BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor S9014
Document number: BL/SSSTC083 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 B45 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 5
V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 μA
Collector cut-off current ICEO VCE=35V,IB=0 B 0.1 μA
Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA
DC current gain hFE VCE=5V,IC=1mA 200 1000
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA B 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 5mA B 1 V
Transition frequency fT
VCE=6V, IC= 20mA
f=30MHz 150 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 200-450 450-1000