REVISIONS DOC. NO. SPC-FOO5 * Effective: 7/8/02 * DCP No: 1398 SRN, GREDPR. NG FONG DME uN mu it I c om WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC DCP #| REV DESCRIPTION DRAWN| DATE |CHECKD| DATE |APPRVD) DATE TECHNOLOGY. p 1885 A RELEASED BYF | 02/05/06} HO | 2/6/06 | JWM | 2/6/06 SPCFOO5.DWG RoHS 35 COLLECTOR Compliant PNP Dim | Min Max D pti A | 5.24 | 5.84 2 BASE escription: AMPLIFIER AND SWITCHES 7 The 2N3251A is a silicon planar epitaxial PNP transistor in Jedec TO18 - - metal case. They are suited for switching and amplifier applications. D | 0.40 | 0.55 Fj = {076 1 EMITTER F - 1.27 Absolute Maximum Ratings: G| - 2.97 CollectorBase Voltage, Vogp = 60V H | 0.91 1.17 A CollectorEmitter Voltage, Veeg = 60V J | 0.71 1.21 B EmitterBase Voltage, Vegg = 5V K 112.70 _ ( ' Continuous Collector Current, I, = 0.2A L 1S i Total Device Dissipation (Ty = +25C), Pp = 0.36mW 1 C Derate above 25C = 2.06mW/C f 1 Total Device Dissipation (Te = +25C), Pp= 1.2W TE Derate above 25C = 6.9mW/*C E Operating Junction Temperature Range, Tj = 55 to +150C Storage Temperature Range, Tetg = 55 to +150C K Thermal Resistance, JunctiontoCase, Ric = 146C/W Thermal Resistance, JunctiontoAmbient, Rina = 486C/W PIN 1. EMITTER 2. BASE 5. COLLECTOR 3 2 14 DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED BASAM YOUSIF 02/05/06 Transistor, Power, Silicon, TO-18, PNP HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE UNLESS OTHERWISE BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: SIZE| DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE OStR SHALL DETERMINE THE SUNABILINY Ge THE Prosuct | DEMENSIONS ARE HISHAM_ODISH 2/6/06 | A 2N3251A 35C0701.DWG | A FOR THE INTENDED USE AND ASSUME ALL RISK AND FOR REFERENCE APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY, oN - MILLIMETER j JEEF MCVICKER 2/6/06 | SCALE: NTS U.O.M.: MILLIMETERS SHEET: 1 OF 2