This is information on a product in full production.
March 2016 DocID027223 Rev 3 1/19
STH275N8F7-2AG,
STH275N8F7-6AG
Automotive-grade N-channel 80 V, 0.0017 Ω typ., 180 A,
STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6
Datasheet
−
production data
Figure 1. Internal schematic diagram
Features
•Designed for automotive applications and
AEC-Q101 qualified
•Among the lowest R
DS(on)
on the market
•Excellent figure of merit (FoM)
•Low C
rss
/C
iss
ratio for EMI immunity
•High avalanche ruggedness
Applications
•Switching applications
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
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1
23
TAB
H
2
PAK-2 H
2
PAK-6
1
TAB
7
Order code V
DS
R
DS(on)
max I
D
STH275N8F7-2AG 80 V 0.0021 Ω180 A
STH275N8F7-6AG
Table 1. Device summary
Order code Marking Package Packaging
STH275N8F7-2AG 275N8F7 H
2
PAK-2 Tape and reel
STH275N8F7-6AG H
2
PAK-6
www.st.com
Contents STH275N8F7-2AG, STH275N8F7-6AG
2/19 DocID027223 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 H
2
PAK- 2, STH275N8F7-2AG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2 H
2
PAK- 6, STH275N8F7-6AG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID027223 Rev 3 3/19
STH275N8F7-2AG, STH275N8F7-6AG Electrical ratings
19
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 80 V
V
GS
Gate-source voltage ± 20 V
I
D(1)
1. Limited by package
Drain current (continuous) at T
C
= 25 °C 180 A
I
D (1)
Drain current (continuous) at T
C
= 100 °C 180 A
I
DM(2)
2. Pulse width limited by safe operating area
Dra in current (pulsed) 720 A
P
TOT (3)
3. This value is rated according to R
thj-c
Total dissipation at TC = 25 °C 315 W
EAS(4)
4. Starting T
j
= 25°C, I
d
= 65 A, V
dd
= 50 V
Single pulse avalanche energy 1.16 J
T
J
Operating junction temperature range -55 to 175 °C
T
stg
Storage temperature range °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
thj-case
Thermal res is t anc e jun cti on- cas e 0.48 °C/W
R
thj-pcb (1)
1. When mounted on FR-4 board of 1 inch
2
, 2oz Cu
Thermal res is t anc e jun cti on- pcb 35 °C/W
Electrical characteristics STH275N8F7-2AG, STH275N8F7-6AG
4/19 DocID027223 Rev 3
2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drai n-source brea kdow n
voltage V
GS
= 0 V, I
D
= 1 mA 80 V
I
DSS
Zero gate voltage drai n
current
V
GS
= 0 V, V
DS
= 80 V 1 µA
V
GS
= 0 V, V
DS
= 80 V,
T
C
=125 °C
(1)
1. Defined by design, not subject to production test.
100 µA
I
GSS
Gate body leakage current V
DS
= 0 V, V
GS
= +20 V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2.5 4.5 V
R
DS(on)
Static drain-source
on- resistance V
GS
= 10 V, I
D
= 90 A 0.0017 0.0021 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input cap ac itance
V
GS
=0 V, V
DS
=5 0 V,
f=1 MHz
- 13600 - pF
C
oss
Output capacitance - 2050 - pF
C
rss
Reverse transfer
capacitance -236 - pF
Q
g
Total gate charge V
DD
=40 V, I
D
= 180 A
V
GS
=10 V
Figure 14
-193 - nC
Q
gs
Gate- sour ce charge - 96 - nC
Q
gd
Gate-drain charge - 46 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
=40 V, I
D
= 90 A,
R
G
=4.7 Ω, V
GS
= 10 V
Figure 13
-56-ns
t
r
Rise time - 180 - ns
t
d(off)
Turn-off delay time - 98 - ns
t
f
Fall time - 42 - ns
DocID027223 Rev 3 5/19
STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics
19
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Ty p. Max. Unit
I
SD
Source-drain current - 180 A
I
SDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 720 A
V
SD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage V
GS
=0 V, I
SD
= 90 A - 1.2 V
t
rr
Rever se r ec ove r y time I
SD
= 180 A,
di/dt = 100 A/µs,
V
DD
=64 V, T
j
=150 °C
-78 ns
Q
rr
Rever se rec ove ry charge - 182 nC
I
RRM
Rever se r ec ove ry current - 4.7 A
Electrical characteristics (curves) STH275N8F7-2AG, STH275N8F7-6AG
6/19 DocID027223 Rev 3
3 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
I
D
10
1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
1ms
10ms
0.1
Tj=175°C
Tc=25°C
Single pulse
100
100µs
AM15670v1
K
10 t
p
(s)
-4 10-3 10-2
0.1
10-5
0.01
AM15684v1
Single pulse
d=0.5
0.05
0.02
0.01
0.2
0.1
Figure 4. Gate charge vs gate-source voltage Figure 5. Output characteristics
V
GS
6
4
2
0
050 Q
g
(nC)
(V)
150
8
100
10
V
DD
=40V
I
D
=180A
12
200
AM15683v1
I
D
150
100
50
0
04V
DS
(V)
(A)
26
200
250
6V
7V
V
GS
=8, 9, 10V
300
5V
8
350
AM15672v1
Figure 6. Transfer characteristics Figure 7. Normalized V
(BR)DSS
vs temperatu re
I
D
150
100
50
0
04V
GS
(V)
8
(A)
26
200
250
300
350
13579
V
DS
=2V
AM15682v1
V
(BR)DSS
-75 T
J
(°C)
(norm)
-50 0
-25
0.96
0.98
1
1.02
1.04
I
D
=1 mA
25 50 75 100 125 150
AM15681v1
DocID027223 Rev 3 7/19
STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics (curves)
19
Figure 8. Static drain-source on-resistance Figure 9. Capacitance variations
R
DS(on)
1.72
1.70
1.68
1.66
040 I
D
(A)
(mΩ)
20 60
1.74
140
80 100 120 160 180
V
GS
=10V
AM15674v1
C
6000
4000
2000
0
020 VDS(V)
(pF)
10 30
Ciss
Coss
Crss
40 50 60
8000
10000
12000
14000
16000
AM15676v1
Figure 10. Source -drain diode forward
characteristics Figure 1 1. Normalized ga te threshold volt age vs
temperature
Figure 12. Normalized on-resistance vs
temperature
V
SD
040 I
SD
(A)
(V)
20 100
60 80
0.5
0.6
0.7
0.8
0.9
1T
J
=-50°C
T
J
=150°C
T
J
=25°C
120 140 160
AM15680v1
V
GS(th)
0.7
0.6
0.5
0.4
-75 T
J
(°C)
(norm)
-50
0.8
75
-25 125
I
D
=250µA
025 50 100 150
0.9
1
1.1
1.2
AM15677v1
R
DS(on)
1.2
1
0.8
0.6
T
J
(°C)
(norm)
1.4
0.4
-75 -50 75
-25 125
025 50 100
I
D
=90 A
V
GS
=10 V
150
1.6
1.8
2
AM15678v1
Test circuits STH275N8F7-2AG, STH275N8F7-6AG
8/19 DocID027223 Rev 3
4 Test circuits
Figure 13. Switching times test circuit for
resistive load Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times Figure 16. Unclamped inductive load tes t circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
DocID027223 Rev 3 9/19
STH275N8F7-2AG, STH275N8F7-6AG Package mechanical data
19
5 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Package mechanical data STH275N8F7-2AG, STH275N8F7-6AG
10/19 DocID027223 Rev 3
5.1 H
2
PAK-2, STH275N8F7-2AG
Figure 19. H²PAK-2 drawing
DocID027223 Rev 3 11/19
STH275N8F7-2AG, STH275N8F7-6AG Package mechanical data
19
Table 8. H²PAK-2 mechanical data
Dim. mm
Min. Typ. Max.
A4.30
-
4.80
A1 0.03 0.20
C1.17 1.37
e4.98 5.18
E0.50 0.90
F0.78 0.85
H 10.00 10.40
H1 7.40 7.80
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.5 1.7
M2.6 2.9
R0.20 0.60
V0° 8°
Package mechanical data STH275N8F7-2AG, STH275N8F7-6AG
12/19 DocID027223 Rev 3
Figure 20. H²PAK-2 recommended footprint (in mm)
B'
DocID027223 Rev 3 13/19
STH275N8F7-2AG, STH275N8F7-6AG Package mechanical data
19
5.2 H
2
PAK-6, STH275N8F7-6AG
Figure 21. H²PAK-6 drawing
8159693_Rev_F
Package mechanical data STH275N8F7-2AG, STH275N8F7-6AG
14/19 DocID027223 Rev 3
Table 9. H²PAK-6 mechanical data
Dim. mm
Min. Typ. Max.
A4.30
-
4.80
A1 0.03 0.20
C1.17 1.37
e2.34 2.74
e1 4.88 5.28
e2 7.42 7.82
E0.45 0.60
F0.50 0.70
H 10.00 10.40
H1 7.40 7.80
L 14.75 15.25
L1 1.27 1.40
L2 4.35 4.95
L3 6.85 7.25
L4 1.5 1.75
M1.90 2.50
R0.20 0.60
V0° 8°
DocID027223 Rev 3 15/19
STH275N8F7-2AG, STH275N8F7-6AG Package mechanical data
19
Figure 22. H²PAK-6 recommended footprint (dimensions are in mm)
footprint_Rev_F
Packagi ng infor mat ion STH275N 8F7- 2AG, STH27 5N8F7 -6 AG
16/19 DocID027223 Rev 3
6 Packaging information
Figure 23. Tape
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
DocID027223 Rev 3 17/19
STH275N8F7-2AG, STH275N8F7-6AG Packaging information
19
Figure 24. Reel
Table 10. Tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STH275N8F7-2AG, STH275N8F7-6AG
18/19 DocID027223 Rev 3
7 Revision history
Table 11. Document revision history
Date Revision Changes
27-Nov-2014 1First release.
05-Mar-2015 2 Document status promoted from preliminary to production data.
Updated titl e and feat ure in cover p ag e.
10-Mar-2016 3 Updated Table 4.
Minor text chan ges .
DocID027223 Rev 3 19/19
STH275N8F7-2AG, STH275N8F7-6AG
19
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