2SC5198
2010-11-02
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
• High breakdown voltage: VCEO = 140 V (min)
• Complementary to 2SA1941
• Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 140 V
Collector-emitter voltage VCEO 140 V
Emitter-base voltage VEBO 5 V
Collector current IC 10 A
Base current IB 1 A
Collector power dissipation
(Tc = 25°C)
PC 100 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-16C1A
Weight: 4.7 g (typ.)
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2SC5198
2010-11-02
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 140 V, IE = 0 ― ― 5.0 μA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 ― ― 5.0 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 140 ― ― V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A 55 ― 160
DC current gain
hFE (2) V
CE = 5 V, IC = 5 A 35 83 ―
Collector-emitter saturation voltage VCE (sat) IC = 7 A, IB = 0.7 A ― 0.3 2.0 V
Base-emitter voltage VBE V
CE = 5 V, IC = 5 A ― 0.9 1.5 V
Transition frequency fT V
CE = 5 V, IC = 1 A ― 30 ― MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz ― 170 ― pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Marking
C5198
TOSHIBA
Lot No.
Characteristics
indicator
NOTE 2：
Part No. (or abbreviation code)
Note 2 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SC5198
2010-11-02
3
Collector current IC (A)
Collector-emitter saturation voltage
VCE (sat) (V)
VCE (sat) – IC
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
IC – VBE
Collector current IC (A)
hFE – IC
DC current gain hFE
Base-emitter voltage VBE (V)
Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector current IC (A)
Safe Operating Area
10
6
4
2
0
Common emitter
VCE = 5 V
8
0.8 1.2 1.6 0.4 0 2.0
Tc = 100°C
25°C
−25°C
100
10
0.1 1
1
Common emitter
VCE = 5 V
0.01
1000
10
Tc = 100°C
Tc = −25°C
Tc = 25°C
200
10
6
4
2
0
IB = 10 mA
20
Common emitter
Tc = 25°C
8
4 6 8 2 0 10
30
40
50
100
150
250
10
1
0.1
0.01
0.01
0.1 1 10
Common emitter
IC/IB = 10
100
Tc = 100°C
Tc = −25°C
Tc = 25°C
0.05
2
30
1
10 30 100 300
0.5
3
5
10
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
0.3
0.1
3
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2SC5198
2010-11-02
4
RESTRICTIONS ON PRODUCT USE
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
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