SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A
* 1 Amp continuous current
COMPLEMENTARY TYPES FMMT549 - FMMT449
FMMT549A - N/A
PARTMARKING DETAIL FMMT549 - 549
FMMT549A - 59A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Base Current IB-200 mA
Power Dissipation: at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO -35 V IC
=-100µA
V(BR)CEO -30 V IC
=-10mA*
V(BR)EBO -5 V IE=-100µA
Cut-Off Currents ICBO -0.1
-10 µA
µA
VCB
=-30V
VCB
=-30V, Tamb
=100°C
IEBO -0.1 µAVEB
=-4V
Saturation Voltages VCE(sat) -0.25
-0.50
-0.50
-0.75
V
V
IC
=-1A, IB
=-100mA*
IC
=-2A, IB
=-200mA*
FMMT549A -0.30 V IC
=-100mA, IB
=-1mA*
VBE(sat) -0.9 -1.25 V IC
=-1A, IB
=-100mA*
Base Emitter Turn-on Voltage VBE(on) -0.85 -1 V IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE 70
80
40
200
130
80
IC
=-50mA, VCE=-2V*
IC
=-1A, VCE=-2V*
IC
=-2A, VCE=-2V*
FMMT549 100 160 300 IC
=-500mA, VCE=-2V*
FMMT549A 150 200 500 IC
=-500mA, VCE=-2V*
Transition Frequency fT100 MHz IC
=-100mA, VCE=-5V
f=100MHz
Output Capacitance Cobo 25 pF VCB
=-10V, f=1MHz
Switching Times ton 50 ns IC
=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 300 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT549
FMMT549A
C
B
E
3 - 127
FMMT549
FMMT549A
3 - 128
0.1 1
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Gain
V - (Volts)
V- (Volts)
I
B1
=I
B2
=I
C
/10
Single Pulse Test at T
amb
=25°C
0.7
0.8
0.9
1.0
0.01
0.001 0.01 10
0.1 1
40
80
120
160
200
0.01 10
0.1 1
I
C
/I
B
=100
0.001 0.01 0.1 1
I
C
/I
B
=10
0.01 0.1 10
1
I
C
/I
B
=100
0.6
V
CE
=2V
I
C
/I
B
=10
I
C
/I
B
=10
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
0
100
80
60
40
0
20
160
140
120
td,tr,tf
(ns)
180
1000
800
600
400
0
200
1600
1400
1200
ts
(ns)
1800
tr
ts
tf
td
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0.01
0.1
10
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* Low equivalent on-resistance; RCE(sat) 250mΩ at 1A
* 1 Amp continuous current
COMPLEMENTARY TYPES FMMT549 - FMMT449
FMMT549A - N/A
PARTMARKING DETAIL FMMT549 - 549
FMMT549A - 59A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Base Current IB-200 mA
Power Dissipation: at Tamb
=25°C Ptot 500 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO -35 V IC
=-100µA
V(BR)CEO -30 V IC
=-10mA*
V(BR)EBO -5 V IE=-100µA
Cut-Off Currents ICBO -0.1
-10 µA
µA
VCB
=-30V
VCB
=-30V, Tamb
=100°C
IEBO -0.1 µAVEB
=-4V
Saturation Voltages VCE(sat) -0.25
-0.50
-0.50
-0.75
V
V
IC
=-1A, IB
=-100mA*
IC
=-2A, IB
=-200mA*
FMMT549A -0.30 V IC
=-100mA, IB
=-1mA*
VBE(sat) -0.9 -1.25 V IC
=-1A, IB
=-100mA*
Base Emitter Turn-on Voltage VBE(on) -0.85 -1 V IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE 70
80
40
200
130
80
IC
=-50mA, VCE=-2V*
IC
=-1A, VCE=-2V*
IC
=-2A, VCE=-2V*
FMMT549 100 160 300 IC
=-500mA, VCE=-2V*
FMMT549A 150 200 500 IC
=-500mA, VCE=-2V*
Transition Frequency fT100 MHz IC
=-100mA, VCE=-5V
f=100MHz
Output Capacitance Cobo 25 pF VCB
=-10V, f=1MHz
Switching Times ton 50 ns IC
=-500mA, VCC
=-10V
IB1=IB2=-50mA
toff 300 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT549
FMMT549A
C
B
E
3 - 127
FMMT549
FMMT549A
3 - 128
0.1 1
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V- (Volts)
Switching Speeds
I
C
- Collector Current (Amps)
Switching time
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Gain
V - (Volts)
V- (Volts)
I
B1
=I
B2
=I
C
/10
Single Pulse Test at T
amb
=25°C
0.7
0.8
0.9
1.0
0.01
0.001 0.01 10
0.1 1
40
80
120
160
200
0.01 10
0.1 1
I
C
/I
B
=100
0.001 0.01 0.1 1
I
C
/I
B
=10
0.01 0.1 10
1
I
C
/I
B
=100
0.6
V
CE
=2V
I
C
/I
B
=10
I
C
/I
B
=10
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
0
100
80
60
40
0
20
160
140
120
td,tr,tf
(ns)
180
1000
800
600
400
0
200
1600
1400
1200
ts
(ns)
1800
tr
ts
tf
td
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10 100
1s
DC
100ms
10ms
100
µ
s
1ms
1
0.01
0.1
10
