DATA SH EET
Product data sheet 2002 Jun 26
DISCRETE SEMICONDUCTORS
2PB709AW
PNP general purpose transistor
db
ook, halfpage
M3D114
2002 Jun 26 2
NXP Semiconductors Product data sheet
PNP general purpose transistor 2PB709AW
FEATURES
High collector current (max. 100 mA)
Low collector-emitter saturation volt age (max. 500 mV).
APPLICATIONS
General purpose switc hing and amplification.
DESCRIPTION
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
MARKING
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE(1)
2PB709AQW N5*
2PB709ARW N7*
2PB709ASW N9*
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
Fig.1 Simplified outline SC-70 (SOT323)
and symbol.
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).
Note
1. For mounting conditions , see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volta ge open emitter 45 V
VCEO collector-emitter voltage open base 45 V
VEBO emitter-base voltage open collector 6 V
ICcollector current (DC) 100 mA
ICM peak collector current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 200 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
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NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB709AW
THERMAL CHARACTE RISTICS
Note
1. For mounting conditions , see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp 300 μs; δ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector-base cut-off current IE = 0; VCB = 45 V 10 nA
IE = 0; VCB = 45 V; Tj = 150 °C 5μA
IEBO emitter-base cu t-off current IC = 0; VEB = 5 V 10 nA
hFE DC current gain IC = 2 mA; VCE = 10 V
2PB709AQW 160 260
2PB709ARW 210 340
2PB709ASW 290 460
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA;
note 1 500 mV
Cccollector capacitance IE = ie = 0; VCB = 10 V;
f = 1 MHz 5pF
fTtransition freque ncy IC = 1 mA; VCE = 10 V;
f = 100 MHz
2PB709AQW 60 MHz
2PB709ARW 70 MHz
2PB709ASW 80 MHz
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NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB709AW
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
2002 Jun 26 5
NXP Semiconductors Pr oduct data shee t
PNP general purpose transistor 2PB709AW
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
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specifications and product descriptions, at any time and
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values an d
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/01/pp6 Date of release: 2002 Jun 26 Document orde r number: 9397 750 09758