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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.B
High gain amplifier transistor (25V, 2A)
2SD2153
Features Dimensions (Unit : mm)
1) Low saturation voltage,
typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA
2) Excellent DC current gain characteristics.
Absolute maximum ratings (Ta=25C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
25
6
2
2
0.5
150
−55 to +150
Unit
V
V
V
A(DC)
3 A(Pulse)
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse, Pw=10ms
∗1
∗1
∗2
∗2Mounted on a 40 40
t
0.7mm Ceramic substrate
+
+
Packaging specifications and hFE
Type 2SD2153
MPT3
UVW
T100
DN
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes h
FE
∗
∗
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
30
25
6
−
−
820
−
−
−
−
−
−
−
−
110
22
−
−
−
0.5
0.5
1800
−
−
V
V
V
μA
μA
−
MHz
pF
I
C
=
50μA
I
C
=
1mA
I
E
=
50μA
V
CB
=
20V
V
EB
=
5V
−0.12 0.5 V I
C
/I
B
=
1A/20mA
V
CE
/I
C
=
6V/0.5A
V
CE
=
10V
,
I
E
=
−10mA ,
f= 100MHz
V
CB
=
10V
,
I
E
=
0A ,
f =
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
∗
∗
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
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c 2009 ROHM Co., Ltd. All rights reserved. 2009.12 - Rev.B
Data Sheet 2SD2153
Electrical characteristics curves
00
Fig.1 Ground emitter output
characteristics
COLLECTOR TO EMITTER VOLTAGE : VCE (V
)
COLLECTOR CURRENT : I
C
(A)
1
1
2
2
10mA 7mA
6mA
5mA
9mA
8mA
3mA
2mA
1
B
=1mA
4mA
Ta=100 C
25 C
−25 C
∗ This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value
.
And we can not guarantee the value based on the data.
1 1.5500m0
Fig.2 Ground emitter propagatio
n
characteristics
BASE TO EMITTER VOLTAGE : VBE (V
)
COLLECTOR CURRENT : I
C
(A)
1m
2m
5m
1
2
5
10
10m
20m
50m
100m
200m
500m
Fig.3 DC current gain
V
CE
=6V
Ta=100 C 25 C
−40 C
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
1m
50
100
200
500
1k
2k
5k
10k
10m 100m 1 1
0
I
C
/I
B
=50 40
30
10
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat) (V)
1m
1m 2m
2m
5m
5m
10m
10m
20m
20m
50m
50m
100m
100m
200m
200m
500m
500m
1
1
25
COLLECTOR CURRENT : I
C
(
A
)
Fig.4
Collector-emitter saturation voltag
e
vs. collector current
IC/IB=10
∗ This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)
(V)
1m 2m
2m
5m
5m
10m
10m
20m
20m
50m
50m
100m
100m
200m
200m
500m
500m
1
1
251m
COLLECTOR CURRENT : I
C
(A)
Fig.5
Collector-emitter saturation voltag
e
vs. collector current
Ta=100 C
25 C
−25 C
TRANSITION FREQUENCY : f
T
(MHz)
2 5 10 20 50 100 200 500 1000
1
2
5
10
20
50
100
200
500
10000
1
EMITTER CURRENT : I
E
(mA)
Fig.6 Gain bandwith product
vs. emitter current
∗ This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value
.
And we can not guarantee the value based on the data.
V
CE
=6V
Ta=25 C
COLLECTOR OUTPUT CAPACITANCE : Cob(p
F)
10 0.2
20
0.5
50
1
100
2
200
5
500
10
1000
20 50 1000.1
COLLECTOR TO BASE VOLTAGE : V
CB
(V
)
Fig.7
Collector output capacitance
vs. collector-base voltage
Ta=25°C
f=1MHz
Ic=0A
10 0.2
20
0.5
50
1
100
2
200
5
500
10
1000
0.1
EMITTER TO BASE VOLTAGE : V
EB
(V
Fig.8 Emitter input capacitanc
vs. emitter-base voltage
Ta=25°C
f=1MHz
Ic=0A
PW=100ms
COLLECTOR CURRENT : Ic (A)
1
1
10
10
10
0
0.1
0.001
0.01
0.1
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
Fig.9 Safe operating area
Ta=25°C
Single non repetitive pulse
Ic max (Pulse)
PW=10ms
DC
R0039
A
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