VS-30BQ100HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3 A FEATURES * Low forward voltage drop Cathode * Guard ring for enhanced ruggedness and long term reliability Anode * Small foot print, surface mountable * High frequency operation * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AB (SMC) * Meets JESD 201 class 2 whisker test PRODUCT SUMMARY * AEC-Q101 qualified Package DO-214AB (SMC) IF(AV) 3.0 A VR 100 V VF at IF 0.62 V IRM 5 mA at 125 C TJ max. 175 C Diode variation Single die EAS 3.0 mJ * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The VS-30BQ100HM3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 s sine VF 3.0 Apk, TJ = 125 C TJ Range VALUES UNITS 3.0 A 100 V 800 A 0.62 V -55 to +175 C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-30BQ100HM3 UNITS 100 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TL = 148 C, rectangular waveform 3.0 50 % duty cycle at TL = 138 C, rectangular waveform 4.0 5 s sine or 3 s rect. pulse Following any rated load condition and with rated VRRM applied 800 UNITS A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 C, IAS = 1.0 A, L = 6 mH 3.0 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse 70 Revision: 17-Dec-14 Document Number: 94832 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ100HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop VFM (1) TJ = 25 C 6A 3A TJ = 125 C 6A TJ = 25 C VR = Rated VR VALUES UNITS 0.79 0.90 V 0.62 0.70 0.5 mA Maximum reverse leakage current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 C 115 pF Typical series inductance LS Measured lead to lead 5 mm from package body 3.0 nH 10 000 V/s VALUES UNITS -55 to +175 C Maximum voltage rate of change dV/dt TJ = 125 C Rated VR 5.0 Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS 12 DC operation 0.24 Approximate weight Marking device C/W 46 g 0.008 Case style SMC (similar to DO-214AB) oz. 3J Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 17-Dec-14 Document Number: 94832 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ100HM3 Vishay Semiconductors 10 10 1 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 C TJ = 125 C TJ = 25 C 0.1 TJ = 175 C 1 TJ = 150 C TJ = 125 C 0.1 TJ = 100 C 0.01 TJ = 75 C 0.001 TJ = 50 C 0.0001 TJ = 25C 0.00001 0 0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 100 TJ = 25 C 10 0 20 40 60 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 10 PDM t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 17-Dec-14 Document Number: 94832 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ100HM3 Vishay Semiconductors 180 2.5 Average Power Loss (W) Allowable Lead Temperature (C) www.vishay.com 160 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 140 Square wave (D = 0.50) 80% rated Vr applied 120 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 2.0 1.5 RMS limit 1.0 DC 0.5 See note (1) 100 0 0 1 2 3 4 0 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 17-Dec-14 Document Number: 94832 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ100HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 B Q 100 H M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - B = SMC 4 - Q = Schottky "Q" series 5 - Voltage rating (100 = 100 V) 6 - H = AEC-Q101 qualified 7 - Environmental digit: M3 = halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-30BQ100HM3/9AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 17-Dec-14 Document Number: 94832 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMC DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 95402 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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