© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-51 12 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 1
CM3202
PRELIMINARY
Features
Two linear regulators
-Maximum 2A current from VDDQ
-Source and sink up to 2A VTT current
1.7V to 2.8V adjustable VDDQ output voltage
500mV typical VDDQ dropout voltage at 2A
•V
TT tracking at 50% of VDDQ
Excellent load and line regulation, low noise
Fast transient response
Meet JEDEC DDR-I and DDR-II memory power spec.
Linear regulator design requires no inductors and has
low external component count
Integrated power MOSFETs
Dual purpose ADJ/Shutdown pin
Built-in over-current limit with short-circuit foldback and
thermal shutdown for VDDQ and VTT
Fast transient response
5mA quiescent current
TDFN-8 and SOIC-8 packages for high performance
thermal dissipation and easy PC board layout
Optional RoHS Compliant Lead-free packaging
Applications
DDR memory and active termination buses
Desktop Computers, Servers
Residential and Enterprise Gateways
DSL Modems
Routers and Switchers
DVD recorders
3D AGP cards
LCD TV and STB
Product Description
The CM3202 is a dual-output low noise linear regulator
designed to meet SSTL-2 and SSTL-3 specifications
for DDR-SDRAM VDDQ supply and termination voltage
VTT supply. With integrated power MOSFET’s, the
CM3202 can source up to 2A of VDDQ current, and
source or sink up to 2A VTT current. The typical drop-
out voltage for VDDQ is 500 mV at 2A load current.
The CM3202 provides fast response to transient load
changes. Load regulation is excellent, less than 1%,
from no load to full load. It also has built-in over-current
limits and thermal shutdown at 170°C.
The CM3202 is packaged in an easy-to-use TDFN-8
and SOIC-8. Low thermal resistance (55°C/W) allows it
to withstand 1.55W (1) dissipation at 85°C ambient. It
can operate over the industrial ambient temperature
range of –40°C to 85°C.
Note(1) :
If TDFN-8 is mounted on a double-sided printed circuit board with
two square inches of copper area, it can to withstand 2W dissipation
at 85°C ambient then.
Typical Application
1
3
2
DL0
VDDQ
Chip
Set
DLn
DDR
Memory
REF
845
887
VDDQ
RT0
RTn
220u
220u
3.3V
1.25V, 2.5A
S/D
1u
1k
4.7u
ADJSD
GND
VDDQ
VTT
VIN
CM3202
V
REF
GND
4
VIN VDDQ
8
6
7
5
220u 4.7u
4.7u
VTT
DDR V
DDQ
and Termination Voltage Regulator
© 2006 California Micro Devices Corp. All rights reserved.
2490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3202
PRELIMINARY
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
PACKAGE / PINOUT DIAGRAM
8-Lead TDFN Package
8-Lead SOIC Package
CM3202-00DE
1
2
3
4
8
7
6
5
VIN
VIN
VTT
GND
VDDQ
VDDQ
ADJSD
GND
TOP VIEW
GND
NC
3
2
1
4
321
567
PAD
5
6
7
8
8
Pin 1
Marking
TOP VIEW
Note: This drawing is not to scale.
4
V
TT
NC
V
IN
V
DDQ
ADJSD
GND
GND
CM3202-00SM
PART NUMBERING INFORMATION
Pins Package
Lead-free Finish
Ordering Part Number1Part Marking
8 TDFN CM3202-00DE CM3202
8 SOIC CM3202-00SM CM3202
ABSOLUTE MAXIMUM RATINGS
PARAMETER RATING UNITS
VIN to GND [GND - 0.3] to +6.0 V
Pin Voltages
VDDQ ,VTT to GND
ADJSD to GND
[GND - 0.3] to +6.0
[GND - 0.3] to +6.0
V
V
Storage Temperature Range -65 to +150 °C
Operating Temperature Range -40 to +85 °C
Lead Temperature (Soldering, 10s) 300 °C
Package Pinout
© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 3
CM3202
PRELIMINARY
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
VIN = 3.3V, typical values are at TA = 25°C (unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
S
VIN
VIN Supply Voltage Range 3 3.3 3.6 V
VUVLO Under-voltage Lockout All outputs are no load 2.5 V
UVLO Hysterisis 200 mV
IQQuiescent Current VDDQ = 0V, VTT = 0V,
ADJSD = 3.3V (shutdown)
200 mA
VDDQ = 2.5V, VTT = 1.25V, (no load) 5 mA
VDDQ Regulator
Output Current Limit VOUT = 2.5V 2.8 A
VREF Reference Voltage 1.235 1.250 1.265 V
IBIAS Input Bias Current (IADJ)VADJSD = V
REF 30 200 nA
VR LOAD Load Regulation IO = 10mA to 2A 1 %
VR LINE Line Regulation VIN = 3.15V to 3.5V, IO = 10mA 1 %
VDROPOUT Dropout Voltage VIN = 3.15V, IO = 2A 500 mV
VTT Regulator
Output Current Limit (Source) VOUT = 1.25V 2.8 A
Output Current Limit (Sink) VOUT = 1.25V 2.8 A
VR VTTLOAD Load Regulation IO = 0A to 2A 1 %
IO = 0A to -2A 1 %
Over Temperature Protection
Thermal Shutdown Temperature 170 °C
Thermal Shutdown Hysteresis 50 °C
Specifications (cont’d)
© 2006 California Micro Devices Corp. All rights reserved.
4490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3202
PRELIMINARY
VDDQ Dropout vs. IDDQ
IDDQ (A)
Dropout Voltage (mV)
VTT vs. VDDQ
0.75
0.85
0.95
1.05
1.15
1.25
1.35
1.45
1.55
1.65
1.5 1.75 2 2.25 2.5 2.75 3 3.25
VDDQ (V)
VTT (V)
Vin
VDDQ
VTT
1ms/div
1V/div
UVLO
Startup into Full Load
VDDQ vs.
Temperature
2.49
2.495
2.
5
2.505
2.51
-40 -20 0 20 40 60 80 10
0
12
0
14
0
Temperatur
e
o
C
VDDQ
(V)
VDDQ vs. Load Current
VDDQ (V)
IDDQ (A)
Ta=25 oC
Vin=3.3V
Ta=25 oC
Typical Operating Characteristics
© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 5
CM3202
PRELIMINARY
VIN = 3.3V
IOUT Step: -750mA ~ +750mA
esnopseRtneisnarTTTVesnopseRtneisnarTQDDV
VIN = 3.3V
IOUT Step: 15mA ~ 1.5A
VTT
IOUT
IOUT
VDDQ
With TDFN-8 Package
VDDQ Transient Respons esnopseRtneisnarTTTVe
VIN = 3.3V
IOUT Step: 15mA ~ 700mA
VTT
IOUT
VIN = 3.3V
IOUT Step: -350mA ~ +350mA
IOUT
VDDQ
With SOIC-8 Package
Typical Operating Characteristics (cont’d)
© 2006 California Micro Devices Corp. All rights reserved.
6490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3202
PRELIMINARY
Pin Descriptions
PIN DESCRIPTIONS
PIN(S)
TDFN 8
PIN(S)
SOIC 8 NAME DESCRIPTION
11, 2
VIN Input voltage pin, typically 3.3V from the silver box.
2, 4 NC
33
VTT VTT regulator output voltage pin, which is preset to 50% of VDDQ.
5, 6 4, 5 GND
Ground pin. The back tab is also ground and serves as the package
heatsink. It should be soldered to the circuit board copper to remove
excess heat from the IC.
7 6 ADJSD
This pin is for VDDQ output voltage Adjustment. The VDDQ output voltage is
set using an external resistor divider connected to ADJSD. The output
voltage is determined by the following formula
where R1 is the ground-side resistor and R2 is the upper resistor of the
divider. Connect these resistors to the VDDQ output at the point of
regulation.
In addition, functions as a Shutdown pin. Apply a voltage higher than VIN-
0.6V to this pin to simultaneously shutdown both VDDQ and VTT outputs.
The outputs are restored when the voltage is lowered below VIN-0.6V. A
low-leakage diode in series with the Shutdown signal is recommended to
avoid interference with the voltage adjustment setting.
87, 8
VDDQ VDDQ regulator output voltage pin.
VDDQ 1.25V R1 R2+
R1
---------------------
×=
Pin Description
© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 7
CM3202
PRELIMINARY
Application Information
Powering DDR Memory
Double-Data-Rate (DDR) memory has provided a huge
step in performance for personal computers, servers
and graphic systems. As is apparent in its name, DDR
operates at double the data rate of earlier RAM, with
two memory accesses per cycle versus one. DDR
SDRAM's transmit data at both the rising falling edges
of the memory bus clock.
DDR’s use of Stub Series Terminated Logic (SSTL)
topology improves noise immunity and power-supply
rejection, while reducing power dissipation. To achieve
this performance improvement, DDR requires more
complex power management architecture than previ-
ous RAM technology.
Unlike the conventional DRAM technology, DDR
SDRAM uses differential inputs and a reference volt-
age for all interface signals. This increases the data
bus bandwidth, and lowers the system power con-
sumption. Power consumption is reduced by lower
operating voltage, a lower signal voltage swing associ-
ated with Stub Series Terminated Logic (SSTL_2) and
by the use of a termination voltage, VTT
. SSTL_2 is an
industry standard, defined in JEDEC document
JESD8-9. SSTL_2 maintains high-speed data bus sig-
nal integrity by reducing transmission reflections.
JEDEC further defines the DDR SDRAM specification
in JESD79C.
DDR memory requires three tightly regulated voltages:
VDDQ, VTT
, and VREF (see Figure 1). In a typical
SSTL_2 receiver, the higher current VDDQ supply volt-
age is normally 2.5V with a tolerance of ±200-mV. The
active bus termination voltage, VTT
, is half of VDDQ.
VREF is a reference voltage that tracks half of VDDQ, ±
1%, and is compared with the VTT terminated signal at
the receiver. VTT must be within ±40-mV of VREF
.
9,1 9''4
1.22V
977
*1'
$'-6'
CM3202

9''4

9''4
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/LPLW
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/LPLW
&XUUHQW
/LPLW
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89/2
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Application Information (cont’d)
© 2006 California Micro Devices Corp. All rights reserved.
8490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 05/08/06
CM3202
PRELIMINARY
Figure 1. Typical DDR terminations, Class II
The VTT power requirement is proportional to the num-
ber of data lines and the resistance of the termination
resistor, but does not vary with memory size. In a typi-
cal DDR data bus system each data line termination
may momentarily consume 16.2-mA to achieve the
405-mV minimum over VTT needed at the receiver:
A typical 64 Mbyte SSTL-2 memory system, with 128
terminated lines, has a worst-case maximum VTT sup-
ply current up to ± 2.07A. However, a DDR memory
system is dynamic, and the theoretical peak currents
only occur for short durations, if they ever occur at all.
These high current peaks can be handled by the VTT
external capacitor. In a real memory system, the con-
tinuous average VTT current level in normal operation
is less than ± 200 mA.
The VDDQ power supply, in addition to supplying cur-
rent to the memory banks, could also supply current to
controllers and other circuitry. The current level typi-
cally stays within a range of 0.5A to 1A, with peaks up
to 2A or more, depending on memory size and the
computing operations being performed.
The tight tracking requirements and the need for VTT to
sink, as well as source, current provide unique chal-
lenges for powering DDR SDRAM.
CM3202 Regulator
The CM3202 dual output linear regulator provides all of
the power requirements of DDR memory by combining
two linear regulators into a single TDFN-8 or SOIC-8
package. VDDQ regulator can supply up to 2A current,
and the two-quadrant VTT termination regulator has
current sink and source capability to ±2A. The VDDQ
linear regulator uses a PMOS pass element for a very
low dropout voltage, typically 500mV at a 2A output.
The output voltage of VDDQ can be set by an external
voltage divider. The second output, VTT
, is regulated at
VDDQ/2 by an internal resistor divider. The VTT regula-
tor can source, as well as sink, up to 2A current. The
CM3202 is designed for optimal operation from a nom-
inal 3.3VDC bus, but can work with VIN as high as 5V.
When operating at higher VIN voltages, attention must
be given to the increased package power dissipation
and proportionally increased heat generation.
VREF is typically routed to inputs with high impedance,
such as a comparator, with little current draw. An ade-
quate VREF can be created with a simple voltage
divider of precision, matched resistors from VDDQ to
ground. A small ceramic bypass capacitor can also be
added for improved noise performance.
Input and Output Capacitors
The CM3202 requires that at least a 220μF electrolytic
capacitor be located near the VIN pin for stability and to
maintain the input bus voltage during load transients.
An additional 4.7μF ceramic capacitor between the VIN
and the GND, located as close as possible to those
pins, is recommended to ensure stability.
A minimum of a 220μF electrolytic capacitor is recom-
mended for the VDDQ output. An additional 4.7μF
ceramic capacitor between the VDDQ and GND, located
very close to those pins, is recommended.
A minimum of a 220μF, electrolytic capacitor is recom-
mended for the VTT output. This capacitor should have
low ESR to achieve best output transient response. SP
or OSCON capacitors provide low ESR at high fre-
quency, and thus are a good choice. In addition, place
a 4.7μF ceramic capacitor between the VTT pin and
GND, located very close to those pins. The total ESR
must be low enough to keep the transient within the
VTT window of 40mV during the transition for source to
sink. An average current step of ± 0.5A requires:
Both outputs will remain stable and in regulation even
during light or no load conditions.
Transmitter
VDDQ VTT (=VDDQ/2) VDDQ
Receiver
Rs = 25
Line
Rt = 25
VREF (=VDDQ/2)
Iterminaton 405mV
Rt 25Ω()
---------------------- 16.2mA==
ESR 40mV
1A
---------------
<40mΩ=
Application Info (cont’d)
© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 9
CM3202
PRELIMINARY
Adjusting VDDQ Output Voltage
The CM3202 internal bandgap reference is set at
1.25V. The VDDQ voltage is adjustable by using a resis-
tor divider, R1 and R2:
where VADJ = 1.25V (±-1%). For best regulator stability,
we recommend that R1 and R2 not exceed 10kΩ each.
Shutdown
ADJSD also serves as a shutdown pin. When this is
pulled high, > (VIN - 0.6V), the VDDQ output is turned
off and both source and sink MOSFET’s of the VTT reg-
ulator are set to a high impedance state. During shut-
down, the quiescent current is reduced to less than
3mA, independent of output load.
It is recommended that a 1N914 or equivalent low leak-
age diode be placed between ADJSD Pin and an
external shutdown signal to prevent interference with
the ADJ pin’s normal operation. When the diode anode
is pulled low, or left open, the CM3202 is again
enabled.
Current Limit, Foldback and Over-temperature Pro-
tection
The CM3202 features internal current limiting with ther-
mal protection. During normal operation, VDDQ limits
the output current to approximately 2A and VTT limits
the output current to approximately ±2A. When VTT is
current limiting into a hard short circuit, the output cur-
rent folds back to a lower level, about 1A, until the over-
current condition ends. While current limiting is
designed to prevent gross device failure, care should
be taken not to exceed the power dissipation ratings of
the package. If the junction temperature of the device
exceeds 170-°C (typical), the thermal protection cir-
cuitry triggers and shuts down both outputs. Once the
junction temperature has cooled to below about
120-°C, the CM3202 returns to normal operation.
Thermal Considerations
Typical Thermal Characteristics
The overall junction to ambient thermal resistance
(θJA) for device power dissipation (PD) primarily con-
sists of two paths in the series. The first path is the
junction to the case (θJC) which is defined by the pack-
age style and the second path is case to ambient (θCA)
thermal resistance which is dependent on board layout.
The final operating junction temperature for any condi-
tion can be estimated by the following thermal equa-
tion:
When a CM3202 is mounted on a double-sided printed
circuit board with two square inches of copper allo-
cated for “heat spreading,” the θJA is approximately
42.5-°C/Watt for the CM3202-00DE (TDFN-8) and
85-°C/Watt for CM3202-00SM (SOIC-8). Based on the
over temperature limit of 170°C with an ambient of
85°C, the available power of the package will be:
PCB Layout Considerations
TheCM3202 has a heat spreader attached to the bot-
tom of the TDFN-8 package in order for the heat to be
transferred more easily from the package to the PCB.
The heat spreader is a copper pad of dimensions just
smaller than the package itself. By positioning the
matching pad on the PCB top layer to connect to the
spreader during the manufacturing, the heat will be
transferred between the two pads. See the Figure 2,
the CM3202-00DE (TDFN-8) and CM3202-00SM
(SOIC-8) show the recommended PCB layout. Please
be noted that there are six vias in the SOIC-8 package
(four vias in the TDFN-8 package) on either side to
allow the heat to dissipate into the ground and power
planes on the inner layers of the PCB. Vias can be
placed underneath the chip, but this can be resulted in
VDDQ VADJ R1 R2+
R1
---------------------
×=
TJUNC TAMB PDθJC
()×PDθCA
()×++ T
AMB PDθCA
()×+==
W2=
°
°°
= / WC42.5 C85 C 170
PD(TDFN8)
W1=
°
°°
= / WC85 C85 C 170
PD(SOIC8)
Application Info (cont’d)
© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 10
CM3202
PRELIMINARY
blocking of the solder. The ground and power planes
need to be at least 2 square inches of copper by the
vias. It also helps dissipation if the chip is positioned
away from the edge of the PCB, and not near other
heat-dissipating devices. A good thermal link from the
PCB pad to the rest of the PCB will assure the best
heat transfer from the CM3202-00DE (TDFN-8) to
ambient, θJA, of approximately 42.5 -°C/W, or θJA of
approximately 85 °C/W for the CM3202-00SM (SOIC-
8).
Figure 2. Thermal Layout
Top View
Bottom Layer
Ground Plane Top Layer Copper
Connects to Heat Spreader
Pin Solder Mask
Thermal PAD
Solder Mask
Vias (0.3mm Diameter)
(TDFN-8 Package)
Bottom Layer
Ground Plane
Top Layer Copper
Connects to Heat Spreader
Top View
Pin Solder Mask
Vias (0.3mm Diameter)
Note: This drawing is not to scale
(SOIC-8 Package)
Application Info (cont’d)
© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 11
CM3202
PRELIMINARY
TDFN-08 Mechanical Specifications
The CM3202-00DE is supplied in an 8-lead, 0.65mm
pitch TDFN package. Dimensions are presented below.
=This package is compliant with JEDEC standard MO-229, variation
VEEC-1 with exception of the "D2", "E2" and "b" dimensions as
called out in the table above.
Package Dimensions for 8-Lead TDFN
PACKAGE DIMENSIONS
Package TDFN
JEDEC
No. MO-229 (Var. WEEC-1)=
Leads 6
Dim. Millimeters Inches
Min Nom Max Min Nom Max
A0.70 0.75 0.80 0.028 0.030 0.031
A1 0.00 0.02 0.05 0.000 0.001 0.002
A2 0.45 0.55 0.65 0.018 0.022 0.026
A3 0.20 0.008
b0.25 0.30 0.35 0.010 0.012 0.014
D3.00 0.118
D2 1.90 2.00 2.10 0.075 0.079 0.083
E3.00 0.118
E2 1.60 1.70 1.80 0.063 0.067 0.071
e0.65 0.026
K0.20 0.008
L0.20 0.30 0.45 0.008 0.012 0.018
# per
tape and
reel
3000 pieces
Controlling dimension: millimeters
Mechanical Package Diagrams
BOTTOM VIEW
AA3
A1
0.10 C
0.08 C
SIDE VIEW
TOP VIEW
b
L
0.10 C A B
M
8X
D2
E2
e
GND PAD
D
E
Pin 1
Marking
321
678
A2
K24
657
C0.25
3 1
8
4
5
Mechanical Details
© 2006 California Micro Devices Corp. All rights reserved.
05/08/06 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 lTel: 408.263.3214 lFax: 408.263.7846 lwww.cmd.com 12
CM3202
PRELIMINARY
SOIC-8 Mechanical Specifications
Dimensions for CM3202-00SM devices packaged in 8-
lead SOIC packages with an intagrated heatslug are
presented below.
* This is an approximate number which may vary.
** Centered on package centerline.
Package Dimensions for SOIC-8
PACKAGE DIMENSIONS
Package SOIC-8
Leads 8
Dimensions Millimeters Inches
Min Max Min Max
A1.30 1.62 0.051 0.064
A10.03 0.10 0.001 0.004
B0.33 0.51 0.013 0.020
C0.18 0.25 0.007 0.010
D4.83 5.00 0.190 0.197
E3.81 3.99 0.150 0.157
e1.27 BSC 0.050 BSC
H5.79 6.20 0.228 0.244
L0.41 1.27 0.016 0.050
# per tube 100 pieces*
# per tape
and reel
2500 pieces
Controlling dimension: inches
Mechanical Package Diagrams
H
TOP VIEW
L
END VIEW
C
e
B
A
A1
SEATING
PLANE
SIDE VIEW
1234
8765
Pin 1
Marking
D
E
Mechanical Details (cont’d)