24 26 28
ACPR (dBc)
Source ACPR
W-CDMA
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
5V
5.5V
4.5V
0
5
10
15
20
25
30
35
40
45
50
55
10 12 14 16 18 20 22 24 26 28
Pout
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
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Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +6.0 Vdc
Control Voltage (Vpd) +5.3 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +31 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 41.5 mW/°C above 85 °C) 2.7 W
Thermal Resistance
(junction to ground paddle) 24.1 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Power Dissipation
1
1.5
2
2.5
3
-5 0 5 10 15 20
POWER DISSIPATION (W)
INPUT POWER (dBm)
Max Pdiss @ +85C
900 MHz
1900 MHz
HMC452QS16G / 452QS16GE
v01.0205
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC452QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H452
XXXX
HMC452QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H452
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 146
LINEAR & POWER AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 4, 5,
7-10, 13-16 GND These pins & package bottom must be connected to
RF/DC ground.
3VPD
Power control pin. For maximum power, this pin should be
connected to 5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
6RFIN
This pin is DC coupled.
Off chip matching components are required.
See Application Circuit herein.
11, 12 RFOUT
RF output and DC Bias input for the output ampli er stage.
Off chip matching components are required.
See Application Circuit herein.
Note: C3 should be placed as close to pins as possible.
TL1 TL2 TL3 TL4 TL5
Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm
Physical Length 0.11” 0.06” 0.12” 0.04” 0.16”
Electrical Length 3° 2° 3° 1° 4°
PCB Material: 10 mil Rogers 4350, Er = 3.48
400 MHz Application Circuit
This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
Recommended Component Values
C1, C2 12 pF
C3, C7 100 pF
C4, C5 6.8 pF
C6 39 pF
C8, C9 2.2 μF
L1 47 nH
L2 40 nH
L3 4.7 nH
L4 5.6 nH
R1 5.1 Ohms
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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400 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
List of Materials for Evaluation PCB 110380-400 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1, C2 12 pF Capacitor, 0402 Pkg.
C3, C7 100 pF Capacitor, 0402 Pkg.
C4, C5 6.8 pF Capacitor, 0402 Pkg.
C6 39 pF Capacitor, 0402 Pkg.
C8, C9 2.2 μF Capacitor, Tantalum
L1 47 nH Inductor, 0603 Pkg.
L2 40 nH Inductor, 0402 Pkg.
L3 4.7 nH Inductor, 0402 Pkg.
L4 5.6 nH Inductor, 0402 Pkg.
R1 5.1 Ohm Resistor, 0402 Pkg.
U1 HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2] 110378 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 148
LINEAR & POWER AMPLIFIERS - SMT
Note: C3 should be placed as close to pins as possible.
470 MHz Application Circuit
This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
TL1 TL2 TL3 TL4 TL5
Impedance 50 Ohm 50 Ohm 50 Ohm 50 Ohm 50 Ohm
Physical Length 0.11” 0.06” 0.12” 0.04” 0.16”
Electrical Length 3° 2° 3° 1° 4°
PCB Material: 10 mil Rogers 4350, Er = 3.48
Recommended Component Values
C1, C2 12 pF
C3, C7 100 pF
C4 6.8 pF
C5 5.6 pF
C6 39 pF
C8, C9 2.2 μF
L1 47 nH
L2 40 nH
L3 3.9 nH
L4 4.3 nH
R1 5.1 Ohms
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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470 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
List of Materials for Evaluation PCB 110381-470 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1, C2 12 pF Capacitor, 0402 Pkg.
C3, C7 100 pF Capacitor, 0402 Pkg.
C4 6.8 pF Capacitor, 0402 Pkg.
C5 5.6 pF Capacitor, 0402 Pkg.
C6 39 pF Capacitor, 0402 Pkg.
C8, C9 2.2 μF Capacitor, Tantalum
L1 47 nH Inductor, 0603 Pkg.
L2 40 nH Inductor, 0402 Pkg.
L3 3.9 nH Inductor, 0402 Pkg.
L4 4.3 nH Inductor, 0402 Pkg.
R1 5.1 Ohm Resistor, 0402 Pkg.
U1 HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2] 110378 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 150
LINEAR & POWER AMPLIFIERS - SMT
Note: C3 should be placed as close to pins as possible.
TL1 TL2 TL3
Impedance 50 Ohm 50 Ohm 50 Ohm
Physical Length 0.21” 0.19” 0.23”
Electrical Length 11° 10° 12°
PCB Material: 10 mil Rogers 4350, Er = 3.48
Recommended Component Values
C1 10 pF
C2, C6 5.6 pF
C3, C7 100 pF
C4 2.2 pF
C5 5 pF
C8, C9 2.2 μF
L1, L2 20 nH
R1 5.6 Ohm
900 MHz Application Circuit
This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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900 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
List of Materials for Evaluation PCB 108715-900 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1 10 pF Capacitor, 0402 Pkg.
C2, C6 5.6 pF Capacitor, 0402 Pkg.
C3, C7 100 pF Capacitor, 0402 Pkg.
C4 2.2 pF Capacitor, 0402 Pkg.
C5 5 pF Capacitor, 0402 Pkg.
C8, C9 2.2 μF Capacitor, Tantalum
L1, L2 20 nH Inductor, 0402 Pkg.
R1 5.6 Ohm Resistor, 0402 Pkg.
U1 HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2] 108713 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 152
LINEAR & POWER AMPLIFIERS - SMT
1900 MHz Application Circuit
This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
Note: C2, C3 and C4 should be placed as close to pins as possible.
Recommended Component Values
C1 2.7 pF
C2 2 pF
C3, C5, C6 100 pF
C4 3.3 pF
C7, C8 2.2 μF
L1, L2 20 nH
R1 5.6 Ohms
TL1 TL2
Impedance 50 Ohm 50 Ohm
Physical Length 0.04” 0.08”
Electrical Length 4° 9°
PCB Material: 10 mil Rogers 4350, Er = 3.48
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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1900 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
List of Materials for Evaluation PCB 108703-1900 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1 2.7 pF Capacitor, 0402 Pkg.
C2 2 pF Capacitor, 0402 Pkg.
C3, C5, C6 100 pF Capacitor, 0402 Pkg.
C4 3.3 pF Capacitor, 0402 Pkg.
C7, C8 2.2 μF Capacitor, Tantalum
L1, L2 20 nH Inductor, 0402 Pkg.
R1 5.6 Ohm Resistor, 0402 Pkg.
U1 HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2] 108701 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 154
LINEAR & POWER AMPLIFIERS - SMT
2100 MHz Application Circuit
This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC
Applications Group for assistance in optimizing performance for your application.
Note: C2, C3 and C4 should be placed as close to pins as possible.
Recommended Component Values
C1 4.7 pF
C2 2 pF
C3, C6 100 pF
C4 3.3 pF
C5 15 pF
C7, C8 2.2 μF
L1 12 nH
L2 10 nH
R1 5.1 Ohms
TL1 TL2
Impedance 50 Ohm 50 Ohm
Physical Length 0.04” 0.08”
Electrical Length 5° 10°
PCB Material: 10 mil Rogers 4350, Er = 3.48
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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2100 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
List of Materials for Evaluation PCB 111041-2100 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1 4.7 pF Capacitor, 0402 Pkg.
C2 2 pF Capacitor, 0402 Pkg.
C3, C6 100 pF Capacitor, 0402 Pkg.
C4 3.3 pF Capacitor, 0402 Pkg.
C5 15 pF Capacitor, 0402 Pkg.
C7, C8 2.2 μF Capacitor, Tantalum
L1 12 nH Inductor, 0402 Pkg.
L2 10 nH Inductor, 0402 Pkg.
R1 5.1 Ohm Resistor, 0402 Pkg.
U1 HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2] 111039 Evaluation PCB, 10 mils
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
HMC452QS16G / 452QS16GE
v01.0205 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
