DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip design Planar passivated beam-lead and chip construction Packages rated MSL1, 260 C per JEDEC J-STD-020) Skyworks Pb-free products are compliant with all applicable legislation. For additional information, refer to Skyworks Definition of Lead (Pb)-Free, document number SQ04-0073. efficiency during manual operations, and is ideal for automated assembly. The choice of N- and P-type silicon allows the designer to optimize the silicon material for the intended application: Doppler mixers and high-sensitivity detectors benefit from using the low noise characteristics of the P-type silicon. Low conversion loss mixers and biased detectors can be designed using standard N-type material. Description Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available. Packaged diodes are suitable for use in waveguide, coaxial, and stripline applications. Beam-lead and chip diodes can also be mounted in a variety of packages or on special customer substrates. Unmounted beam-lead diodes are especially well suited for use in Microwave Integrated Circuit (MIC) applications. Mounted beamlead diodes can be easily used in MIC, stripline, or other such circuitry. These "universal chips" are designed for a high degree of device reliability in both commercial and industrial uses. The offset bond pad assures that no mechanical damage occurs at the junction during the wire bonding. Additionally, the 4 mil bond pad eliminates performance variation due to bonding, improves Applications These diodes are categorized by Tangential Signal Sensitivity (TSS) for detector applications in four frequency ranges: S, X, Ku, and Ka bands. However, they can also be used as modulators, high-speed switches, and low-power limiters. TSS is a parameter that describes a diode's detector sensitivity. It is defined as the amount of signal power, below a one-milliwatt reference level, required to produce an output pulse with an amplitude sufficient to raise the noise fluctuations by an amount equal to the average noise level. TSS is approximately 4 dB above the minimum detectable signal. The P-type Schottky diodes in this Data Sheet are optimized for low noise in the 1/f region. They require a small forward bias (to reduce video resistance) if efficient operation is required. The bias not only increases sensitivity but also reduces parameter variation due to temperature change. Video impedance is a direct function of bias and follows the 26/l (mA) relationship. This is important to pulse fidelity, since the video impedance together with the detector output capacitance affects the effective amplifier bandwidth. Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847F * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * September 30, 2013 1 SILICON SCHOTTKY BARRIER DIODES Bias does, however, increase typical noise, particularly in the 1/f region. Therefore, it should be kept as low as possible (typically 5 to 50 A). Wire Bonding Two methods can be used to connect wire, ribbon, and wire mesh to the chips: Thermocompression Assembly and Handling Procedure Ballbonding Die Attach Methods Skyworks recommends use of pure gold wire (0.7 to 1.25 mil diameter). Universal chips are compatible with both eutectic and conductive epoxy die attach methods. Eutectic composition preforms of Au/Sn or Au/Ge are useful when soldering devices in circuit. Gold/silicon eutectic die attachments can be accomplished by scrubbing the chip directly to the gold plated bonding area. Electrical and physical specifications for the silicon Schottky barrier diodes are provided in Tables 1 through 6. SPICE model parameters are defined in Table 7. Typical performance characteristics are shown in Figures 1 through 4. Typical video detector circuits are shown in Figure 5. Epoxy die attachments with silver or gold filled conductive epoxies can also be used when thermal heat sinking is not a requirement. Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes (Note 1) Electrical Characteristics Frequency Band Part Number TSS (dBm) (Note 2) RV () CJ @ 0 V (pF) Typ. Min. Max. Max. VF @ 1 mA (mV) Vb @ 10 A (V) Test Frequency (GHz) Outline Drawing X DDB2503-000 +50 500 700 0.15 200-350 2 10.00 491-006 Ku DDB2504-000 +48 500 700 0.10 200-350 2 16.00 491-006 K DDB2265-000 +50 (Note 3) 800 (Note 3) 1200 (Note 3) 0.10 300-450 3 24.15 491-006 Note 1: Performance is guaranteed only under the conditions listed in this Table. Note 2: Bias = 50 A Video bandwidth = 10 MHz. Note 3: Bias = 30 A Table 2. Epoxy and Hermetic Packaged Beam-Lead P-Type Detector Schottky Diodes Part Numbers/Outline Drawings Epoxy Stripline 250 Epoxy Stripline 230 Hermetic Stripline 220 DDB2503-250 DDB2503-230 DDB2503-220 DDB2504-250 DDB2504-230 DDB2504-220 DDB2265-250 DDB2265-230 DDB2265-220 Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 2 September 30, 2013 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847F DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Table 3. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips Electrical Characteristics Frequency Band Part Number Barrier Ku CDB7620-000 Low K CDB7619-000 Low RV () TSS (dBm) (Note 1) CJ @ 0 V (pF) Typ. Min. Max. 537 +40 0.15 250-350 735 +50 (Note 3) 0.10 275-375 VF @ 1 mA (mV) RT @ 10 mA () (Note 2) VB @ 10 A (V) Max. Min. 30 2 571-006 40 3 571-006 Outline Drawing Note 1: Bias = 50 A Video bandwidth = 10 MHz RV = 2800 Note 2: Rt is the slope resistance @ 10 mA. The maximum series resistance (Rs) is calculated as: Rs = Rt - 2.8. Note 3: Bias = 30 A Table 4. Hermetic Packaged P-Type Detector Schottky Diode Chips Part Numbers/Outline Drawings Hermetic Pill 207 Hermetic Pill 203 CDB7620-207 CDB7620-203 CDB7619-207 CDB7619-203 Table 5. Electrical Specifications: N-Type Detector Schottky Diode Chips Electrical Characteristics Frequency Band X Part Number CDF7623-000 Barrier VF @ 1 mA (mV) Low 240-300 RV () CJ @ 0 V (pF) RT @ 10 mA () VB @ 10 A (V) Max. Max. Min. Typ. 0.30 10 2 245 Outline Drawing 571-011 K CDF7621-000 Low 270-350 0.10 20 2 680 571-011 Ku CME7660-000 Medium 350-450 0.15 10 3 - 571-011 K CDE7618-000 Medium 375-500 0.10 20 3 - 571-011 Ku CDP7624-000 Medium/High 450-575 0.15 15 3 - 571-011 Table 6. Hermetic Packaged Beam-Lead N-Type Detector Schottky Diode Chips Part Numbers/Outline Drawings Hermetic Ceramic Pill 207 Hermetic Ceramic Pill 203 CDF7623-207 CDF7623-203 CDF7621-207 CDF7621-203 CME7660-207 CME7660-203 CDE7618-207 CDE7618-203 CDP7624-207 CDP7624-203 Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847F * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * September 30, 2013 3 DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Table 7. SPICE Model Parameters Parameter Units Part Number CDB7620-000 CDF7621-000 CDC7623-000 CDB7619-000 IS A 4E-08 9E-08 1.1E-07 3E-08 RS 4 6 5 30 N - 1.20 1.10 1.10 1.04 TT sec 1E-11 1E-11 1E-11 1E-11 CJO pF 0.15 0.11 0.20 0.11 M - 0.35 0.30 0.30 0.32 EG eV 0.69 0.69 0.69 0.69 XTI - 2 2 2 2 FC - 0.5 0.5 0.5 0.5 BV V 10 2.5 2.5 3.0 IBV A 1E-05 1E-05 1E-05 1E-05 VJ V 0.495 0.510 0.510 0.540 10-1 10-1 10-2 10-2 Forward Current (A) Forward Current (A) Typical I-V Characteristics 10-3 10-4 10-5 10-3 10-4 10-5 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Forward Voltage (V) Figure 1. CDF7621-000 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Forward Voltage (V) Figure 2. CDB7619-000 Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 4 September 30, 2013 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847F DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Typical Performance Data 10000.00 RL = 1 M 10000.00 RL = 10 k Voltage Output (mV) 1000.00 RL = 100 RL = 100 k 100.00 RL = 10 10.00 RL = 1 Test Conditions: f = 9.375 GHz DC Bias = 0 0.10 -30 -20 -10 0 +10 Voltage Output (mV) RL = 1 k 1.00 RL = 1 k 1000.00 RL = 1 M 50 A 100.00 5 A RL = 10 50 A 10.00 5 A 1.00 Test Conditions: f = 9.375 GHz 5 A +20 0.10 -30 -20 -10 0 +10 +20 Input Power (dBm) Input Power (dBm) Figure 3. Voltage Output vs Input Power as a Function of Load Resistance Figure 4. Voltage Output vs Input Power as a Function of Load Resistance and Bias Shipping Information Unbiased RF Bypass Input Video Output Load Resistor DC Return Individual Chips Skyworks silicon Schottky barrier diodes are provided in waffle packs for bare die and in gel-pack carriers for beamlead devices. Package dimensions are provided in Figures 6 through 13. Bias Supply Biased RF Bypass Input Video Output Load Resistor DC Return Multi-Octave-High Sensitivity Unbiased RF Bypass Input Video Output Load Resistor Bias Supply Biased Input RF Bypass Video Output Load Resistor 50 Broadband-Low Sensitivity Figure 5. Typical Video Detector Circuits Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847F * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * September 30, 2013 5 DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Schematic N-Type 1 1 0.050 (1.27 mm) 0.040 (1.02 mm) 2 2 0.055 (1.40 mm) 0.051 (1.30 mm) Dia. S1569 Figure 6. -203 Package Dimensions 0.064 (1.63 mm) 0.060 (1.52 mm) Dia. 2 Plcs. 0.086 (2.18 mm) Max. Dia. Schematic P-type Schematic N-type Metal Ceramic 0.200 (5.08 mm) Nom. 0.076 (2.10 mm) 0.006 (1.78 mm) Metal 0.062 (1.63 mm) 0.002 (1.52 mm) 2 Plcs Figure 7. -207 Package Dimensions Schematic 2 1 -011 (220) 0.185 (4.70 mm) 0.145 (3.68 mm) 3 Plcs. 0.068 (1.73 mm) 0.064 (1.63 mm) Dia. Colored Dot Denotes Cathode 0.070 (1.78 mm) Sq. 0.005 (0.13 mm) 0.003 (0.08 mm) 3 Plcs. 0.022 (0.56 mm) 0.018 (0.46 mm) 3 Plcs. 0.042 (1.07 mm) 0.028 (0.71 mm) Figure 8. -220 Package Dimensions Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 6 September 30, 2013 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847F DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Schematic 1 2 Colored Dot Denotes Cathode 0.090 (2.29 mm) Min. 2 Plcs. 1 2 0.013 (0.33 mm) 0.017 (0.43 mm) 2 Plcs. 50 Deg. 40 Deg. Epoxy Encapsulation Au-Plated Leads 0.030 (0.76 mm) Max. 0.003 (0.08 mm) 0.005 (0.13 mm) 0.008 (0.20 mm) 0.012 (0.30 mm) Ceramic Base 0.051 (1.30 mm) 0.055 (1.40 mm) Figure 9. -230 Package Dimensions Schematic 1 2 0.100 (2.54 mm) Dia. 0.090 (2.28 mm) 0.110 (2.79 mm) 2 Plcs. Colored Dot Denotes Cathode 1 2 0.018 (0.45 mm) 0.122 (0.55 mm) 2 Plcs. 50 Deg. 40 Deg. Epoxy Encapsulation Au-Plated Leads 0.018 (0.45 mm) 0.122 (0.55 mm) 0.003 (0.08 mm) 0.005 (0.13 mm) 0.050 (1.27 mm) Max. Figure 10. -250 Package Dimensions 0.013 (0.33 mm) 0.011 (0.28 mm) 0.011 (0.28 mm) 0.009 (0.23 mm) 0.006 (0.15 mm) 0.004 (0.10 mm) 2 Plcs. 0.009 (0.23 mm) 0.007 (0.18 mm) 0.006 (0.015 mm) 0.003 (0.005 mm) 0.009 (0.23 mm) 0.007 (0.18 mm) 0.0025 (0.06 mm) Max. Top View Schematic Figure 11. 491-006 Package Dimensions Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847F * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * September 30, 2013 7 DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Cathode/Bonding Pad Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm) 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0085 (0.216 mm) 0.0065 (0.165 mm) Backside Contact (Anode) Gold Metallization Dimensions are in inches (millimeters shown in parentheses) S3181 Figure 12. 571-006 Package Dimensions Anode/Bonding Pad Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm) 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0095 (0.241 mm) 0.0115 (0.292 mm) 0.0085 (0.216 mm) 0.0065 (0.165 mm) Dimensions are in inches (millimeters shown in parentheses) S3182 Figure 13. 571-011 Package Dimensions Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 8 September 30, 2013 * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * 200847F DATA SHEET * SILICON SCHOTTKY BARRIER DIODES Copyright (c) 2002-2009, 2011-2013 Skyworks Solutions, Inc. 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Skyworks Solutions, Inc. * Phone [781] 376-3000 * Fax [781] 376-3100 * sales@skyworksinc.com * www.skyworksinc.com 200847F * Skyworks Proprietary Information * Products and Product Information are Subject to Change Without Notice * September 30, 2013 9