Surface Mount
Monolithic Amplier
Page 1 of 4
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Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.
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IF/RF MICROWAVE COMPONENTS
Product Features
• InGaP HBT microwave amplier
• Miniature SOT-89 package
• Internally Matched to 50 Ohms
• Frequency range, DC to 4 GHz
• Output power, 15.8 dBm typ.
• Excellent package for heat dissipation, exposed metal bottom
• Low thermal resistance for high reliability
• Aqueous washable
• Protected by US Patent 6,943,629
Typical Applications
• Cellular
• PCS
• Communication receivers & transmitters
simplified schematic and pin description
Function Pin Number Description
RF IN 1RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF-OUT and DC-IN 3
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”.
GND 2,4 Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
General Description
Gali 6F+ (RoHS compliant) is a wideband amplier offering high dynamic range. Lead nish is SnAgNi. It
has repeatable performance from lot to lot, and is enclosed in a SOT-89 package. It uses patented Tran-
sient Protected Darlington conguration and is fabricated using InGaP HBT technology. Expected MTBF is
8,000 years at 85°C case temperature. Gali 6F+ is designed to be rugged for ESD and supply switch-on
transients.
GROUND
RF IN
RF-OUT and DC-IN
REV. R
M120653
D60129
EE-7974Q
GALI-6F+
RS/YB/FL/AM
130516
DC-4 GHz
CASE STYLE: DF782
PRICE: $1.29 ea. QTY. (20)
Gali 6F+
3 RF-OUT & DC-IN
2 GROUND
1 RF-IN
4
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications