SD400R16PC - Vishay Presicion Group

Document Number: 93548 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 17-Apr-08 1

Standard Recovery Diodes

(Stud Version), 400 A

SD400N/R Series

Vishay High Power Products

FEATURES

• Wide current range

• High voltage ratings up to 2400 V

• High surge current capabilities

• Stud cathode and stud anode version

• Standard JEDEC types

• Compression bonded encapsulations

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Converters

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

ELECTRICAL SPECIFICATIONS

PRODUCT SUMMARY

IF(AV) 400 A

DO-205AB (DO-9)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

IF(AV)

480 A

TC120 °C

IF(RMS) 630

IFSM

50 Hz 8250

60 Hz 8640

I2t50 Hz 340 kA2s

60 Hz 311

VRRM Range 1600 to 2400 V

TJ- 40 to 190 °C

VOLTAGE RATINGS

TYPE NUMBER VOLTAGE

CODE

VRRM, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

VRSM, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

IRRM MAXIMUM

AT TJ = TJ MAXIMUM

SD400N/R

16 1600 1700

1520 2000 2100

24 2400 2500

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93548

2Revision: 17-Apr-08

SD400N/R Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 400 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current

at case temperature IF(AV) 180° conduction, half sine wave

400 A

120 °C

480 A

100 °C

Maximum RMS forward current IF(RMS) DC at 110 °C case temperature 630

Maximum peak, one-cycle forward,

non-repetitive surge current IFSM

t = 10 ms No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

8250

t = 8.3 ms 8640

t = 10 ms 100 % VRRM

reapplied

6940

t = 8.3 ms 7270

Maximum I2t for fusing I2t

t = 10 ms No voltage

reapplied

340

kA2s

t = 8.3 ms 311

t = 10 ms 100 % VRRM

reapplied

241

t = 8.3 ms 220

Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3400 kA2√s

Low level value of threshold voltage VF(TO)1

(16.7 % x π x IF(AV) < I < π x IF(AV)),

TJ = TJ maximum 0.80 V

High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.85

Low level value of forward

slope resistance rf1

(16.7 % x π x IF(AV) < I < π x IF(AV)),

TJ = TJ maximum 0.55

mΩ

High level value of forward

slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.51

Maximum forward voltage drop VFM

Ipk = 1500 A, TJ = TJ maximum,

tp = 10 ms sinusoidal wave 1.62 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating

temperature range TJ- 40 to 190 °C

Maximum storage temperature range TStg - 55 to 200

Maximum thermal resistance,

junction to case RthJC DC operation 0.11

K/W

Maximum thermal resistance,

case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04

Maximum allowed

mounting torque ± 10 % Not-lubricated threads 27 Nm

Approximate weight 250 g

Case style See dimensions (link at the end of datasheet) DO-205AB (DO-9)

Document Number: 93548 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 17-Apr-08 3

SD400N/R Series

Standard Recovery Diodes

(Stud Version), 400 A Vishay High Power Products

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - Forward Power Loss Characteristics

ΔRthJC CONDUCTION

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.020 0.013

TJ = TJ maximum K/W

120° 0.023 0.023

90° 0.029 0.031

60° 0.042 0.044

30° 0.073 0.074

110

120

130

140

150

160

170

180

190

0 50 100 150 200 250 300 350 400 450

30° 60° 90° 120°

180°

Average Forward Current (A)

Conduction Angle

Maximum Allowable Case Temperature (°C)

SD 4 0 0 N / R Se r i e s

R (DC) = 0.11 K/ W

thJC

100

110

120

130

140

150

160

170

180

190

0 100 200 300 400 500 600 700

30°

60°

90°

120°

180°

Conduction Period

Maximum Allowable Case Temperature (°C)

Average Forward Current (A)

SD 4 0 0 N / R Se r i e s

R (DC) = 0.11 K/ W

thJC

10 30 50 70 90 110 130 150 170 190

Maximum Allowable Ambient Temperature (°C)

0.2K

0.3K/W

0.4K/W

0.6K

R=0.04K/W-DeltaR

thS

0.1K/W

1.8K/W

100

150

200

250

300

350

400

450

500

550

50 100 150 200 250 300 350 400

180°

120°

90°

60°

30° RM S Li m i t

Conduction Angle

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

SD 4 0 0 N / R Se r i e s

T = 1 9 0 ° C

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93548

4Revision: 17-Apr-08

SD400N/R Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 400 A

Fig. 4 - Forward Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - Forward Voltage Drop Characteristics

10 30 50 70 90 110 130 150 170 190

Maximum Allowable Ambient Temperature (°C)

0.2K

0.3K/W

0.4K/W

0.6K

R=0.04K/W-DeltaR

thS

0.1K/W

1.8K

100

200

300

400

500

600

700

800

0 100 200 300 400 500 600 700

180°

120°

90°

60°

30°

RM S Li m it

Conduction Period

Maximum Average Forward Power Loss (W)

Average Forward Current (A)

SD 4 0 0 N / R Se r i e s

T = 190°C

2000

3000

4000

5000

6000

7000

8000

110100

Numb e r Of Eq ua l Amp litud e Half Cyc le Current Pulse s (N)

Peak Half Sine Wave Forward Current (A)

SD 4 0 0 N / R Se r i e s

Init ia l T = 190°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

1000

2000

3000

4000

5000

6000

7000

8000

9000

0.01 0.1 1

Pulse Tra in Du ra t io n (s)

Peak Half Sine Wave Forward Current (A)

Versus Pulse Train Duration.

Maximum Non Repetitive Surge Current

Init ia l T = 190°C

No Volta g e Reap plied

Rated V Reapplied

RRM

SD 4 0 0 N / R Se r i e s

100

1000

10000

0.5 1 1.5 2 2.5

T = 2 5 ° C

In st a n t a n e o u s Fo r w a r d V o l t a g e ( V )

Instantaneous Forward Current (A)

SD 4 0 0 N / R Se r i e s

T = 1 9 0 ° C

Document Number: 93548 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 17-Apr-08 5

SD400N/R Series

Standard Recovery Diodes

(Stud Version), 400 A Vishay High Power Products

Fig. 8 - Thermal Impedance ZthJC Characteristic

ORDERING INFORMATION TABLE

0.001

0.01

0.1

0.001 0.01 0.1 1 10

Sq u a r e W a v e Pu l se D u r a t i o n ( s)

thJC

Transient Thermal Impedance Z (K/ W)

SD 4 0 0 N / R Se r i e s

St e a d y St a t e V a l u e :

R = 0.11 K/ W

(DC Operation)

thJC

Device code

51324

SD 40 0 N 24 P C

1- Diode

2- Essential part number

3- 0 = Standard recovery

4- N = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

5- Voltage code x 100 = VRRM (see Voltage Ratings table)

6-P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A

7- C = Ceramic housing

For metric device M16 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95301

Document Number: 95301 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 09-Apr-08 1

DO-205AB (DO-9)

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

Ceramic housing 19 (0.75)

MAX.

4 (0.16)

MAX.

DIA. 8.5 (0.33) NOM.

DIA. 27.5

(1.08) MAX.

16 (0.63)

MAX.

SW 32

*For metric device: M16 x 1.5

contact factory

C.S. 35 mm2

(0.054 s.i.)

210 (8.27)

± 10 (0.39)

82 (3.23)

MIN.

21 (0.82)

MAX.

3/4"-16UNF-2A*

9.5 (0.37) MIN.

39 (1.53)

MAX.

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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