MMBT3906-G (PNP)
RoHS Device
QW-BTR02 Page 1
REV:B
Symbol
Parameter Conditions Min
Max
Unit
O
Typ
VCEO
Emitter-Base voltage
Collector-Emitter voltage
Collector-Base voltage
Collector current-Continuous
Symbol
Parameter Min
Max
Unit
V
V
V
-5
-40
-40
IC-0.2 A
0.2 W
PC
Collector dissipatioin
+150 OC
TSTG , TJ
Storage temperature and junction temperature -55
Collector-Base breakdown voltage
-0.1
IC =-100μA , IE=0
Features
-Epitaxial planar die construction
-As complementary type, the NPN
transistor MMBT3904-G is recommended
Dimensions in inches and (millimeter)
SOT-23
0.071 (1.80)
1 2
3
0.119 (3.00)
0.110 (2.80)
0.100 (2.55)
0.089 (2.25)
0.020 (0.50)
0.012 (0.30)
0.056 (1.40)
0.047 (1.20)
0.041 (1.05)
0.035 (0.90)
0.079 (2.00)
0.004 (0.10) max
0.006 (0.15)
0.003 (0.08)
1
Base
2
Emitter
Collector
3
VCBO
VEBO
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Transition frequency
Delay time
Storage time
Rise time
Fall time
IC =-1mA , IB=0
IE =-100μA , IC=0
VCB=-40V , IE=0
VCE=-40V , IB=0
VEB=-5V , IC=0
VCE=-1V , IC=-10mA
VCE=-1V , IC=-50mA
IC=-50mA , IB=-5mA
IC=-50mA , IB=-5mA
VCE=-20V , IC=-10mA
f=100MHZ
VCC=-3.0V , VBE=-0.5V
IC=-10mA , IB1=-1.0mA
VCC=-3.0Vdc , IC=-10mA
IB1=IB2=-1.0mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
-40
-40
-5
-0.1
-0.1
300
100
60
-0.4
-0.95
300
35
35
225
75
V
V
V
µA
µA
µA
V
V
Mhz
nS
nS
nS
nS
VCE=-1V , IC=-100mA hFE(3) 30
0.020 (0.50)
0.012 (0.30)
General Purpose Transistor
Maximum Ratings (at TA=25°C unless otherwise noted)
Electrical Characteristics (at TA=25°C unless otherwise noted)
RATING AND CHARACTERISTIC CURVES (MMBT3906-G)
Page 2
QW-BTR02
REV:B
Fig.5 - IC — VBE
Base - Emmiter Voltage , VBE (V)
Ta=100°C
Collector Current , Ic (mA)
DC Current Gain, hFE
-0.1 -1 -10 -100
0
100
200
300
-200
Collector Current , Ic (mA)
1-10 -100
-30
100
-10
Fig.3 - VCEsat — IC
500
100
Fig.4 - VBEsat — IC
Collector Current, Ic (mA)
1 10
-0.4
200
-0.8
-1.2
-0.0
Fig.1 - Static Characteristic
COLLECTOR CURRENT, IC
(mA)
Collector-Emitter Voltage, VCE (V)
-500uA
-450uA
IB=-50uA
COMMON
EMITTER
Ta=25℃
-0
-20
-40
-60
-80
-90
-0 -4 -8 -12 -16 -18
-100uA
-150uA
-200uA
-250uA
-300uA
-350uA
-400uA
-450uA
-500uA
Ta=25°C
COMMON EMITTER
VCE=-1V
Fig.2 - hFE— IC
300
-30
ß=10
-20
Reverse Voltage , V (V)
-0.1 -1 -10
1
Capacitance, c (pF)
Fig.6 - Cob/Cib — VCB/VEB
9
-3
F=1MHz
Ta=25°C
IE=0 / Ic=0
Cob
Cib
-0.0 -0.2 -0.6 -100
-0.4 -0.8
-0.3
-0.1
-1
-3
-10
-30
-100
Ta=100°C
Ta=25°C
Collector Current, Ic (mA) Collector-Emtter Saturation Voltage
, (mV)
VCEsat
BASE-Emitter Saturation Voltage,
, (V)
VBEsat
General Purpose Transistor
Page 3
QW-BTR02
REV:B
Fig.7 - fT — IC
Transition Frequency , fT (MHZ)
Collector current, Ic (mA)
-1 -10
-50
200
600
Fig.8 - PC — Ta
Ambient Temperature , Ta (°C)
Collector Power Dissipation, Pc (mW)
0 25 50 75 100 125 150
0
50
100
150
200
250
300
400
-3
VCE=-20V
Ta=25°C
-30
RATING AND CHARACTERISTIC CURVES (MMBT3906-G)
General Purpose Transistor
Comchip Technology CO., LTD.
Page 4
REV:B
QW-BTR02
B C dD D2D1
SOT-23
SYMBOL
A
(mm)
(inch) 2.142 ± 0.016
4.00 ± 0.10
1.50 + 0.10 54.40 ± 0.40 13.00 ± 0.20
4.00 ± 0.10 2.00 ± 0.10
178 ± 1.00
0.059 0.004+7.008 ± 0.039 0.512 ± 0.008
SYMBOL
(mm)
(inch) 0. ± 0.004157 0.157 ± 0.004 0.079 ± 0.004
E F P P0P1W W1
1.75 ± 0.10
0.069 ± 0.004
3.50 ± 0.05
0.138 ± 0.002
SOT-23
3.15 ± 0.10
0.124 ± 0.004
2.77 ± 0.10
0.109 ± 0.004
1.22 ± 0.10
0.048 ± 0.004
9.50 ± 1.00
0.374 ± 0.039
8.00 0.30 /+–0.10
0.315 0.012 /+–0.004
General Purpose Transistor
Reel Taping Specification
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
D1
D2
D
W1
T
C
Direction of Feed
Index hole
d
E
F
B W
P
P0
P1
A
Suggested PAD Layout
Part Number
MMBT3906-G
Marking Code
2A
Marking Code
Comchip Technology CO., LTD.
Page 5
REV:B
A
C
B
SIZE
(inch)
0.031
(mm)
0.80
1.90
2.02
0.075
0.080
SOT-23
2.82 0.111
A
B
C
D
D
QW-BTR02
2A
3
1 2
Marking
Code
X
Code Year(Even)-Month
XXX1-01
XXX1-02
XXX1-03
XXX1-04
XXX1-05
XXX1-06
XXX1-07
XXX1-08
XXX1-09
XXX1-010
XXX1-011
XXX1-012
XXX2-01
XXX2-02
XXX2-03
XXX2-04
XXX2-05
XXX2-06
XXX2-07
XXX2-08
XXX2-09
XXX2-010
XXX2-011
XXX2-012
Code
J
O
L
C
K
B
P
D
M
E
G
F
W
N
Y
T
R
H
A
I
U
X
Z
S
Year(odd)-Month
Code: Per A.D.
General Purpose Transistor
Standard Packaging
Case Type
SOT-23 3,000
REEL
( pcs )
Reel Size
(inch)
7
REEL PACK
