fiAMOSPEC HIGH POWER NPN SILICON POWER TRANSISTORS General-purpose linear amplifiers,series pass regulatorsand inductive switching Applications . FEATURES: * Low Collector-Emitter Saturation Voitage- Voegsat) = 4-0 V (Max.) @ I, = 30 A, I, = 6.0 A -- 2N3771 Voegsaty = 4-0 V (Max.) @ I, = 20 A, I, = 4.0 A -- 2N3772 MAXIMUM RATINGS NPN 2N3771 2N3772 20 AND 30 AMPE NPN SILICON POWER TRANSISTORS 40 and 60 VOLTS 150 WATTS To , TEMPERATURE(C) Characteristic Symbol 2N3771 2N3772 Unit Collector-Emitter Voltage Veceo 40 60 V Collector-Emitter Voltage Veex 50 80 V Collector-Base Voltage Vero 50 100 V Emitter-Base Voltage Veso 5 7 Vv Collector Current-Continuous le 30 20 A -Peak lom 30 3C Base Current-Continuous lp 7.5 5.0 A -Peak lam 15 15 Total Power Dissipation @T,=25C Py 150 WwW Derate above 25C 0.857 wrc Operating and Storage Junction Ty .Tst C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Reje 1.17 CAN FIGURE -1 POWER DERATING 150 E 125 400 SN gj 75 NJ a Iw & 50 XJ 3 a 25 s f 0 0 25 50 75 100 125 150 175 200 Le x m | A PIN 1.BASE 2.EMITTER COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 38.75 | 39.96 B 19.28 | 2223 c 7.96 9.28 D 11.18 | 1219 E 25.20 | 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 30.40 | 16.64 | 17.30 J 3.88 4.36 K 10.67 | 11.182N3771, 2N3772 NPN nS ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwse noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vceoisus) V (I, = 200 mA, |, =O ) 2N3771 40 2N3772 60 Collector - Emitter Sustaining Voltage Veexisus) Vv (Ip =0.2 A, Veeco = 1.5 V, Ree = 100 Ohms) 2N3771 50 2N3772 80 Collector Cutoff Current mA (Voge = 30 V, I, = 0) 2N3771 leEo 10 (Veg = 50 V, Ip =0) 2N3772 10 Collector Cutoff Current logy mA ( Veg = 50 V, VeE(om =1.5V) 2N3771 2.0 ( Veg = 100 V, Veseiom =15V) 2N3772 5.0 Collector Cutoff Current mA (Vop =50V,1-=0) 2N3771 lego 2.0 (Veg = 100 V, 1, =0) 2N3772 5.0 Emitter Cutoff Current leBo mA ( Vep= 5.0 V, 1, =O ) 2N3771 5.0 (Veg = 7.0V, 1, =0 ) 2N3772 5.0 ON CHARACTERISTICS (1) Dc Current Gain hFE (IL =15A,V = 4.0V) 2N3771 15 60 (I, =10A, V,~=4.0V) 2N3772 15 60 (1, =30A,V.,.= 4.0 V) 2N3771 5.0 (1, =20A,V..=4.0V) 2N3772 5.0 Collector - Emitter Saturation Voltage Voe(sat) Vv (l,=15A,1,=15A) 2N3771 2.0 (4, =10A, 1, =1.0A) 2N3772 1.4 (|, =30A, 1, =6.0A) 2N3771 4.0 (1, =20A, 1, =4.0A) 2N3772 4.0 Base - Emitter On Voltage Vae(on) V (Ig= 15 A, Veg = 4.0V) 2N3771 2.7 (I= 10 A, Veg = 4.0V) 2N3772 2.2 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (2) fy MHz (Ig = 1.0A, Veg = 4.0 V , f = 50 KHz ) 0.2 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% (2) f= [Bea] * feo2N3771, 2N3772 NPN lc , COLLECTOR CURRENT (Amp) hee , DC CURRENT GAIN t, TIME (us) ACTIVE-REGION SAFE OPERATING AREA (SOA) 0 500 ms 4 100us4 [|] 30 Na771 IN NTN 40us | SS SLE 20 Ko N 2N3772 N NI \ | \ 200us SON OK ON NY \\ \ NN NI do N NI 10 bs ~ Sams 7 > Lt S h y A 100 ms | 5 Ph N |+---Bonding Wire Limit ~~~ Thermally Limited T.=25C (Single Puse) 3/- Second Breakdown Limit 2N3771+4 y | | LILI ansr72 2 1 1 2 3 5 7 10 20 30 50 70 100 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) DC CURRENT GAIN Ty=150C Vop=4.0V 25C 03 (08 1 2 5 7 410 20 30 ic , COLLECTOR CURRENT (AMP) TURN-OFF TIME 10 = 0.5 0.2 0.1 0.3 05 0.7 1 2 305 7 Ic , COLLECTOR CURRENT (AMP) 10 20 30 There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate [c-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typq=200 C;T. is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided T.yeKS200C, At high case temperatures, thermal limita - tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. COLLECTOR SATURATION REGION NN Ty=25C 20A = a = N 2 oo o a Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) o 0.01 0.02 005 60.1 02 0.5 1.0 2.0 5.0 10 ls, BASE CURRENT (AMP) CAPACITANCES 2k = x 700 500 C,CAPACITANCE(pF) 300 200 0.1 02 0.5 1 2 5 10 20 50 100 Ve, REVERSE VOLTAGE(VOLTS)