March 2006 Rev 1 1/8
8
STTH9012TV
Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits
■Ultrafast, soft recovery
■Very low conduction and switching losses
■High frequency and/or high pulsed current
operation
■High reverse voltage capability
■High junction temperature
■Insulated package:
Electrical insulation = 2500 VRMS
Capacitance = 45 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
IF(AV) 2 x 45 A
VRRM 1200 V
Tj150° C
VF (typ) 1.20 V
trr (typ) 50 ns
Part Number Marking
STTH9012TV1 STTH9012TV1
STTH9012TV2 STTH9012TV2
K2
K1
A2
A1 K2
K1
A2
A1
A1
A2
K1
K2
A1
A2
K1
K2
STTH9012TV2
STTH9012TV1
ISOTOP
www.st.com
Characteristics STTH9012TV
2/8
1 Characteristics
When the diodes are used simultaneously:
∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 1.40 x IF(AV) + 0.0089 IF2(RMS)
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1200 V
IF(RMS) RMS forward current 150 A
IF(AV) Average forward current, δ = 0.5 Tc = 75° C per diode 45 A
IFRM Repetitive peak forward current tp = 5 µs, F = 5 kHz square 600 A
IFSM
Surge non repetitive forward
current tp = 10 ms Sinusoidal 420 A
Tstg Storage temperature range -65 to + 150 °C
TjMaximum operating junction temperature 150 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
Rth(j-c) Junction to case Per diode 0.74
°C/WTotal 0.42
Rth(c) Coupling thermal resistance 0.1
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
IR(1) Reverse leakage current Tj = 25° C VR = VRRM
30 µA
Tj = 125° C 30 300
VF(2) Forward voltage drop
Tj = 25° C
IF = 45 A
2.10
VTj = 125° C 1.25 1.90
Tj = 150° C 1.20 1.80
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
STTH9012TV Characteristics
3/8
Table 4. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
trr Reverse recovery time
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C 125
ns
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C 63 85
IF = 1 A, dIF/dt = -200 A/µs,
VR = 30 V, Tj = 25° C 50 70
IRM Reverse recovery current IF = 45 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C 32 45 A
S Softness factor IF = 45 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C 1
tfr Forward recovery time IF = 45 A dIF/dt = 100 A/µs
VFR = 1.5 x VFmax, Tj = 25° C 700 ns
VFP Forward recovery voltage IF = 45 A, dIF/dt = 100 A/µs,
Tj = 25° C 4.5 V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
P(W)
0
10
20
30
40
50
60
70
80
90
100
110
0 102030405060
δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1
T
δ=tp/T tp
I (A)
F(AV)
I (A)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Tj= 25 °C
(Maximum values)
Tj=150°C
(Maximum values)
Tj=150°C
(Maximum values)
Tj=150°C
(Typical values)
Tj=150°C
(Typical values)
V (V)
FM
Characteristics STTH9012TV
4/8
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
t (s)
p
I (A)
RM
0
10
20
30
40
50
60
70
80
0 50 100 150 200 250 300 350 400 450 500
VR=600V
Tj=125°C IF= 2 x IF(AV)
IF= IF(AV)
IF= IF(AV)
IF=0.5 x IF(AV)
IF=0.5 x IF(AV)
dI /dt(A/µs)
F
Figure 5. Reverse recovery time versus
dIF/dt (typical values)
Figure 6. Reverse recovery charges versus
dIF/dt (typical values)
t (ns)
rr
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350 400 450 500
VR=600V
Tj=125°C
IF=0.5 x IF(AV)
IF= 2 x IF(AV)
IF=I
F(AV)
IF=I
F(AV)
dI /dt(A/µs)
F
Q (µC)
rr
0
2
4
6
8
10
12
0 50 100 150 200 250 300 350 400 450 500
IF=0.5 x IF(AV)
IF= IF(AV)
IF= 2 x IF(AV)
VR=600V
Tj=125°C
dI /dt(A/µs)
F
Figure 7. Softness factor versus
dIF/dt (typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
S factor
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0 50 100 150 200 250 300 350 400 450 500
IF= 2 x IF(AV)
VR=600V
Tj=125°C
dI /dt(A/µs)
F0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
25 50 75 100 125
IRM
QRR
Sfactor
IF= IF(AV)
VR=600V
Reference: Tj=125°C
tRR
tRR
T (°C)
j
STTH9012TV Characteristics
5/8
Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus dIF/dt
(typical values)
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
V (V)
FP
0
5
10
15
20
25
0 100 200 300 400 500
IF= IF(AV)
Tj=125°C
dI /dt(A/µs)
F
t (ns)
fr
200
400
600
800
1000
1200
1400
0 100 200 300 400 500
IF= IF(AV)
VFR = 1.5 x VFmax.
Tj=125°C
dI /dt(A/µs)
F
C(pF)
10
100
1000
1 10 100 1000
F=1MHz
Vosc=30mVRMS
Tj=25°C
V (V)
R
Package information STTH9012TV
6/8
2 Package information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Table 5. ISOTOP dimensions
REF.
DIMENSIONS
Millimeters Inches
Min. Max Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
F1 F
D1
G
DS
B
E1
G1
ØP
P1
E
E2
G2 C
C2
A1
A
STTH9012TV Ordering information
7/8
3 Ordering information
4 Revision history
Part Number Marking Package Weight Base qty Delivery mode
STTH9012TV1 STTH9012TV1 ISOTOP 27 g 10 Tube
STTH9012TV2 STTH9012TV2 ISOTOP 27 g 10 Tube
Date Revision Description of Changes
02-Mar-2006 1 First issue.
STTH9012TV
8/8
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
