Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-VP3203
B082613
VP3203
VP2LW W = Code for week sealed
= “Green” Packaging
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVP
3203
YYWW
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►High input impedance and high gain
►Excellent thermal stability
►Integral source-to-drain diode
Applications
►Motor controls
►Converters
►Ampliers
►Switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
TO-243AA (SOT-89)
Package may or may not include the following marks: Si or
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefcient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
P-Channel Enhancement-Mode
Vertical DMOS FET
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Conguration
TO-92
GATE
SOURCE
DRAIN
TO-92
Product Marking
Package may or may not include the following marks: Si or
Ordering Information
Part Number Package Option Packing
VP3203N3-G 3-Lead TO-92 1000/Bag
VP3203N3-G P002
3-Lead TO-92 2000/Reel
VP3203N3-G P003
VP3203N3-G P005
VP3203N3-G P013
VP3203N3-G P014
VP3203N3-G TO-243AA (SOT-89) 2000/Reel
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min)
-30V 0.6Ω-4.0A
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Typical Thermal Resistance
Package θja
TO-92 132OC/W
TO-243AA (SOT-89) 133OC/W
TO-243AA (SOT-89)
GATE
SOURCE
DRAIN
DRAIN