To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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2SK3147(L), 2SK3147(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1072-0300
Rev.3.00
Aug 17, 2009
Features
• Low on-resistance
RDS = 0.1 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
123
4
123
4D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID5 A
Drain peak current ID(pulse)Note1 20 A
Body-drain diode reverse drain current IDR 5 A
Avalanche current IAP Note3 5 A
Avalanche energy EAR Note3 2.5 mJ
Channel dissipation Pch Note2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 1 of 8
2SK3147(L), 2SK3147(S)
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 2 of 8
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 μA, VDS = 0
Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 μA VDS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
RDS(on) — 0.1 0.13 Ω I
D = 3 A, VGS = 10 VNote4
Static drain to source on state
resistance RDS(on) — 0.13 0.17 Ω I
D = 3 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 3.5 6 — S ID = 3 A, VDS = 10 V Note4
Input capacitance Ciss — 420 — pF
Output capacitance Coss — 185 — pF
Reverse transfer capacitance Crss — 100 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 10 — ns
Rise time tr— 35 — ns
Turn-off delay time td(off) — 110 — ns
Fall time tf— 60 — ns
ID = 3 A, VGS = 10V,
RL = 10 Ω
Body–drain diode forward voltage VDF — 0.85 — V IF = 5 A, VGS = 0
Body–drain diode reverse recovery
time
trr — 85 — ns
IF = 5 A, VGS = 0
diF/ dt = 50 A/ μs
Note: 4. Pulse test
2SK3147(L), 2SK3147(S)
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
40
30
20
10
050 100 150 200
50
20
10
5
1
0.1
12 5
10 20 50 100
10
8
6
4
2
01234
0246810 5
Ta = 25°C
Tc = 75°C
25°C
–25°C
Operation in
this area is
limited by R
DS(on)
V
DS = 10 V
Pulse Test
100 μs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 μs
10
8
6
4
2
3.5 V
3 V
V
GS
=2.5 V
10 V Pulse Test
6 V
4 V
500
2
0.2
0.5
200
0.1 1 100.2 5
0.5
0.02
0.05
0.01
20.5
2.5
2.0
1.5
1.0
0.5
048
12 16 20
ID = 5 A
1 A
2 A
5020
0.2
0.1
V
GS
= 4 V
10 V
Pulse Test
Pulse Test
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 3 of 8
2SK3147(L), 2SK3147(S)
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance ⏐yfs⏐ (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
0.50
0.40
0.30
0.20
0.10
–40 0 40 80 120 160
0
0.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
V
GS
= 4 V
10 V
1, 2 A
5 A
25°C
Tc = –25°C
75°C
Pulse Test
V
DS
= 10 V
Pulse Test
1, 2 A
5 A
0.1 0.3 1 3 10 30 100 0102030405
2000
5000
1000
100
200
500
0
200
160
120
80
40
0
20
16
12
8
4
8 16243240
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1 0.3 1310 30 100
di / dt = 50 A / μs
V
GS
= 0, Ta = 25°C
10
20
50
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 5 A
V
GS
V
DS
V
DD
= 100 V
50 V
25 V
V
DD
= 100 V
50 V
25 V
tf
tr
td(on)
td(off)
V
GS
= 10 V, V
DD
= 30 V
PW = 5 μs, duty < 1 %
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 4 of 8
2SK3147(L), 2SK3147(S)
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
10
8
6
4
2
00.4 0.8 1.2 1.6 2.0
V
GS
= 0, –5 V
10 V
5 V
2.5
2.0
1.5
1.0
0.5
25 50 75 100 125 150
0
Pulse Test
I
AP= 5 A
V
DD = 50 V
duty < 0.1 %
Rg > 50 Ω
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 6.25°C/W, Tc = 25°C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 5 of 8
2SK3147(L), 2SK3147(S)
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 6 of 8
2SK3147(L), 2SK3147(S)
Package Dimensions
6.5 ± 0.52.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.51.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.52.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
Previous Code
PRSS0004ZD-B
DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.]
0.42g⎯
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
DPAK(L)-(2)
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Previous Code
PRSS0004ZD-CDPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
DPAK(S)
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 7 of 8
2SK3147(L), 2SK3147(S)
REJ03G1072-0300 Rev.3.00 Aug 17, 2009
Page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SK3147L-E 3200 pcs Box (Sack)
2SK3147STL-E 3000 pcs Taping
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
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have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
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http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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Tel: <603> 7955-9390, Fax: <603> 7955-9510
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© 2009. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.2
