A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 16 V
BVCBO IC = 5.0 mA 36 V
BVCES IC = 5.0 mA 36 V
BVEBO IE = 1.0 mA 4.0 V
ICES VCE = 15 V 5.0 mA
hFE VCE = 5.0 V IC = 250 mA 30 200 ---
CCB VCB = 10 V f = 1.0 MHz 12 20 pF
GPE
η
ηη
η
ψ
ψψ
ψ
VCE = 12 V POUT = 1.5 W f = 175 MHz 11.5
50
10:1
13
60 dB
%
---
NPN SILICON RF TRANSISTOR
MRF553
DESCRIPTION:
The ASI MRF553 is designed f or
Low power amplifier applications.
FEATURES:
• 12.5 V, 175 MHz.
• POUT = 1.5 W
• GP = 11.5 min.
• η = 60 % (Typ)
MAXIMUM RATINGS
IC 500 mA
VCB 36 V
PDISS 3.0 W @ TC = 75 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 41.7 °C/W
PACKAGE STYLE
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 4.45 5.21 .175 .205
B 1.91 2.54 .075 .100
C 0.84 0.99 .033 .039
D 2.46 2.64 .097 .104
E 8.84 9.73 .348 .383
F 0.20 0.31 .008 0.12
G 7.24 8.13 .285 .320
H 1.65 0.65
J 3.25 0.128
K 0.64 1.02 .025 0.40
1 = COLLECTOR
2 = EMITTER
3 = BASE
4 = EMITTER
