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ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S 15 A, 600 V, STEALTHTM Diode Features Description * Stealth Recovery trr = 29.4 ns (@ IF = 15 A) The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S is a STEALTHTM diode optimized for low loss performance in high frequency hard switched applications. The STEALTHTM family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTHTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. * Max Forward Voltage, VF = 2.2 V (@ TC = 25C) * 600 V Reverse Voltage and High Reliability * Avalanche Energy Rated * RoHS Compliant Applications * SMPS * Hard Switched PFC Boost Diode * UPS Free Wheeling Diode * Motor Drive FWD * SMPS FWD * Snubber Diode Package Symbol JEDEC TO-220AC-2L JEDEC STYLE TO-247-2L ANODE K CATHODE CATHODE (BOTTOM SIDE METAL) CATHODE (FLANGE) ANODE CATHODE A JEDEC STYLE TO-262(I2-PAK) JEDEC TO-263AB(D2-PAK) ANODE CATHODE CATHODE (FLANGE) CATHODE (FLANGE) N/C ANODE Device Maximum Ratings TC = 25C unless otherwise noted Symbol VRRM Ratings 600 Unit V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 145oC) 15 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 30 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A VRWM VR Parameter Repetitive Peak Reverse Voltage (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 1 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode November 2013 Parameter Power Dissipation EAVL Avalanche Energy (1 A, 40 mH) TJ, TSTG Operating and Storage Temperature Range TL Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 TPKG Ratings 150 Unit W 20 mJ -55 to 175 C 300 260 C C CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Package Marking and Ordering Information Part Number Top Mark Tape Width Quantity ISL9R1560G2 ISL9R1560G2 TO-247-2L Tube N/A N/A 30 ISL9R1560P2 ISL9R1560P2 TO-220AC-2L Tube N/A N/A 50 ISL9R1560S2 ISL9R1560S2 TO-262(I2-PAK) Tube N/A N/A 50 ISL9R1560S3ST ISL9R1560S3S TO-263(D2-PAK) Reel 13" dia 24mm 800 Package Packing Method Reel Size Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off State Characteristics IR Instantaneous Reverse Current VR = 600 V TC = 25C - - 100 A TC = 125C - - 1.0 mA On State Characteristics VF Instantaneous Forward Voltage IF = 15 A TC = 25C - 1.8 2.2 V TC = 125C - 1.65 2.0 V - 62 - pF Dynamic Characteristics CJ Junction Capacitance VR = 10 V, IF = 0 A Switching Characteristics trr Reverse Recovery Time trr Irr Reverse Recovery Current Qrr Reverse Recovered Charge Reverse Recovery Time trr Reverse Recovery Time S Irr Softness Factor (tb/ta) Qrr Reverse Recovered Charge trr Reverse Recovery Time S Irr Softness Factor (tb/ta) Reverse Recovery Current Qrr Reverse Recovered Charge diM/dt Reverse Recovery Current IF = 1 A, diF/dt = 100 A/s, VR = 30 V - 25 30 ns IF=15 A, diF/dt = 100 A/s, VR = 30 V IF = 15 A, diF/dt = 200 A/s, VR = 390 V, TC = 25C - 35 40 ns - 29.4 - ns - 3.5 - A - 57 - nC - 90 - ns - 2.0 - - 5.0 - A - 275 - nC ns IF = 15 A, diF/dt = 200 A/s, VR = 390 V, TC = 125C IF = 15 A, diF/dt = 800 A/s, VR = 390 V, TC = 125C Maximum di/dt during tb - 52 - - 1.36 - - 13.5 - A - 390 - nC - 800 - A/s Thermal Characteristics RJC Thermal Resistance Junction to Case - - 1.0 C/W RJA Thermal Resistance Junction to Ambient TO-247 - - 30 C/W RJA Thermal Resistance Junction to Ambient TO-220 - - 62 C/W RJA Thermal Resistance Junction to Ambient TO-262 - - 62 C/W RJA Thermal Resistance Junction to Ambient TO-263 - - 62 C/W (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 2 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Symbol PD 4000 30 175oC 1000 IR, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 25 175oC 150oC 20 25oC 125oC 15 100oC 10 150oC 125oC 100 100oC 75oC 10 1 5 25oC 0 0.5 0.75 1.0 1.25 1.5 1.75 2.0 0.1 100 2.25 200 VF, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 500 600 100 VR = 390V, TJ = 125C 80 VR = 390V, TJ = 125C tb AT IF = 30A, 15A, 7.5A 80 tb AT diF/dt = 200A/s, 500A/s, 800A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 400 Figure 2. Reverse Current vs Reverse Voltage 100 60 40 20 60 40 20 ta AT diF/dt = 200A/s, 500A/s, 800A/s ta AT IF = 30A, 15A, 7.5A 0 0 5 10 15 20 25 0 200 30 IF, FORWARD CURRENT (A) 400 600 800 1000 1200 1400 diF/dt, CURRENT RATE OF CHANGE (A/s) 1600 Figure 4. ta and tb Curves vs diF/dt Figure 3. ta and tb Curves vs Forward Current 25 16 diF/dt = 800A/s VR = 390V, TJ = 125C Irr, MAX REVERSE RECOVERY CURRENT (A) Irr, MAX REVERSE RECOVERY CURRENT (A) 300 VR , REVERSE VOLTAGE (V) 14 12 diF/dt = 500A/s 10 8 diF/dt = 200A/s 6 4 2 0 5 10 15 20 25 IF = 30A 20 IF = 15A 15 IF = 7.5A 10 5 0 200 30 IF, FORWARD CURRENT (A) 400 600 800 1000 1200 1400 1600 diF/dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 VR = 390V, TJ = 125C Figure 6. Maximum Reverse Recovery Current vs diF/dt 3 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Typical Performance Curves QRR, REVERSE RECOVERED CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR 700 2.5 VR = 390V, TJ = 125C IF = 30A 2.0 IF = 15A 1.5 IF = 7.5A 1.0 0.5 200 400 600 800 1000 1200 1400 VR = 390V, TJ = 125C IF = 30A 600 500 IF = 15A 400 IF = 7.5A 300 200 200 1600 1200 1000 800 600 400 200 0 0.1 1 10 1000 1200 1400 1600 12 10 8 6 4 2 0 140 145 150 155 160 165 170 175 TC, CASE TEMPERATURE (oC) Figure 9. Junction Capacitance vs Reverse Voltage 1.0 14 100 VR , REVERSE VOLTAGE (V) THERMAL IMPEDANCE 800 16 IF(AV), AVERAGE FORWARD CURRENT (A) CJ , JUNCTION CAPACITANCE (pF) 600 Figure 7. Reverse Recovered Charge vs diF/dt Figure 7. Reverse Recovery Softness Factor vs diF/dt ZJA, NORMALIZED 400 diF/dt, CURRENT RATE OF CHANGE (A/s) diF/dt, CURRENT RATE OF CHANGE (A/s) Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZJA x RJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 4 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE diF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD IL Q1 VDD DUT t0 Figure 14. Avalanche Energy Test Circuit (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms 5 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Test Circuit and Waveforms Typical Performance Curves (Continued) ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Mechanical Dimensions Figure 16. TO-247 2L - TO247,MOLDED,2LD, JEDEC OPTION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002. (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 6 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Mechanical Dimensions Figure 17. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2. (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 7 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Mechanical Dimensions Figure 18. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002. (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 8 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode Mechanical Dimensions Figure 19. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002. (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2001 Fairchild Semiconductor Corporation ISL9R1560P2, ISL9R1560G2, ISL9R1560S2, ISL9R1560S3S Rev. C1 10 www.fairchildsemi.com ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S -- STEALTHTM Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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