CJD340 NPN CJD350 PNP COMPLEMENTARY SILICON POWER TRANSISTOR DPAKE| DPAK CASE MAXIMUM RATINGS (Tcp=25C) SYMBOL Collector-Base Voltage VcBo Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current Io Peak Collector Current lom Power Dissipation (TG=25C) Pp Power Dissipation (Ta=25C) Pp Operating and Storage Junction Temperature Ty Tstg Thermal Resistance OJc Thermal Resistance Oya Central . Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD340, CJD350 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high voltage general purpose applications. ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO Vcop=300V lEBO Vep=3.0V BVCEO Ic=1.0mA hee VcEH10V, Ic=50mA 124 UNITS 300 Vv 300 Vv 3.0 Vv 500 mA 750 mA 15 WwW 1.56 W -65 to +150 C 8.33 OCW 80.1 oC/W MIN MAX UNITS 100 pA 100 pA 300 Vv 30 240 All dimensions in inches (mm). TOP VIEW .250(6.35) .086(2.19) .265(6.73) -094(2.40) 018(0.45) , 4 -205(5.20) -024(0.60) Ie -215(5.46) Pica He toe .368(9.35 | hee eee . 409(10.40) .020(0.51 1 + 3 MINIMUM aa } re -ozg a ee : -02) .025(0. preioash e-cze.se) oaSt Tay * 181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR DATA SHEET R2 125