1N5400 - 1N5408
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.929 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNIT
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°
C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps. VF0.95 V
Maximum DC Reverse Current Ta = 25 °CIR5.0 µA
at rated DC Blocking Voltage Ta = 100 °CIR(H) 50 µA
Typical Junction Capacitance (Note1) CJ28 pF
Typical Thermal Resistance (Note2) RθJA 15 °C/W
Junction Temperature Range TJ - 65 to + 175 °C
Storage Temperature Range TSTG - 65 to + 175 °C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2 Rev. 02 : March 25, 2005
A200IFSM
RATING
SILICON RECTIFIER DIODES
IF3.0 A
0.21 (5.33)
0.19 (4.83)
DO - 201AD
0.375 (9.53)
0.285 (7.24)
0.052 (1.32)
0.048 (1.22)
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
* Pb / RoHS Free
RATING AND CHARACTERISTIC CURVES ( 1N5400 - 1N5408 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
AMBIENT TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG 4 . - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
Page 2 of 2 Rev. 02 : March 25, 2005
2.4
1.8
1.2
0.6
10
1.0
200
0
250
0
150
100
50
10
80
1.0
0.01
100
0.1
100 140
0
20 40 60 120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT,
MICROAMPERES
Ta = 25 °C
Ta = 100 °C
TJ = 25 °C
Pulse Width = 300 µs
2% Duty Cycle
0.1
100
10
1
50
5
JUNCTION CAPACITANCE
(pF)
REVERSE VOLTAGE, VOLTS
1 2 4 10 20 40 100
00.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.01
8.3ms SINGLE HALF SINE-WAVE
(JEDEC) Method
TJ = 25 °C