©2004 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B1
HGTG30N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Dio de
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar trans istors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Symbol
Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
•Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging JEDEC STYL E T O- 247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG30N60A4D TO-247 30N60A4D
NOTE: When ordering, use the entire part number.
C
E
G
COLLECTOR
(FLANGE)
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet September 2004
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©2004 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG30N60A4D, UNITS
Collect o r to Em itter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 75 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 60 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 240 A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD463 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7 W/oC
Operating and Storage Junction Temper ature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
CAUTION: S tresses ab ove those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 µA
TJ = 125oC--2.8mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 30A,
VGE = 15V TJ = 25oC-1.82.6V
TJ = 125oC-1.62.0V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 4.5 5.2 7.0 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 100µH, VCE = 600V 150 - - A
Gate to Emitter Plateau Voltage VGEP IC = 30A, VCE = 300V - 8.5 - V
On-State Gate Charge Qg(ON) IC = 30A,
VCE = 300V VGE = 15V - 225 270 nC
VGE = 20V - 300 360 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC,
ICE = 30A,
VCE = 390V,
VGE = 15V,
RG = 3Ω,
L = 200µH,
Test Circuit (Figure 24)
-25- ns
Current Rise Time trI -12- ns
Current Turn-Off Delay Time td(OFF)I - 150 - ns
Current Fall Time tfI -38- ns
Turn-On Energy (Note 2) EON1 - 280 - µJ
Turn-On Energy (Note 2) EON2 - 600 - µJ
Turn-Off Energy (Note 3) EOFF - 240 350 µJ
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC,
ICE = 30A,
VCE = 390V, VGE = 15V,
RG = 3Ω,
L = 200µH,
Test Circuit (Figure 24)
-24- ns
Current Rise Time trI -11- ns
Current Turn-Off Delay Time td(OFF)I - 180 200 ns
Current Fall Time tfI -5870ns
Turn-On Energy (Note 2) EON1 - 280 - µJ
Turn-On Energy (Note 2) EON2 - 1000 1200 µJ
Turn-Off Energy (Note 3) EOFF - 450 750 µJ
Diode Forward Voltage VEC IEC = 30A - 2.2 2.5 V
Diode Reverse Recovery Time trr IEC = 30A, dIEC/dt = 200A/µs - 40 55 ns
IEC = 1A, dIEC/ dt = 200A/µs - 30 42 ns
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Thermal Resistance Junction To Case RθJC IGBT - - 0.27 oC/W
Diode - - 0.65 oC/W
NOTES:
2. Values fo r two Turn-On loss condi tions ar e shown fo r the con v enie nce of the circuit d esigner. EON1 is the turn-on loss of the IGBT onl y. EON2
is the t urn-on loss when a typical diode is used in the test circui t and the dio de is at the same TJ as the IGBT. The diode type is specified in
Figure 2 4.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
10
0
40
20
30
25 75 100 125 150
60
60
VGE = 15V
70
50
VCE, COLLECTOR TO EMITTER VOLTA GE (V) 7000
ICE, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
100
150
50
200 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 500µH
TCVGE
15V
75oC
fMAX, OPERATING FREQUENCY (kHz)
3
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
300
6010 30
500
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.27oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TJ = 125oC, RG = 3Ω, L = 200µH, VCE = 390V
100
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 15
10
16
300
500
900
tSC
ISC
800
13 14
4
6
8
12
14
18
200
400
600
700
VCE = 390V, RG = 3Ω, TJ = 125oC
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FIGURE 5. COLLE CTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLE CTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLE CTO R T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (C ontinue d)
01.0
VCE, COLLECTOR TO EMITTER VOLTA GE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
1.5 2.0 2.5
40
30
TJ = 150oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 12V
50
TJ = 25oC
0.5
TJ = 125oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TJ = 150oCTJ = 25oC
TJ = 125oC
0
10
20
40
30
50
0 1.0 1.5 2.0 2.50.5
EON2, TURN-ON ENERGY LOSS (µJ)
1000
ICE, COLLECTOR TO EMITTER CURRENT (A)
500
1500
0
3500
10 20 30 40 50 60
TJ = 125oC, VGE = 12V, VGE = 15V
RG = 3Ω, L = 200µH, VCE = 390V
TJ = 25oC, VGE = 12V, VGE = 15V
0
2500
2000
3000
1000
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (µJ)
0
600
200
800
1200
1400
TJ = 25oC, VGE = 12V OR 15V
TJ = 125oC, VGE = 12V OR 15V
400
RG = 3Ω, L = 200 µH, VCE = 390V
10 20 30 40 50 600
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
20
22
24
26
28
34
10 20 30 40 50 600
TJ = 25oC, TJ = 125oC, V GE = 15V
TJ = 25oC, TJ = 125oC, VGE = 12V
RG = 3Ω, L = 200µH, VCE = 390V
32
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
0
40
20
100
80
60
RG = 3Ω, L = 200µH, VCE = 390V
TJ = 125oC, VGE = 15V, VGE = 12V
2010 30 40 50 600
TJ = 25oC, VGE = 12V
TJ = 25oC, VGE = 15V
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©2004 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B1
FIGURE 11. TURN-OFF DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 12. FALL TIME vs COLL ECT OR T O EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. T O TAL SWITCHING LOSS vs CASE
TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (C ontinue d)
160
120
140
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
220
200
180
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 125oC
RG = 3Ω, L = 200µH, VCE = 390V
2010 30 40 50 600
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
20
30
40
RG = 3Ω, L = 200µH, VCE = 390V
TJ = 25oC, VGE = 12V OR 15V
50
70
2010 30 40 50 600
TJ = 125oC, VGE = 12V OR 15V
60
ICE, COLLECTO R TO EMITTER CURRENT (A)
0
50
100
78910 12
VGE, GATE TO EMITTER VOLTAGE (V)
11
150
300
350
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
TJ = 125oC
TJ = -55oC
250
200
TJ = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
2.5
12.5
0
7.5
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
VCE = 200V
5.0
10.0
15.0
VCE = 600V
50 100 150 200 2500
VCE = 400V
ICE = 15A
0
2
50 75 100
TC, CASE TEMPERATURE (oC)
3
12525 150
5
ETOTAL, TO TAL SWITCHING ENERGY LOSS (mJ)
RG = 3Ω, L = 200µH, VCE = 390V, VGE = 15V
4
ICE = 60A
ICE = 30A
1
ETOTAL = EON2 + EOFF
010 100
RG, GATE RESISTANCE (Ω)
16
3 300
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
20 TJ = 125oC, L = 200µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 15A
ICE = 30A
ICE = 60A
12
8
4
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©2004 Fairchild Semiconductor Corporation HGTG30N60A4D Rev. B1
FIGURE 17. CAPACITANCE vs COLL ECT OR T O EMI TTER
VOLTAGE FIGURE 18. COLLECT OR T O EMITTER ON- STA T E V OL TAGE
vs GATE TO EMITTER V OLTAGE
FIGURE 19. DIODE FOR W ARD CURRENT vs FOR WARD
VOLTAGE DR OP FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVER Y TI MES vs RATE OF CHANGE OF
CURRENT FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CRES
0 5 10 15 20 25
0
2
6
8
10
4
FREQUENCY = 1MHz
COES
CIES
VGE, GATE TO EMITTER VOLTAGE (V)
9
1.7 12
1.8
2.0
1.9
11 13 14 15 16
2.1
2.3
VCE, COLLECTO R TO EMITTER VOLTAGE (V)
ICE = 60A
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
ICE = 30A
ICE = 15A
2.2
10
0.5 1.0 1.5 2.5
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
02.0
0
10
15
20
25 25oC
125oC
5
35
30 PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,
60
40
20
0
trr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
03020
70
50
30
10
10 15 25
80
100
25oC trr
25oC ta
25oC tb
125oC tb
125oC ta
dIEC/dt = 200A/µs125oC trr
5
90
300 400 500 700 800
trr, RECOVERY TIMES (ns)
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
200 600
10
0
20
30
40
50
60
900 1000
125oC ta
125oC tb25oC ta
25oC tb
IEC = 30A, VCE = 390V
1000
600
200
0
Qrr, REVERSE RECOVERY CHARGE (nC)
dIEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000500
1200
800
400
200 300 400 900
1400
600 700 800
125oC, IEC = 30A
125oC, IEC = 15A
25oC, IEC = 15A
25oC, IEC = 30A
VCE = 390V
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FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continued)
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPO NSE
10-2
10-1
100
10-5 10-3 10-2 10-1 100101
10-4
0.10
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 25. SWITCHING TEST WAVEFORMS
RG = 3Ω
L = 200µH
VDD = 390V
+
-
DUT
HGTP30N60A4D
DIODE TA49373
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
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Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the hand ler’s b ody capacitan ce is not di scharged thro ugh the
de v ic e . With proper han dling and appli cat io n proce dur es,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assem b ly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.
5. Gate Volta ge Rating - Nev er e xc eed the gate- voltag e
rating of VGEM. Exceeding the ra ted VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of thes e de vice s are
essentially capacitors. Circuits that leave the gate open-
circuit ed or floating shoul d be a v oide d. Thes e condi tions
can resu lt i n turn-on of th e device due to volta ge bui ld up
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the inf o rmatio n shown fo r a typical unit in Fi gures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined b y fMAX2 = (PD - P C)/(EOFF + EON2). T he
allowab le dissipation (PD) is defined by PD=(T
JM -T
C)/RθJC.
The sum of device switching and con duc ti on lo sses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the condu cti on lo sse s (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. EON2 is the integ r al of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integr al of the instan tan eou s po wer loss
(ICE xV
CE) during turn-off . All tai l los se s are incl ude d in the
calculation for EOFF; i.e., the col lect or curr ent equals zero
(ICE = 0).
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
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be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ISOPLANAR™
LittleFET™
MICROCOUPLER™
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MicroPak™
MICROWIRE™
MSX™
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POP™
FAST
FASTr™
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GlobalOptoisolator™
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Rev. I11
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QS™
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µSerDes™
SILENT SWITCHER
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TruTranslation™
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VCX™
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