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DATA SHEET
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips
and Beam Leads
Applications
Detectors
Mixers
Features
Available in both P-type and N-type low barrier designs
Low 1/f noise
Large bond pad chip design
Planar passivated beam-lead and chip construction
Packages rated MSL1, 260 C per JEDEC J-STD-020)
Skyworks Pb-free products are compliant with
all applicable legislation. For additional
information, refer to Skyworks Definition of
Lead (Pb)-Free, document number SQ04-0073.
Description
Skyworks packaged, beam-lead and chip Schottky barrier
detector diodes are designed for applications through 40 GHz in
the Ka band. They are made by the deposition of a suitable barrier
metal on an epitaxial silicon substrate to form the junction. The
process and choice of materials result in low series resistance
along with a narrow spread of capacitance values for close
impedance control. P-type silicon is used to obtain superior 1/f
noise characteristics. N-type silicon is also available.
Packaged diodes are suitable for use in waveguide, coaxial, and
stripline applications. Beam-lead and chip diodes can also be
mounted in a variety of packages or on special customer
substrates.
Unmounted beam-lead diodes are especially well suited for use in
Microwave Integrated Circuit (MIC) applications. Mounted beam-
lead diodes can be easily used in MIC, stripline, or other such
circuitry.
These “universal chips” are designed for a high degree of device
reliability in both commercial and industrial uses. The offset bond
pad assures that no mechanical damage occurs at the junction
during the wire bonding. Additionally, the 4 mil bond pad
eliminates performance variation due to bonding, improves
efficiency during manual operations, and is ideal for automated
assembly.
The choice of N- and P-type silicon allows the designer to
optimize the silicon material for the intended application:
Doppler mixers and high-sensitivity detectors benefit from using
the low noise characteristics of the P-type silicon.
Low conversion loss mixers and biased detectors can be
designed using standard N-type material.
Applications
These diodes are categorized by Tangential Signal Sensitivity
(TSS) for detector applications in four frequency ranges: S, X, Ku,
and Ka bands. However, they can also be used as modulators,
high-speed switches, and low-power limiters.
TSS is a parameter that describes a diode’s detector sensitivity. It
is defined as the amount of signal power, below a one-milliwatt
reference level, required to produce an output pulse with an
amplitude sufficient to raise the noise fluctuations by an amount
equal to the average noise level. TSS is approximately 4 dB above
the minimum detectable signal.
The P-type Schottky diodes in this Data Sheet are optimized for
low noise in the 1/f region. They require a small forward bias (to
reduce video resistance) if efficient operation is required. The bias
not only increases sensitivity but also reduces parameter variation
due to temperature change. Video impedance is a direct function
of bias and follows the 26/l (mA) relationship. This is important to
pulse fidelity, since the video impedance together with the
detector output capacitance affects the effective amplifier
bandwidth.
SILICON SCHOTTKY BARRIER DIODES
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Bias does, however, increase typical noise, particularly in the 1/f
region. Therefore, it should be kept as low as possible (typically 5
to 50 μA).
Assembly and Handling Procedure
Die Attach Methods
Universal chips are compatible with both eutectic and conductive
epoxy die attach methods.
Eutectic composition preforms of Au/Sn or Au/Ge are useful when
soldering devices in circuit. Gold/silicon eutectic die attachments
can be accomplished by scrubbing the chip directly to the gold
plated bonding area.
Epoxy die attachments with silver or gold filled conductive epoxies
can also be used when thermal heat sinking is not a requirement.
Wire Bonding
Two methods can be used to connect wire, ribbon, and wire mesh
to the chips:
Thermocompression
Ballbonding
Skyworks recommends use of pure gold wire (0.7 to 1.25 mil
diameter).
Electrical and physical specifications for the silicon Schottky
barrier diodes are provided in Tables 1 through 6. SPICE model
parameters are defined in Table 7. Typical performance
characteristics are shown in Figures 1 through 4. Typical video
detector circuits are shown in Figure 5.
Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes (Note 1)
Frequency
Band Part Number
Electrical Characteristics
Test
Frequency
(GHz)
Outline
Drawing
TSS
(dBm)
(Note 2)
RV
(Ω)
CJ @ 0 V
(pF) VF @ 1 mA
(mV)
Vb @ 10 μA
(V)
Typ. Min. Max. Max.
X DDB2503-000 +50 500 700 0.15 200-350 2 10.00 491-006
Ku DDB2504-000 +48 500 700 0.10 200-350 2 16.00 491-006
K DDB2265-000 +50
(Note 3)
800
(Note 3)
1200
(Note 3)
0.10 300-450 3 24.15 491-006
N
ote 1: Performance is guaranteed only under the conditions listed in this Table.
N
ote 2: Bias = 50 μA
Video bandwidth = 10 MHz.
N
ote 3: Bias = 30 μA
Table 2. Epoxy and Hermetic Packaged Beam-Lead P-Type Detector Schottky Diodes
Part Numbers/Outline Drawings
Epoxy Stripline
250
Epoxy Stripline
230
Hermetic Stripline
220
DDB2503-250 DDB2503-230 DDB2503-220
DDB2504-250 DDB2504-230 DDB2504-220
DDB2265-250 DDB2265-230 DDB2265-220
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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Table 3. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips
Frequency
Band Part Number Barrier
Electrical Characteristics
Outline
Drawing
RV
(Ω)
TSS
(dBm)
(Note 1)
CJ @ 0 V
(pF) VF @ 1 mA
(mV)
RT @ 10 mA
(Ω)
(Note 2)
VB @ 10 μA
(V)
Typ. Min. Max. Max. Min.
Ku CDB7620-000 Low 537 +40 0.15 250-350 30 2 571-006
K CDB7619-000 Low 735 +50 (Note 3) 0.10 275-375 40 3 571-006
N
ote 1: Bias = 50 μA
Video bandwidth = 10 MHz
RV = 2800 Ω
N
ote 2: Rt is the slope resistance @ 10 mA. The maximum series resistance (Rs) is calculated as: Rs = Rt – 2.8.
N
ote 3: Bias = 30 μA
Table 4. Hermetic Packaged P-Type Detector Schottky Diode Chips
Part Numbers/Outline Drawings
Hermetic Pill
207
Hermetic Pill
203
CDB7620-207 CDB7620-203
CDB7619-207 CDB7619-203
Table 5. Electrical Specifications: N-Type Detector Schottky Diode Chips
Frequency
Band Part Number
Electrical Characteristics RV
(Ω) Outline
Drawing
Barrier VF @ 1 mA
(mV)
CJ @ 0 V
(pF)
RT @ 10 mA
(Ω)
VB @ 10 μA
(V)
Max. Max. Min. Typ.
X CDF7623-000 Low 240-300 0.30 10 2 245 571-011
K CDF7621-000 Low 270-350 0.10 20 2 680 571-011
Ku CME7660-000 Medium 350-450 0.15 10 3 – 571-011
K CDE7618-000 Medium 375-500 0.10 20 3 – 571-011
Ku CDP7624-000 Medium/High 450-575 0.15 15 3 – 571-011
Table 6. Hermetic Packaged Beam-Lead N-Type Detector Schottky Diode Chips
Part Numbers/Outline Drawings
Hermetic Ceramic Pill
207
Hermetic Ceramic Pill
203
CDF7623-207 CDF7623-203
CDF7621-207 CDF7621-203
CME7660-207 CME7660-203
CDE7618-207 CDE7618-203
CDP7624-207 CDP7624-203
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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Table 7. SPICE Model Parameters
Parameter Units Part Number
CDB7620-000 CDF7621-000 CDC7623-000 CDB7619-000
IS A 4E-08 9E-08 1.1E-07 3E-08
RS Ω 4 6 5 30
N – 1.20 1.10 1.10 1.04
TT sec 1E-11 1E-11 1E-11 1E-11
CJO pF 0.15 0.11 0.20 0.11
M – 0.35 0.30 0.30 0.32
EG eV 0.69 0.69 0.69 0.69
XTI – 2 2 2 2
FC – 0.5 0.5 0.5 0.5
BV V 10 2.5 2.5 3.0
IBV A 1E-05 1E-05 1E-05 1E-05
VJ V 0.495 0.510 0.510 0.540
Typical I-V Characteristics
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage (V)
10
–1
10
–2
10
–3
10
–4
10
–5
Forward Current (A)
10
–6
Figure 1. CDF7621-000
0 0.1 0.2 0.3 0.4 0.5 0.60.7 0.8 0.91.0
Forward Voltage (V)
Forward Current (A)
10
–1
10
–2
10
–3
10
–4
10
–5
10
–6
Figure 2. CDB7619-000
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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Typical Performance Data
0.10
–30 –20 –10 0 +10 +20
1.00
10.00
100.00
1000.00
10000.00
R
L
= 100 kΩ
Test Conditions:
f = 9.375 GHz
DC Bias = 0
Input Power (dBm)
Voltage Output (mV)
R
L
= 1 MΩ
R
L
= 10 kΩ
R
L
= 1 kΩ
R
L
= 100 Ω
R
L
= 10 Ω
R
L
= 1 Ω
Figure 3. Voltage Output vs Input Power as a Function of Load
Resistance
0.10
–30 –20 –10 0 +10 +20
1.00
10.00
100.00
1000.00
10000.00
Input Power (dBm)
Voltage Output (mV)
R
L
= 1 kΩ
50 μA
5 μA
5 μA
R
L
= 1 MΩ
R
L
= 10 Ω
Test Conditions:
f = 9.375 GHz
50 μA
5 μA
Figure 4. Voltage Output vs Input Power as a Function of Load
Resistance and Bias
Load Resistor
DC Return
RF Bypass
Unbiased
Load Resistor
DC Return
RF Bypass
Biased
Bias Supply
Multi-Octave–High Sensitivity
Load Resistor
RF Bypass
Unbiased
Load Resistor
RF Bypass
Biased
Bias Supply
Video Output
Video OutputInput
Video OutputInput
Video OutputInput
Input
Broadband–Low Sensitivity
50 Ω
Figure 5. Typical Video Detector Circuits
Shipping Information
Individual Chips
Skyworks silicon Schottky barrier diodes are provided in waffle
packs for bare die and in gel-pack carriers for beamlead devices.
Package dimensions are provided in Figures 6 through 13.
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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0.050 (1.27 mm)
0.040 (1.02 mm)
0.055 (1.40 mm)
0.051 (1.30 mm)
Dia.
Schematic
N-Type
S1569
1
2
1
2
Figure 6. -203 Package Dimensions
Schematic
N-type
0.076 (2.10 mm)
±0.006 (1.78 mm)
0.200 (5.08 mm)
Nom.
0.086 (2.18 mm)
Max. Dia.
0.064 (1.63 mm)
0.060 (1.52 mm)
Dia. 2 Plcs.
0.062 (1.63 mm)
±0.002 (1.52 mm)
2 Plcs
Metal
Ceramic
Metal
Schematic
P-type
Figure 7. -207 Package Dimensions
-011 (220)
21
Schematic
Colored Dot
Denotes Cathode
0.068 (1.73 mm)
0.064 (1.63 mm)
Dia.
0.022 (0.56 mm)
0.018 (0.46 mm)
3 Plcs.
0.185 (4.70 mm)
0.145 (3.68 mm)
3 Plcs.
0.005 (0.13 mm)
0.003 (0.08 mm)
3 Plcs.
0.042 (1.07 mm)
0.028 (0.71 mm)
0.070 (1.78 mm)
Sq.
Figure 8. -220 Package Dimensions
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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Schematic
2
21
Colored Dot
Denotes Cathode
0.051 (1.30 mm)
0.055 (1.40 mm)
0.090 (2.29 mm)
Min. 2 Plcs.
0.013 (0.33 mm)
0.017 (0.43 mm)
2 Plcs.
0.003 (0.08 mm)
0.005 (0.13 mm)
0.008 (0.20 mm)
0.012 (0.30 mm)
Epoxy Encapsulation
Au-Plated Leads
Ceramic Base
0.030
(0.76 mm)
Max.
1
50 Deg.
40 Deg.
Figure 9. -230 Package Dimensions
2
1
2
1
50 Deg.
40 Deg.
Schematic
Colored Dot
Denotes Cathode
Epoxy Encapsulation
Au-Plated Leads
0.018 (0.45 mm)
0.122 (0.55 mm)
2 Plcs.
0.018 (0.45 mm)
0.122 (0.55 mm)
0.090 (2.28 mm)
0.110 (2.79 mm)
2 Plcs.
0.100 (2.54 mm)
Dia.
0.050 (1.27 mm)
Max.
0.003 (0.08 mm)
0.005 (0.13 mm)
Figure 10. -250 Package Dimensions
Top View
Schematic
0.013 (0.33 mm)
0.011 (0.28 mm)
0.011 (0.28 mm)
0.009 (0.23 mm)
0.009 (0.23 mm)
0.007 (0.18 mm)
0.009 (0.23 mm)
0.007 (0.18 mm)
0.006 (0.015 mm)
0.003 (0.005 mm)
0.006 (0.15 mm)
0.004 (0.10 mm)
2 Plcs.
0.0025 (0.06 mm)
Max.
Figure 11. 491-006 Package Dimensions
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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Cathode/Bonding Pad
Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0085 (0.216 mm)
0.0065 (0.165 mm)
Backside Contact (Anode)
Gold Metallization
Dimensions are in inches (millimeters shown in parentheses)
S3181
Figure 12. 571-006 Package Dimensions
Anode/Bonding Pad
Diameter 0.0035 to 0.0045 (0.089 mm to 0.114 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0095 (0.241 mm)
0.0115 (0.292 mm)
0.0085 (0.216 mm)
0.0065 (0.165 mm)
S3182
Dimensions are in inches (millimeters shown in parentheses)
Figure 13. 571-011 Package Dimensions
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
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200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013 9
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