CD4148WT
Crownpo Technology
www.crownpo.com
01-Dec-03
Document No. 32002
Small-Signal Chip Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode.
• This diode is also available in other case styles
including the 1206 case with the type designation
CD4148W,
Mechanical Data
Case: 0603
Weight: approx. 4 mg
Marking: Cathode arrow
1) Valid provided that electrodes are kept at ambient temperature.
Unit
Reverse voltage V
R
75 V
Peak reverse voltage V
RM
100 V
Average rectified current half wave rectification with resistive
load f
M 50 Hz I
F(AV)
150
1)
mA
Surge current t < 1 s and T
j
= 25
-
CI
FSM
350 mA
Power dissipation P
tot
200
1)
mW
Thermal resistance junction to ambient air Rθ
JA
650
1)
-
C/W
Junction temperature T
j
150
-
C
Storage temperature T
S
- 65 to + 175
-
C
Parameter Symbol Value
the 0805 case with the type
designation CD4148WS
Mounting Pad Layout
0603
Dimensions in inches and (millimeters)
.018 (.45)
.010 (.25)
.034 (.75)
.026 (.55)
.071 (1.65)
.059 (1.45)
.039 (0.9)
.027 (0.7)
.039 (0.99)
Typ.
.034(0.86)
Typ.
.020(.508)
Typ.
Absolute Maximum Ratings &
T
amb
= 25
-
C, unless otherwise specified
Thermal Characteristics
CD4148WT
Crownpo Technology
www.crownpo.com
01-Dec-03
Document No. 32002
Electrical Characteristics
Tamb = 25
-
C, unless otherwise specified
Typical Characteristics
(T
amb
= 25 °C unless otherwise specified)
Max
Forward voltage IF = 10 mA VF1.0 V
Leakage current
VR = 20 V 25 nA
VR = 75 V IR5.0 eA
VR = 20 V, TJ = 150 -C50eA
Capacitance VF = VR = 0 V 4 pF
Reverse recovery time IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 qtrr 4ns
Rectification efficiency f = 100 MHz, VRF = 2 V 0.45
Unit
Parameter Symbol Min
Figure 1. Forward Characteristics Figure 2. Dynamic Forward Resistance
vs. Forward Current
Voltage rise when switching ON tested with 50 mA pulses,
t
p = 0.1 es, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr 2.5 ns
Ctot
Rectification Efficiency Measurement Circuit
CD4148WT
Crownpo Technology
www.crownpo.com
01-Dec-03
Document No. 32002
Figure 3. Admissible Power Dissipation
vs. Ambient Temperature
Figure 5. Leakage Current vs.
Junction Temperature
Figure 4. Relative Capacitance vs.
Reverse Voltage
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
