BSM 25 GD 120 DN2 IGBT Power Module * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type VCE BSM 25 GD 120 DN2 BSM 25 GD120DN2E3224 IC Package Ordering Code 1200V 35A ECONOPACK 2 C67076-A2505-A67 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 35 TC = 80 C 25 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 70 TC = 80 C 50 Power dissipation per IGBT W Ptot TC = 25 C 200 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.6 Diode thermal resistance, chip case RthJCD 1 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 + 150 C -40 ... + 125 K/W sec 40 / 125 / 56 Oct-20-1997 BSM 25 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 1 mA 4.5 5.5 6.5 VGE = 15 V, IC = 25 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 25 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 0.5 0.8 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 2 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 180 AC Characteristics Transconductance VCE = 20 V, IC = 25 A Input capacitance 10 pF - 1650 - - 250 - - 110 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-20-1997 BSM 25 GD 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Rise time - 75 150 - 65 130 - 400 600 - 50 100 tr VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Fall time tf VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Free-Wheel Diode Diode forward voltage V VF IF = 25 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 25 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s, Tj = 125 C Reverse recovery charge - 0.13 C Qrr IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C - 2.3 - Tj = 125 C - 6 - 3 Oct-20-1997 BSM 25 GD 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 220 t = 11.0s p W Ptot A 180 IC 160 10 1 100 s 140 120 100 1 ms 80 10 0 60 10 ms 40 20 0 0 20 40 60 80 100 120 C DC 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 40 A K/W IC 32 ZthJC 28 10 -1 24 20 D = 0.50 0.20 16 10 -2 0.10 12 0.05 0.02 8 single pulse 0.01 4 0 0 20 40 60 80 100 120 C 160 TC 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-20-1997 BSM 25 GD 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 50 50 A IC 40 35 A 17V 15V 13V 11V 9V 7V IC 40 35 30 30 25 25 20 20 15 15 10 10 5 5 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 50 A IC 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE 5 Oct-20-1997 BSM 25 GD 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 25 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C Ciss 14 600 V 800 V 10 0 12 10 Coss 8 10 -1 Crss 6 4 2 0 0 20 40 60 80 100 120 10 -2 0 140 nC 170 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-20-1997 BSM 25 GD 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 47 par.: VCE = 600 V, VGE = 15 V, IC = 25 A 10 3 t 10 3 tdoff t ns tdoff ns tdon 10 2 10 2 tdon tr tr tf 10 1 0 10 20 30 40 A tf 10 1 0 60 20 40 60 80 100 120 140 IC Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 47 par.: VCE = 600V, VGE = 15 V, IC = 25 A 10 10 Eon mWs E mWs 8 E 8 7 7 6 6 5 5 Eoff 4 3 2 2 1 1 10 20 30 40 A Eon 4 3 0 0 180 RG 60 IC 0 0 Eoff 20 40 60 80 100 120 140 180 RG 7 Oct-20-1997 BSM 25 GD 120 DN2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 1 50 A IF Diode K/W 40 ZthJC 10 0 35 30 Tj=125C Tj=25C 25 10 -1 D = 0.50 0.20 20 0.10 15 0.05 10 -2 10 0.02 single pulse 0.01 5 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-20-1997 BSM 25 GD 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g 9 Oct-20-1997