SSM6J507NU
1
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J507NU
SSM6J507NU
SSM6J507NU
SSM6J507NU
Start of commercial production
2015-05
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Power Management Switches
2.
2.
2.
2. Features
Features
Features
Features
(1) 4 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 20 mΩ (max) (@VGS = -10 V)
RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V)
3.
3.
3.
3. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
UDFN6B
1.2.5.6 Drain
3. Gate
4. Source
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Channel temperature
Storage temperature
(t ≤ 10 s)
(Note 1)
(Note 1), (Note 2)
(Note 3)
(Note 3)
Symbol
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
Rating
-30
-25 / +20
-10
-30
1.25
2.5
150
-55 to 150
Unit
V
A
W
W
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Note 3: Device mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
3
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Forward transfer admittance
(Note 1)
(Note 2)
(Note 2)
Symbol
IGSS
IDSS
V(BR)DSS
Vth
RDS(ON)
|Yfs|
Test Condition
VGS = ±16 V, VDS = 0 V
VDS = -30 V, VGS = 0 V
ID = -250 µA, VGS = 0 V
VDS = VGS, ID = -250 µA
ID = -4.0 A, VGS = -10 V
ID = -4.0 A, VGS = -4.5 V
ID = -4.0 A, VGS = -4.0 V
VDS = -10 V, ID = -2.0 A
Min
-30
-1.0
Typ.
14
19
21
14
Max
±1
-1
-2.2
20
28
32
Unit
µA
V
mΩ
S
Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-250 µA
for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 2: Pulse measurement.
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
ton
toff
Test Condition
VDS = -15 V, VGS = 0 V,
f = 1 MHz
VDD = -15 V, ID = -2.0 A
VGS = 0 to -4.5 V, RG = 10 Ω,
Duty ≤ 1%,VIN: tr, tf < 5 ns,
Common source, See Chapter 5.3.
Min
Typ.
1150
185
210
55
170
Max
Unit
pF
ns
5.3.
5.3.
5.3.
5.3. Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Fig.
Fig.
Fig.
Fig. 5.3.1
5.3.1
5.3.1
5.3.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit Fig.
Fig.
Fig.
Fig. 5.3.2
5.3.2
5.3.2
5.3.2 Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
Input Waveform/Output Waveform
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Qgs1
Qgd
Test Condition
VDD = -15 V, VGS = -4.5 V,
ID = -10 A
Min
Typ.
13.6
2.6
5.8
Max
20.4
Unit
nC
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
4
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Diode forward voltage (Note 1)
Symbol
VDSF
Test Condition
ID = 4 A, VGS = 0 V
Min
Typ.
0.78
Max
1.0
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
7.
7.
7.
7. Internal Equivalent Circuit
Internal Equivalent Circuit
Internal Equivalent Circuit
Internal Equivalent Circuit
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
ID
D
D
D - V
- V
- V
- VGS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - V
- V
- V
- VGS
GS
GS
GS Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - V
- V
- V
- VGS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - I
- I
- I
- ID
D
D
DFig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - T
- T
- T
- Ta
a
a
a
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 V
V
V
Vth
th
th
th - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 C - V
C - V
C - V
C - VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics
Dynamic Input Characteristics Fig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 t - I
t - I
t - I
t - ID
D
D
D
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 I
I
I
IDR
DR
DR
DR - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.12
8.12
8.12
8.12 Safe Operating Area
Safe Operating Area
Safe Operating Area
Safe Operating Area
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
7
Fig.
Fig.
Fig.
Fig. 8.13
8.13
8.13
8.13 r
r
r
rth
th
th
th - t
- t
- t
- tw
w
w
wFig.
Fig.
Fig.
Fig. 8.14
8.14
8.14
8.14 P
P
P
PD
D
D
D - T
- T
- T
- Ta
a
a
a
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
8
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 8.5 mg (typ.)
Package Name(s)
TOSHIBA: 2-2AA1A
Nickname: UDFN6B
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
SSM6J507NU
9
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
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information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
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and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample
application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications.
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• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
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EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
2015-11-10
Rev.2.0
©2015 Toshiba Corporation
