BL Galaxy Electrical Production specification
PNP General Purpose Transistor MMBT5401
Document number: BL/SSSTC075 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction. Pb
Lead-free
z Complementary NPN type available
(MMBT5551).
z Also available in lead free version.
APPLICATIONS
z Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBT5401 2L SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
VCBO collector-base voltage -160 V
VCEO collector-emitter voltage -150 V
VEBO emitter-base voltage -5 V
ICcollector current (DC) -0.6 A
PCCollector dissipation 0.3 W
Tj ,Tstg junction and storage temperature -55-150 °C
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter Test conditions MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0 -160
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0 B-150
V(BR)EBO Emitter-base breakdown voltage IE=-10μA,IC=0 -5
ICBO collector cut-off current IE = 0; VCB = -120V - -0.1 μA
IEBO emitter cut-off current IC = 0; VEB = -4V - -0.1 μA
hFE DC current gain
VCE = -5V; IC= -1mA
VCE = -5V;IC = -10mA
VCE = -5V;IC = -50 mA
50
60
50
-
250
-
VCE(sat) collector-emitter saturation voltage IC = -50 mA; IB = -5 mA B- -0.5 V
VBE(sat) base-emitter saturation voltage IC = -50 mA; IB = -5 mA B- -1 V
fTtransition frequency IC = -10mA; VCE = -5V;
f = 30MHz 100 - MHz