SOLID STATE INC. = 46 FARRAND STREET BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com PMD 16K, 17K SERIES 225 WATT (20 AMP CONTINUOUS, 40 AMP PEAK) PR, ~. FEATURES e Electrical specifications guaranteed for operating junction temperature range of 0 - 200C e Guaranteed and 100% tested for Isp (Secondary Breakdown Current) insur- ing maximum performance at high energy levels e Low thermal resistance for more use- able power and lower operating temperatures e Hermetically sealed DESCRIPTION The PMD 16K Series of devices are three-terminal NPN Darlington Power Transistors. The PMD 17K Series of devices are PNP Darlington Power Transistors. These devices are monolithic epitaxial base structures with built-in base to emitter shunt resistors. The devices are CVD glass passivated to increase reliability and provide reduced high- temperature reverse leakage current. This important feature enables this series of Darlington devices to meet guaranteed operating junction temperatures of 200C. Internal diode protection (D1) of the Darlington configuration is built into the structure to limit the device power dissipa- tion during negative overshoot. PARAMETER SYMBOL | MAXIMUM UNITS Collector Emitter Voltage Veco Vdc PMD16K, 17K80 80 PMD16K, 17K100 100 Collector Base Voltage Vego Vdc PMD16K, 17K80 80 PMD16K, 17K100 100 Emitter Base Voltage Vego 5 Vde Collector Current Ic Adc Continuous 20 Peak 40 Base Current Ip 0.5 Adc Thermal Resistance Bic 0.67 C/MWatt Total Internal Power Dissipation @ T,. = 50C! Po 225 Watts Operating Junction and Ty ~65 to +200 C Storage Temperature Tst ) For operation above T, = 50C, derate @ 1.5 W/C. DEVICE SELECTION GUIDE DEVICE VOLTAGE RATING POLARITY PMD16K80 80V NPN PMD16K100 100V NPN PMD17K80 80V PNP PMD17K100 100V PNP Excellent thermal resistance junction to case (8c) provides for more useable power at lower operating temperatures. This, coupled with 100% Isp testing, in- sures optimum performance and dura- bility for DC motor control and other com- plementary Darlington applications. These Darlington devices are hermetically sealed copper/steel TO-3 packages providing high reliability and low thermal resistance.PMD 16K, 17K SERIES ELECTRICAL CHARACTERISTICS All parameters are guaranteed at T, = 0 to 200C, unless otherwise specified. Short Circuit Forward Transfer Ratio 7 Adc: Veg = 3 Vde 1 C = f = 1 MHz; Ty = 25C Parameter symbol Test Conditions Minimum Maximum Units ON CHARACTERISTICS Collector Emitter Vee (sat) lp = 10 Ade; Iz = 40 mAdc 2.0 Vde Saturation Voltage! Base Emitter Vee(on) ioe = 10 Adc; Vee = 3 Vde 2.8 Vde Jurn-on Voltage! Base Emitter Veeisat) Ip = 10 Adc; Ig = 40 mAdc 2.8 Vdc Saturation DC Current Gain' Nee lc = 10 Adc: Veg = 3 Vde PMD16K80, 100 Ty = 25C 1000 20,000 PMD17K80, 100 800 20,000 Forward Bias Secondary Is/b Vee = 30 Vde; Ty = 25C 7.5 Adc Breakdown Current 1 sec non-repetitive pulse OFF CHARACTERISTICS Collector Emitter Viaryceo log = 100 mAdc: Ty = 25C Vde Breakdown Voltage (Base Open) PMD16K, 17K80 80 PMD16K, 17K100 100 Collector Emitter Visus)cer log = 100 mAdc: Rag = 2.2kn Vde Sustaining Voltage PMD16K, 17K80 80 PMD16K, 17K100 100 Emitter Base lego Veg = 5 Vde; Ip = OA 3.0 mAdc Leakage Current Collector Emitter leer mAdc Leakage Current PMD16K, 17K80 Voe = 54 Vdc: Rep = 2.2k 7.0 PMDi6K, 17K100 Vee = 67 Vdc; Ree = 2.2kN 7.0 DYNAMIC CHARACTERISTICS Output Capacitance Cop Vog = 10 Vde; Ie = 0 Ade 400 pF f = 1 MHz: T, = 25C Small Signal Ne lc = 7 Adc: Voce = 3 Vde 300 Current Gain f = 1 kHz; Ty = 25C Common Emitter Niel | 4 (1) Pulse tested with pulse width = 300 ,S and duty cycle = 2.0%.__ PMD 16K, 17K SERIES OPERATIONAL DATA POWER DISSIPATION (WATTS) Ve (VOLTS) 240 200 160 120 80 40 3.5 3.0 2.5 2.0 1.5 1.0 0.5 POWER DERATING (PMD 16K, 17K SERIES) \ N \ 25 50 75 100 125 150 175 200 CASE TEMPERATURE (C) MEASURED BETWEEN THE TERMINALS FORWARD VOLTAGE OF D1 (PMD 16K SERIES) a4 2 4 6.810 2 4 6 810 le (AMPS) lo (AMPS) Ve (VOLTS) SAFE OPERATING AREA (PMD 16K, 17K SERIES) 40.0 20.0 de (1 sec) ie Ta = 25C 6.0 4.0 PMD 16K, 17K80 PMD 16K, 17K100 A MoO ho 1 2 4 6810 20 4060 100 20 Vee (VOLTS) FORWARD VOLTAGE OF D1 (PMD 17K SERIES) 3.5 3.0 2.5 2.0 A 1.5 | 1.0 0.5 A 2 4 6810 2 4 6 810 1; (AMPS)PMD 16K, 17K SERIES OPERATIONAL DATA ON VOLTAGE VS COLLECTOR CURRENT (PMD 16K SERIES) Ty = 25C Ic/lp = 250 VOLTS Vee (SAT) Vee (ony) Vce = 3V Voce (SAT) 2 4 6.81 2 lc (AMPS) 4 6810 20 DC COLLECTOR CURRENT GAIN VS COLLECTOR CURRENT (PMD 16K SERIES) 20,000 Voce = 3V 10,000 6,000 4,000 Ty = 200C 2,000 Jo 25C 1,000 600 400 200 100 1 2. 4 6.81 2 Ic (AMPS) 4 6810 20 ON VOLTAGE VS COLLECTOR CURRENT (PMD 17K SERIES) 3.0 Ty = 25C lc/lp = 250 2.5 2.0 Vee (SAT) VOLTS 1.5 Vee (ony: Vce = 3V 1.0 Voce (sat) 2 4 6.81 2 lc (AMPS) 4 6810 20 DC COLLECTOR CURRENT GAIN VS COLLECTOR CURRENT (PMD 17K SERIES) 20,000 Voce = 3V 10,000 6,000 4,000 Ty = 200C 2,000 u xo 1,000 600 400 200 100 1 2 4.6.81 2 lc (AMPS) 4 6810 20__PMD 16K, 17K SERIES OPERATIONAL DATA COLLECTOR SATURATION REGION COLLECTOR SATURATION REGION (PMD 16K SERIES) (PMD 17K SERIES) T, = 25C Ty = 25C 20A 15A g g 5A 5A 5 1 2 4 6810 20 40 60100 5 1 2 4 6810 20 40 60 100 Ig (MA) Is (MA) BLOCK DIAGRAMS NPN PNP COLLECTOR COLLECTOR 1v EMITTER EMITTERPMD 16K, 17K SERIES DEVICE OUTLINE O ) 0.992 MAX. / 0.157 MAX \ BOTH ENDS 0.492 R MAX. he 1.54 MAX. io (oe) cn fe oO w ~ oo oo bi NIG Roles Bottom View 2 O X Oo , 1 Base 2 Emitter Case |s Collector