1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
1.3 Applications
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 — 13 May 2014 Product data sheet
Table 1. Product overview
Type number Package PNP
complement Package
configuration
Nexperia JEITA JEDEC
PDTD113EU SOT323 SC-70 -PDTB113EU very small
PDTD113ZU PDTB113ZU
PDTD123EU PDTB123EU
PDTD123YU PDTB123YU
PDTD143EU PDTB143EU
PDTD143XU PDTB143XU
PDTD114EU PDTB114EU
500 mA output current capability 10 % resistor ratio tolerance
Built-in bias resistors AEC-Q101 qualified
Simplifies circuit design High temperature applications
up to 175 °C
Reduces component count
IC inputs control Switching loads
Cost-saving alternative to BC807 or
BC817 series transistors in digital
applications
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 2 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
1.4 Quick reference data
2. Pinning information
3. Ordering information
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base --50 V
IOoutput current --500 mA
R1 bias resistor 1 (input)
PDTD113EU 1 k
PDTD113ZU 1 k
PDTD123EU 2.2 k
PDTD123YU 2.2 k
PDTD143EU 4.7 k
PDTD143XU 4.7 k
PDTD114EU 10 k
R2 bias resistor 2 (base-emitter)
PDTD113EU 1 k
PDTD113ZU 10 k
PDTD123EU 2.2 k
PDTD123YU 10 k
PDTD143EU 4.7 k
PDTD143XU 10 k
PDTD114EU 10 k
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1input (base)
2GND (emitter)
3output (collector)
12
3
sym007
3
2
1R1
R2
Tabl e 4. Ordering information
Type number Package
Name Description Version
PDTD1xxxU series SC-70 plastic surface-mounted package; 3 leads SOT323
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 3 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
4. Marking
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 5. Marking codes
Type number Marking code[1]
PDTD113EU ZP*
PDTD113ZU ZQ*
PDTD123EU ZR*
PDTD123YU ZS*
PDTD143EU ZT*
PDTD143XU ZU*
PDTD114EU ZV*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter -50 V
VCEO collector-emitter voltage open base -50 V
VEBO emitter-base voltage open collector
PDTD113EU -10 V
PDTD113ZU - 5 V
PDTD123EU -10 V
PDTD123YU - 5 V
PDTD143EU -10 V
PDTD143XU - 7 V
PDTD114EU -10 V
VIinput voltage
PDTD113EU 10 +10 V
PDTD113ZU 5+10 V
PDTD123EU 10 +12 V
PDTD123YU 5+12 V
PDTD143EU 10 +30 V
PDTD143XU 7+30 V
PDTD114EU 10 +50 V
IOoutput current -500 mA
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 4 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Ptot total power dissipation Tamb 25 C[1] -300 mW
[2] -425 mW
Tjjunction temperature -175 C
Tamb ambient temperature 55 +175 C
Tstg storage temperature 55 +175 C
(1) FR4 PCB, 4-layer copper, standard footprint
(2) FR4 PCB, single-sided copper, standard footprint.
Fig 1. Power derating curves
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
aaa-012426
Tamb (°C)
-75 22512525
200
300
100
400
500
Ptot
(mW)
0
(1)
(2)
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction
to ambient in free air [1] --500 K/W
[2] --353 K/W
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 5 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2. T ransient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical valu e s
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Fig 3. T ransient thermal impedance from junction to ambient as a function of pulse duration for SOT323/SC-70;
typical valu e s
aaa-012062
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1 0.05
0.02 0.01
0
aaa-012063
10-5 1010-2
10-4 102
10-1 tp (s)
10-3 103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75 0.5
0.33 0.2
0.1
0.05
0.02 0.01
0
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 6 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB = 40 V; IE = 0 A - - 100 nA
VCB = 50 V; IE = 0 A - - 100 nA
ICEO collector-emitter cut-off
current VCE = 50 V; IB = 0 A - - 0.5 A
IEBO emitter-base cut-off
current VEB = 5 V; IC = 0 A
PDTD113EU --4.0 mA
PDTD113ZU --0.8 mA
PDTD123EU --2.0 mA
PDTD123YU --0.65 mA
PDTD143EU --0.9 mA
PDTD143XU --0.6 mA
PDTD114EU --0.4 mA
hFE DC current gain VCE = 5 V; IC = 50 mA
PDTD113EU 33 - -
PDTD113ZU 70 - -
PDTD123EU 40 - -
PDTD123YU 70 - -
PDTD143EU 60 - -
PDTD143XU 70 - -
PDTD114EU 70 - -
VCEsat collector-emitter
saturation voltage IC = 50 mA; IB = 2.5 mA --100 mV
VI(off) off-state input voltage VCE = 5 V; IC = 100 A
PDTD113EU 0.6 1.1 1.5 V
PDTD113ZU 0.3 0.6 1.0 V
PDTD123EU 0.6 1.1 1.8 V
PDTD123YU 0.4 0.6 1.0 V
PDTD143EU 0.6 0.9 1.5 V
PDTD143XU 0.5 0.75 1.1 V
PDTD114EU 0.6 1.0 1.5 V
VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA
PDTD113EU 1.0 1.4 1.8 V
PDTD113ZU 0.4 0.8 1.4 V
PDTD123EU 1.0 1.5 2.0 V
PDTD123YU 0.5 1.0 1.4 V
PDTD143EU 1.0 1.6 2.2 V
PDTD143XU 1.0 1.25 2.0 V
PDTD114EU 1.0 1.9 3.0 V
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 7 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
[1] Characteristics of built-in transistor.
R1 bias resistor 1 (input)
PDTD113EU 0.7 1.0 1.3 k
PDTD113ZU 0.7 1.0 1.3 k
PDTD123EU 1.54 2.2 2.86 k
PDTD123YU 1.54 2.2 2.86 k
PDTD143EU 3.3 4.7 6.1 k
PDTD143XU 3.3 4.7 6.1 k
PDTD114EU 7.0 10 13 k
R2/R1 bias resistor ratio
PDTD113EU 0.9 1.0 1.1
PDTD113ZU 9.0 10 11
PDTD123EU 0.9 1.0 1.1
PDTD123YU 4.1 4.55 5.0
PDTD143EU 0.9 11.1
PDTD143XU 1.91 2.13 2.34
PDTD114EU 0.9 1.0 1.1
Cccollector capacit ance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz - 7 - pF
fTtransition frequency VCE = 5 V; IC = 50 mA;
f = 100 MHz [1] -225 -MHz
Table 8. Characteristics …continued
Tamb = 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 8 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 4. PDTD113EU: DC current gain as a function of
collector current; typical valu es Fig 5. PDTD113EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 6. PDTD113EU: On-state input voltage as a
function of collector current; typical values Fig 7. PDTD113EU: Off-state input voltage as a
function of collector current; typical values
006aaa310
10
1
10
2
10
3
h
FE
10
−1
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
006aaa311
IC (mA)
10 103
102
10−1
VCEsat
(V)
10−2
(1)
(2)
(3)
006aaa312
IC (mA)
10−1103
102
110
1
10
VI(on)
(V)
10−1
(1)
(2)
(3)
IC (mA)
10−1101
006aaa313
1
10
VI(off)
(V)
10−1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 9 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Tamb = 25 C f = 1 MHz; Tamb = 25 C
Fig 8. PDTD113EU: Collector c urrent as a function of
collector -em itter voltage; ty pic a l values Fig 9. PDTD113EU: Colle ctor capacitance as a
function of collector-base voltage; typical
values
VCE = 5 V; Tamb = 25 C
Fig 10. PDTD113EU: Transition frequency as a function of co llector current; typical values of built-in trans istor
VCE (V)
054231
aaa-012430
0.2
0.3
0.1
0.4
0.5
IC
(A)
0
IB = 0.85 mA
1
1.15
1.3
1.45
1.6
1.9
2.2
1.75
2.05
VCB (V)
0504020 3010
aaa-012431
10
15
5
20
25
Cc
(pF)
0
aaa-012066
102
10
103
fT
(MHz)
1
IC (mA)
10-1 103
102
110
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 10 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 11. PDTD113ZU: DC current gain as a function of
collector current; typical values Fig 12. PDTD113ZU: Collector-emitter saturation
voltage as a function of collector current;
typical values
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 13. PDTD113ZU: On-state input voltage as a
function of collector current; typical values Fig 14. PDTD113ZU: Off-state input voltage as a
function of collector current; typical values
006aaa314
102
10
103
hFE
1
IC (mA)
10−1103
102
110
(1)
(2)
(3)
006aaa315
IC (mA)
110
3
102
10
10−1
VCEsat
(V)
10−2
(1)
(2)
(3)
006aaa316
IC (mA)
10−1103
102
110
1
10
VI(on)
(V)
10−1
(1)
(2)
(3)
006aaa317
IC (mA)
10−1101
1
VI(off)
(V)
10−1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 11 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Tamb = 25 C f = 1 MHz; Tamb = 25 C
Fig 15. PDTD113ZU: Collector current as a function of
collector -em itter voltage; ty pic a l values Fig 16. PDTD113ZU: Collector capacitanc e as a
function of collector-base voltage; typical
values
VCE = 5 V; Tamb = 25 C
Fig 17. PDTD113ZU: Transition frequency as a function of collector current; typical values of built-in transistor
VCE (V)
054231
aaa-012432
0.2
0.3
0.1
0.4
0.5
IC
(A)
0IB = 0.17 mA
0.34
0.51
0.68
0.85
1.02
1.36
1.7
1.19
1.53
VCB (V)
0504020 3010
aaa-012437
10
15
5
20
25
Cc
(pF)
0
aaa-012066
102
10
103
fT
(MHz)
1
IC (mA)
10-1 103
102
110
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 12 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 18. PDTD123EU: DC curr ent gain as a function of
collector current; typical valu es Fig 19. PDTD123EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 20. PDTD123EU: On-state input voltage as a
function of collector current; typical values Fig 21. PDTD123EU: Off-state input voltage as a
function of collector current; typical values
006aaa318
10
1
10
2
10
3
h
FE
10
−1
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
aaa-012447
IC (mA)
110
3
102
10
10-1
VCEsat
(V)
10-2
(1)
(2)
(3)
006aaa320
IC (mA)
10−1103
102
110
1
10
VI(on)
(V)
10−1
(1)
(2)
(3)
IC (mA)
10−1101
006aaa321
1
10
VI(off)
(V)
10−1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 13 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Tamb = 25 C f = 1 MHz; Tamb = 25 C
Fig 22. PDTD123EU: Collector cur rent as a functio n of
collector -em itter voltage; ty pic a l values Fig 23. PDTD123EU : Co llector capacitance as a
function of collector-base voltage; typical
values
VCE = 5 V; Tamb = 25 C
Fig 24. PDTD123EU: Transition frequency as a function of collector current; typical values of built-in transistor
VCE (V)
054231
aaa-012433
0.2
0.3
0.1
0.4
0.5
IC
(A)
0
IB = 0.55 mA
0.7
0.85
1
1.15
1.3
1.6
1.9
1.45
1.75
VCB (V)
0504020 3010
aaa-012438
10
15
5
20
25
Cc
(pF)
0
aaa-012066
102
10
103
fT
(MHz)
1
IC (mA)
10-1 103
102
110
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 14 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 25. PDTD123YU: DC curr ent gain as a function of
collector current; typical valu es Fig 26. PDTD123YU: Collector-emitter saturation
voltage as a function of collector current;
typical values
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 27. PDTD123YU: On-state input voltage as a
function of collector current; typical values Fig 28. PDTD123YU: Off-state input voltage as a
function of collector current; typical values
006aaa322
102
10
103
hFE
1
IC (mA)
10−1103
102
110
(1)
(2)
(3)
aaa-012448
IC (mA)
110
3
102
10
10-1
VCEsat
(V)
10-2
(1)
(2)
(3)
006aaa324
IC (mA)
10−1103
102
110
1
10
VI(on)
(V)
10−1
(1)
(2)
(3)
IC (mA)
10−1101
1
10
VI(off)
(V)
10−1
006aaa325
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 15 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Tamb = 25 C f = 1 MHz; Tamb = 25 C
Fig 29. PDTD123YU: Collector cur rent as a functio n of
collector -em itter voltage; ty pic a l values Fig 30. PDTD123YU : Co llector capacitance as a
function of collector-base voltage; typical
values
VCE = 5 V; Tamb = 25 C
Fig 31. PDTD123YU: Transition frequency as a function of collector current; typical values of built-in transistor
VCE (V)
054231
aaa-012434
0.2
0.3
0.1
0.4
0.5
IC
(A)
0
IB = 0.15 mA
0.3
0.45
0.6
0.75
0.9
1.2
1.05
1.35
1.5
VCB (V)
0504020 3010
aaa-012439
10
15
5
20
25
Cc
(pF)
0
aaa-012066
102
10
103
fT
(MHz)
1
IC (mA)
10-1 103
102
110
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 16 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 32. PDTD143EU: DC curr ent gain as a function of
collector current; typical valu es Fig 33. PDTD143EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 34. PDTD143EU: On-state input voltage as a
function of collector current; typical values Fig 35. PDTD143EU: Off-state input voltage as a
function of collector current; typical values
aaa-012442
102
10
103
hFE
1
IC (mA)
10-1 103
102
110
(1)
(2)
(3)
aaa-012444
IC (mA)
110
3
102
10
10-1
VCEsat
(V)
10-2
(1)
(2)
(3)
aaa-012449
10
1
102
VI(on)
(V)
10-1
IC (mA)
10-1 103
102
110
(1)
(2)
(3)
IC (mA)
10-1 101
aaa-012573
1
10
VI(off)
(V)
10-1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 17 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Tamb = 25 C f = 1 MHz; Tamb = 25 C
Fig 36. PDTD143EU: Collector cur rent as a functio n of
collector -em itter voltage; ty pic a l values Fig 37. PDTD143EU : Co llector capacitance as a
function of collector-base voltage; typical
values
VCE = 5 V; Tamb = 25 C
Fig 38. PDTD143EU: Transition frequency as a function of collector current; typical values of built-in transistor
VCE (V)
054231
aaa-012435
0.2
0.3
0.1
0.4
0.5
IC
(A)
0
IB = 0.35 mA
1.55
0.5
1.1
0.95
0.8
1.4
1.7
0.65
1.25
VCB (V)
0504020 3010
aaa-012440
8
12
4
16
20
Cc
(pF)
0
aaa-012066
102
10
103
fT
(MHz)
1
IC (mA)
10-1 103
102
110
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 18 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 39. PDTD143XU: DC curr ent gain as a function of
collector current; typical valu es Fig 40. PDTD143XU: Collector-emitter saturation
voltage as a function of collector current;
typical values
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 41. PDTD143XU: On-state input voltage as a
function of collector current; typical values Fig 42. PDTD143XU: Off-state input voltage as a
function of collector current; typical values
aaa-012441
102
10
103
hFE
1
IC (mA)
10-1 103
102
110
(1)
(2)
(3)
aaa-012445
IC (mA)
110
3
102
10
10-1
VCEsat
(V)
10-2
(1)
(2)
(3)
aaa-012450
10
1
102
VI(on)
(V)
10-1
IC (mA)
10-1 103
102
110
(1)
(2)
(3)
IC (mA)
10-1 101
aaa-012574
1
10
VI(off)
(V)
10-1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 19 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Tamb = 25 C f = 1 MHz; Tamb = 25 C
Fig 43. PDTD143XU: Collector cur rent as a functio n of
collector -em itter voltage; ty pic a l values Fig 44. PDTD143XU : Co llector capacitance as a
function of collector-base voltage; typical
values
VCE = 5 V; Tamb = 25 C
Fig 45. PDTD143XU: Transition frequency as a function of collector current; typical values of built-in transistor
VCE (V)
054231
aaa-012071
0.2
0.3
0.1
0.4
0.5
IC
(A)
0
IB = 0.25 mA
0.4
0.55
0.7
0.85
1.0
1.15
1.3
1.45
1.6
VCB (V)
0504020 3010
aaa-012072
8
12
4
16
20
Cc
(pF)
0
aaa-012066
102
10
103
fT
(MHz)
1
IC (mA)
10-1 103
102
110
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 20 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
VCE = 5 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
IC/IB = 20
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 46. PDTD1 14EU: DC current gain as a fu nction of
collector current; typical valu es Fig 47. PDTD114EU: Collector-emitter saturation
voltage as a function of collector current;
typical values
VCE = 0.3 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 48. PDT D114EU: On-state input voltage as a
function of collector current; typical values Fig 49. PDTD114EU: Off-state input voltage as a
function of collector current; typical values
aaa-012443
102
10
103
hFE
1
IC (mA)
10-1 103
102
110
(1)
(2)
(3)
aaa-012446
IC (mA)
110
3
102
10
10-1
VCEsat
(V)
10-2
(1)
(2)
(3)
aaa-012451
10
1
102
VI(on)
(V)
10-1
IC (mA)
10-1 103
102
110
(1)
(2)
(3)
IC (mA)
10-1 101
aaa-012575
1
10
VI(off)
(V)
10-1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 21 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Tamb = 25 C f = 1 MHz; Tamb = 25 C
Fig 50. PDTD1 14EU: Collector current as a function of
collector -em itter voltage; ty pic a l values Fig 51. PDTD114EU: Collector capac itance as a
function of collector-base voltage; typical
values
VCE = 5 V; Tamb = 25 C
Fig 52. PDTD114EU: Transition frequency as a function of co llector current; typical values of built-in trans istor
VCE (V)
054231
aaa-012073
0.2
0.3
0.1
0.4
0.5
IC
(A)
0
IB = 0.35 mA
0.5
0.65
0.8
0.95
1.1
1.25
1.4
1.55
1.7
VCB (V)
0504020 3010
aaa-012074
4
6
2
8
10
Cc
(pF)
0
aaa-012066
102
10
103
fT
(MHz)
1
IC (mA)
10-1 103
102
110
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 22 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 53. Package outline PDTD1xxxU series (SOT323/SC-70)
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0 1.35
1.15
1.3
0.4
0.3 0.25
0.10
12
3
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 23 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
10. Soldering
Dimensions in mm
Fig 54. Reflow soldering footprint PDTD1xxxU series (SOT323/SC-70)
Dimensions in mm
Fig 55. Wave soldering footprint PDTD1xxxU series (SOT323/SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 24 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTD1XXXU_SER v.1 20140513 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 25 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to off er functions and qualities beyon d those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an inf ormation
source outside of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - without limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in perso nal injury, death or severe propert y or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and t her efo re su ch inclu si on a nd/or use is at the cu stome r's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty tha t such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with t heir
applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of
commercial sale, as published at http://www.nexperia.com/profile/terms
unless otherwise agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and conditions of the
respective agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
© Nexperia B.V. 2017. All rights reserved
PDTD1XXXU_SER All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 13 May 2014 26 of 27
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
No offer to sell or license — Nothing in this document may be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the g rant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Nexperia PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 22
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 22
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 22
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 24
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 25
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 25
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
13 Contact information. . . . . . . . . . . . . . . . . . . . . 26
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
13 May 2014
