1
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
FEATURES:
256 x 18-bit organization array (IDT72205LB)
512 x 18-bit organization array (IDT72215LB)
1,024 x 18-bit organization array (IDT72225LB)
2,048 x 18-bit organization array (IDT72235LB)
4,096 x 18-bit organization array (IDT72245LB)
10 ns read/write cycle time
Empty and Full flags signal FIFO status
Easily expandable in depth and width
Asynchronous or coincident read and write clocks
Programmable Almost-Empty and Almost-Full flags with
default settings
Half-Full flag capability
Dual-Port zero fall-through time architecture
Output enable puts output data bus in high-impedance
state
High-performance submicron CMOS technology
Available in a 64-lead thin quad flatpack (TQFP/STQFP)
and plastic leaded chip carrier (PLCC)
Industrial temperature range (–40
°
C to +85
°
C) is available
Integrated Device Technology, Inc.
IDT72205LB
IDT72215LB
IDT72225LB
IDT72235LB
IDT72245LB
CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18,
2,048 x 18 and 4,096 x 18
SyncFIFO is a trademark and the IDT logo is a registered trademark of Integrated Device Technology, Inc
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES MAY 2000
©2000 Integrated Device Technology, Inc. DSC-2766/-
are applicable for a wide variety of data buffering needs, such
as optical disk controllers, Local Area Networks (LANs), and
interprocessor communication.
These FIFOs have 18-bit input and output ports. The input
port is controlled by a free-running clock (WCLK), and an input
enable pin (
WEN
). Data is read into the synchronous FIFO on
every clock when
WEN
is asserted. The output port is controlled
by another clock pin (RCLK) and another enable pin (
REN
). The
read clock can be tied to the write clock for single clock
operation or the two clocks can run asynchronous of one
another for dual-clock operation. An Output Enable pin (
OE
) is
provided on the read port for three-state control of the output.
The synchronous FIFOs have two fixed flags, Empty (
EF
) and
Full (
FF
), and two programmable flags, Almost-Empty (
PAE
)
and Almost-Full (
PAF
). The offset loading of the programmable
flags is controlled by a simple state machine, and is initiated by
asserting the Load pin (
LD
). A Half-Full flag (
HF
) is available
when the FIFO is used in a single device configuration.
These devices are depth expandable using a Daisy-Chain
technique. The XI and
XO
pins are used to expand the FIFOs.
In depth expansion configuration,
FL
is grounded on the first
device and set to HIGH for all other devices in the Daisy Chain.
The IDT72205LB/72215LB/72225LB/72235LB/72245LB is
fabricated using IDT’s high-speed submicron CMOS technol-
ogy.
1
FUNCTIONAL BLOCK DIAGRAM
INPUT REGISTER
OUTPUT REGISTER
RAM ARRAY
256 x 18, 512 x 18
1,024 x 18, 2,048 x 18
4,096 x 18
OFFSET REGISTER
FLAG
LOGIC /( )
READ POINTER
READ CONTROL
LOGIC
WRITE CONTROL
LOGIC
WRITE POINTER
EXPANSION LOGIC
RESET LOGIC
WCLK D0-D17
( )/
RCLK
Q0-Q17
2766 drw 01
DESCRIPTION:
The IDT72205LB/72215LB/72225LB/72235LB/72245LB
are very high-speed, low-power First-In, First-Out (FIFO)
memories with clocked read and write controls. These FIFOs
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
2
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
PIN CONFIGURATIONS
PLCC (J68-1, order code: J)
TOP VIEW
TQFP (PN64-1, order code: PF)
STQFP (PP64-1, order code: TF)
TOP VIEW
18
26
19
20
22
23
24
25
21
10
11
12
13
14
15
16
17
56
44
45
46
47
48
49
50
51
52
53
54
55
57
58
59
60 V
CC
Q
14
Q
13
GND
Q
12
Q
11
V
CC
Q
10
Q
9
GND
Q
8
Q
7
V
CC
Q
6
Q
5
GND
Q
4
D
14
D
13
D
12
D
11
D
10
D
9
V
CC
D
8
GND
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
1
98765432 6867666564636261
2728293031323334353637383940414243
2766 drw 02
D
15
D
16
V
CC
D
17
GND
RCLK
GND
V
CC
Q
17
Q
16
GND
Q
15
WCLK
V
CC
/
Q
0
Q
1
GND
Q
2
Q
3
V
CC
PIN 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
D
16
D
17
GND
RCLK
V
CC
GND
Q
17
Q
16
GND
Q
15
V
CC
Q
14
Q
13
GND
Q
12
Q
11
V
CC
Q
10
Q
9
GND
Q
8
Q
7
Q
6
Q
5
GND
Q
4
V
CC
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
D
15
D
14
D
13
D
12
D
11
D
10
D
9
D
8
D
7
D
6
D
5
D
4
D
3
D
2
D
1
D
0
WCLK
V
CC
/
Q
0
Q
1
GND
Q
2
Q
3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
2766 drw 03
3
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
Symbol Name I/O Description
D0–D17 Data Inputs I Data inputs for a 18-bit bus.
RS
Reset I When
RS
is set LOW, internal read and write pointers are set to the first location of the
RAM array,
FF
and
PAF
go HIGH, and
PAE
and
EF
go LOW. A reset is required before an
initial WRITE after power-up.
WCLK Write Clock I When
WEN
is LOW, data is written into the FIFO on a LOW-to-HIGH transition of WCLK,
if the FIFO is not full.
WEN
Write Enable I When
WEN
is LOW and
LD
is HIGH, data is written into the FIFO on every LOW-to-HIGH
transition of WCLK. When
WEN
is HIGH, the FIFO holds the previous data. Data will not be
written into the FIFO if the
FF
is LOW.
RCLK Read Clock I When
REN
is LOW, data is read from the FIFO on a LOW-to-HIGH transition of RCLK, if the
FIFO is not empty.
REN
Read Enable I When
REN
is LOW and
LD
is HIGH, data is read from the FIFO on every LOW-to-HIGH
transition of RCLK. When
REN
is HIGH, the output register holds the previous data. Data will
not be read from the FIFO if the
EF
is LOW.
OE
Output Enable I When
OE
is LOW, the data output bus is active. If
OE
is HIGH, the output data bus will
be in a high-impedance state.
LD
Load I When
LD
is LOW, data on the inputs D0–D11 is written to the offset and depth registers
on the LOW-to-HIGH transition of the WCLK, when
WEN
is LOW. When
LD
is LOW,
data on the outputs Q0–Q11 is read from the offset and depth registers on the LOW-to-
HIGH transition of the RCLK, when
REN
is LOW.
FL
First Load I In the single device or width expansion configuration,
FL
is grounded. In the depth expansion
configuration,
FL
is grounded on the first device (first load device) and set to HIGH for all other
devices in the Daisy Chain.
WXI
Write Expansion I In the single device or width expansion configuration,
WXI
is grounded. In the
depth
expansion configuration,
WXI
is connected to
WXO
(Write Expansion Out) of the previous device.
RXI
Read Expansion I In the single device or width expansion configuration,
RXI
is grounded. In the
depth expansion
configuration,
RXI
is connected to
RXO
(Read Expansion Out) of the previous device.
FF
Full Flag O When
FF
is LOW, the FIFO is full and further data writes into the input are inhibited. When
FF
is HIGH, the FIFO is not full.
FF
is synchronized to WCLK.
EF
Empty Flag O When
EF
is LOW, the FIFO is empty and further data reads from the output are inhibited.
When
EF
is HIGH, the FIFO is not empty.
EF
is synchronized to RCLK.
PAE
Programmable O When
PAE
is LOW, the FIFO is almost empty based on the offset programmed into the
Almost-Empty Flag FIFO. The default offset at reset is 31 from empty for IDT72205LB, 63 from empty for
IDT72215LB, and 127 from empty for IDT72225LB/72235LB/72245LB.
PAF
Programmable O When
PAF
is LOW, the FIFO is almost full based on the offset programmed into the FIFO.
Almost-Full Flag The default offset at reset is 31 from full for IDT72205LB, 63 from full for IDT72215LB, and
127 from full for IDT72225LB/72235LB/72245LB.
WXO
/
HF
Write Expansion O In the single device or width expansion configuration, the device is more than half full
Out/Half-Full Flag when
HF
is LOW. In the depth expansion configuration, a pulse is sent from
WXO
to
WXI
of the next device when the last location in the FIFO is written.
RXO
Read Expansion O In the depth expansion configuration, a pulse is sent from
RXO
to
RXI
of the next device
Out when the last location in the FIFO is read.
Q0–Q17 Data Outputs O Data outputs for a 18-bit bus.
VCC Power +5V power supply pins.
GND Ground Eight ground pins for the PLCC and seven pins for the TQFP/STQFP.
PIN DESCRIPTION
4
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
RECOMMENDED DC
OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
VCC Supply Voltage 4.5 5.0 5.5 V
Com'l/Ind'l
GND Supply Voltage 0 0 0 V
VIH Input High Voltage 2.0 V
Com'l/Ind'l
VIL(1) Input Low Voltage 0.8 V
Com'l/Ind'l
TA
Operating Temperature
0—70°C
Commercial
TA
Operating Temperature
–40 85 °C
Industrial
NOTE: 2766 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol Rating Com'l & Ind'l Unit
VTERM Terminal Voltage –0.5 to +7.0 V
with respect to GND
TSTG Storage –55 to +125 °C
Temperature
IOUT DC Output Current –50 to +50 mA
Symbol Parameter(1) Conditions Max. Unit
CIN(2) Input VIN = 0V 10 pF
Capacitance
COUT(1,2) Output VOUT = 0V 10 pF
Capacitance
CAPACITANCE (TA = +25°C, f = 1.0MHz)
NOTES: 2766 tbl 05
1. With output deselected, (
OE
VIH).
2. Characterized values, not currently tested.
AC TEST CONDITIONS
Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 3ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
Output Load See Figure 1
2766 tbl 06
NOTE: 2766 tbl 03
1. 1.5V undershoots are allowed for 10ns once per cycle.
IDT72205LB
IDT72215LB
IDT72225LB
IDT72235LB
IDT72245LB
Commercial and Industrial(1)
tCLK = 10, 15, 25 ns
Symbol Parameter Min. Typ. Max. Unit
ILI(2) Input Leakage Current (any input) –1 1 µA
ILO(3) Output Leakage Current –10 10 µA
VOH Output Logic “1” Voltage, IOH = –2 mA 2.4 V
VOL Output Logic “0” Voltage, IOL = 8 mA 0.4 V
ICC1(4,5,6) Active Power Supply Current 60 mA
ICC2(4,7) Standby Current 5 mA
DC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Industrial: VCC = 5V ± 10%, TA = –40°C to +85°C )
NOTES:
1. Industrial temperature range product for the 15ns and the 25 ns speed grade is available as a standard device.
2. Measurements with 0.4 VIN VCC.
3.
OE
VIH, 0.4 VOUT VCC.
4. Tested with outputs open (IOUT = 0).
5. RCLK and WCLK toggle at 20 MHZ and data inputs switch at 10 MHz.
6. For the 72205/72215/72225 the typical ICC1 = 1.81 + 1.12*fS + 0.02*CL*fS (in mA);
for the 72235/72245 the typical ICC1 = 2.85 + 1.30*fS + 0.02*CL*fS (in mA).
These equations are valid under the following conditions:
VCC = 5V, TA = 25°C, fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fS/2, CL = capacitive load (in pF).
7. All Inputs = VCC - 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.
2766 tbl 04
5
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
NOTES:
1. Industrial temperature range is available as standard product for the 15ns
and the 25ns speed grade.
2. Pulse widths less than minimum values are not allowed.
3. Values guaranteed by design, not currently tested.
2766 tbl 07
AC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Industrial: VCC = 5V ± 10%, TA = –40°C to +85°C)
Commercial Com'l & Ind'l(1)
72205LB10 72205LB15 72205LB25
72215LB10 72215LB15 72215LB25
72225LB10 72225LB15 72225LB25
72235LB10 72235LB15 72235LB25
72245LB10 72245LB15 72245LB25
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
fSClock Cycle Frequency 100 66.7 40 MHz
tAData Access Time 2 6.5 2 10 2 15 ns
tCLK Clock Cycle Time 10 15 25 ns
tCLKH Clock HIGH Time 4.5 6 10 ns
tCLKL Clock LOW Time 4.5 6 10 ns
tDS Data Set-up Time 3—4—6—ns
t
DH Data Hold Time 0—1—1— ns
t
ENS Enable Set-up Time 3—4—6—ns
t
ENH Enable Hold Time 0—1—1—ns
t
RS Reset Pulse Width(2) 10 15 25 ns
tRSS Reset Set-up Time 8 10 15 ns
tRSR Reset Recovery Time 8 10 15 ns
tRSF Reset to Flag and Output Time 15 20 25 ns
tOLZ Output Enable to Output in Low-Z(3) 0—0—0—ns
t
OE Output Enable to Output Valid 3638312ns
t
OHZ Output Enable to Output in High-Z(3) 3638312ns
t
WFF Write Clock to Full Flag 6.5 10 15 ns
tREF Read Clock to Empty Flag 6.5 10 15 ns
tPAF Clock to Programmable Almost-Full 17 24 26 ns
Flag
tPAE Clock to Programmable Almost-Empty 17 24 26 ns
Flag
tHF Clock to Half-Full Flag 17 24 26 ns
tXO Clock to Expansion Out 6.5 10 15 ns
tXI Expansion In Pulse Width 3 6.5 10 ns
tXIS Expansion In Set-Up Time 3.5 5 10 ns
tSKEW1 Skew time between Read Clock & 5—6—10ns
Write Clock for Full Flag
tSKEW2 Skew time between Read Clock & 5—6—10ns
Write Clock for Empty Flag
Figure 1. Output Load
* Includes jig and scope capacitances.
30pF*
1.1K
5V
680
D.U.T.
2766 drw 04
6
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
LD WEN
WCLK Selection
0 0 Writing to offset registers:
Empty Offset
Full Offset
0 1 No Operation
1 0 Write Into FIFO
1 1 No Operation
NOTE: 2766 tbl 08
1. The same selection sequence applies to reading from the registers.
REN
is enabled and read is performed on the LOW-to-HIGH transition of
RCLK. Figure 2. Write Offset Register
NOTE:
1. Any bits of the offset register not being programmed should be set to zero.
Figure 3. Offset Register Location and Default Values
EMPTY OFFSET REGISTER
17 11 0
001FH (72205) 003FH (72215):
007FH (72225/72235/72245)
FULL OFFSET REGISTER
17 11 0
DEFAULT VALUE
DEFAULT VALUE
001FH (72205) 003FH (72215):
007FH (72225/72235/72245)
2766 drw 05
SIGNAL DESCRIPTIONS:
INPUTS:
DATA IN (D0 - D17)
Data inputs for 18-bit wide data.
CONTROLS:
RESET (
RSRS
RSRS
RS
)
Reset is accomplished whenever the Reset (
RS
) input is
taken to a LOW state. During reset, both internal read and
write pointers are set to the first location. A reset is required
after power-up before a write operation can take place. The
Full Flag (
FF
), Half-Full Flag (
HF
) and Programmable Almost-
Full Flag (
PAF
) will be reset to HIGH after tRSF. The Empty
Flag (
EF
) and Programmable Almost-Empty Flag (
PAE
) will be
reset to LOW after tRSF. During reset, the output register is
initialized to all zeros and the offset registers are initialized to
their default values.
WRITE CLOCK (WCLK)
A write cycle is initiated on the LOW-to-HIGH transition of the
write clock (WCLK). Data set-up and hold times must be met with
respect to the LOW-to-HIGH transition of the write clock (WCLK).
The write and read clocks can be asynchronous or coincident.
WRITE ENABLE (
WENWEN
WENWEN
WEN
)
When the
WEN
input is LOW and
LD
input is HIGH, data
may be loaded into the FIFO RAM array on the rising edge of
every WCLK cycle if the device is not full. Data is stored in the
RAM array sequentially and independently of any ongoing
read operation.
When
WEN
is HIGH, no new data is written in the RAM
array on each WCLK cycle.
To prevent data overflow,
FF
will go LOW, inhibiting further
write operations. Upon the completion of a valid read cycle,
FF
will go HIGH allowing a write to occur. The
FF
flag is updated on
the rising edge of WCLK.
WEN
is ignored when the FIFO is full.
READ CLOCK (RCLK)
Data can be read on the outputs on the LOW-to-HIGH transition
of the read clock (RCLK), when Output Enable (
OE
) is set LOW.
The write and read clocks can be asynchronous or coincident.
READ ENABLE (
RENREN
RENREN
REN
)
When Read Enable is LOW and
LD
input is HIGH, data is
loaded from the RAM array into the output register on the
rising edge of every RCLK cycle if the device is not empty.
When the
REN
input is HIGH, the output register holds the
previous data and no new data is loaded into the output
register. The data outputs Q0-Qn maintain the previous data
value.
Every word accessed at Qn, including the first word written
to an empty FIFO, must be requested using
REN
. When the
last word has been read from the FIFO, the Empty Flag (
EF
)
will go LOW, inhibiting further read operations.
REN
is ignored
when the FIFO is empty. Once a write is performed,
EF
will go
HIGH allowing a read to occur. The
EF
flag is updated on the
rising edge of RCLK.
OUTPUT ENABLE (
OEOE
OEOE
OE
)
When Output Enable (
OE
) is enabled (LOW), the parallel
output buffers receive data from the output register. When
OE
is disabled (HIGH), the Q output data bus is in a high-
impedance state.
LOAD (
LDLD
LDLD
LD
)
The IDT72205LB/72215LB/72225LB/72235LB/72245LB
devices contain two 12-bit offset registers with data on the
inputs, or read on the outputs. When the Load (
LD
) pin is set
LOW and
WEN
is set LOW, data on the inputs D0-D11 is
written into the Empty offset register on the first LOW-to-HIGH
transition of the write clock (WCLK). When the
LD
pin and
(
WEN
) are held LOW then data is written into the Full offset
register on the second LOW-to-HIGH transition of the write
clock (WCLK). The third transition of the write clock (WCLK)
again writes to the Empty offset register.
However, writing all offset registers does not have to occur
at one time. One or two offset registers can be written and then
by bringing the
LD
pin HIGH, the FIFO is returned to normal
read/write operation. When the LD pin is set LOW, and
WEN
is LOW, the next offset register in sequence is written.
7
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
When the
LD
pin is LOW and
WEN
is HIGH, the WCLK input
is disabled; then a signal at this input can neither increment the
write offset register pointer, nor execute a write.
The contents of the offset registers can be read on the
output lines when the
LD
pin is set LOW and
REN
is set LOW;
then, data can be read on the LOW-to-HIGH transition of the
read clock (RCLK). The act of reading the control registers
employs a dedicated read offset register pointer. (The read
and write pointers operate independently).
A read and a write should not be performed simultaneously
to the offset registers.
FIRST LOAD (
FLFL
FLFL
FL
)
FL
is grounded to indicate operation in the Single Device or
Width Expansion mode. In the Depth Expansion configuration,
FL
is grounded to indicate it is the first device loaded and is set
to HIGH for all other devices in the Daisy Chain. (See Operating
Configurations for further details.)
WRITE EXPANSION INPUT (
WXIWXI
WXIWXI
WXI
)
This is a dual purpose pin.
WXI
is grounded to indicate
operation in the Single Device or Width Expansion mode.
WXI
is connected to Write Expansion Out (
WXO
) of the previous
device in the Daisy Chain Depth Expansion mode.
READ EXPANSION INPUT (
RXIRXI
RXIRXI
RXI
)
This is a dual purpose pin.
RXI
is grounded to indicate
operation in the Single Device or Width Expansion mode.
RXI
is connected to Read Expansion Out (
RXO
) of the previous
device in the Daisy Chain Depth Expansion mode.
OUTPUTS:
FULL FLAG (
FFFF
FFFF
FF
)
When the FIFO is full,
FF
will go LOW, inhibiting further
write operations. When
FF
is HIGH, the FIFO is not full. If no
reads are performed after a reset,
FF
will go LOW after D
writes to the FIFO.
D = 256 writes for the IDT72205LB, 512 for
the IDT72215LB, 1,024 for the IDT72225LB, 2,048 for the
IDT72235LB and 4,096 for the IDT72245LB.
The
FF
is updated on the LOW-to-HIGH transition of the
write clock (WCLK).
Number of Words in FIFO Memory
72205 72215 72225 72235 72245
FFFF
FFFF
FF PAFPAF
PAFPAF
PAF HFHF
HFHF
HF PAEPAE
PAEPAE
PAE EFEF
EFEF
EF
000 0 0HHHLL
1 to n(1) 1 to n(1) 1 to n(1) 1 to n(1) 1 to n(1) HH H LH
(n + 1) to 128 (n + 1) to 256 (n + 1) to 512 (n + 1) to 1,024 (n + 1) to 2,048 H H H H H
129 to (256-(m+1)) 257 to (512-(m+1)) 513 to (1,024-(m+1)) 1,025 to (2,048-(m+1)) 2,049 to (4,096-(m+1)) H H L H H
(256-m)(2) to 255 (512-m)(2) to 511 (1,024-m)(2) to 1,023 (2,048-m)(2) to 2,047 (4,096-m)(2) to 4,095 H L L H H
256 512 1,024 2,048 4,096 L L L H H
NOTES: 2766 tbl 09
1. n = Empty Offset (Default Values : IDT72205 n=31, IDT72215 n = 63, IDT72225/72235/72245 n = 127)
2. m = Full Offset (Default Values : IDT72205 n=31, IDT72215 n = 63, IDT72225/72235/72245 n = 127)
TABLE I — STATUS FLAGS
EMPTY FLAG (
EFEF
EFEF
EF
)
When the FIFO is empty,
EF
will go LOW, inhibiting further
read operations. When
EF
is HIGH, the FIFO is not empty.
The EF is updated on the LOW-to-HIGH transition of the
read clock (RCLK).
PROGRAMMABLE ALMOST-FULL FLAG (
PAFPAF
PAFPAF
PAF
)
The Programmable Almost-Full Flag (
PAF
) will go LOW
when FIFO reaches the Almost-Full condition. If no reads are
performed after Reset (
RS
), the
PAF
will go LOW after (256-m)
writes for the IDT72205LB, (512-m) writes for the IDT72215LB,
(1,024-m) writes for the IDT72225LB, (2,048–m) writes for the
IDT72235LB and (4,096–m) writes for the IDT72245LB. The
offset “m” is defined in the FULL offset register.
If there is no Full offset specified, the
PAF
will be LOW when
the device is 31 away from completely full for IDT72205LB, 63
away from completely full for IDT72215LB, and 127 away from
completely full for IDT72225LB/72235LB/72245LB.
The
PAF
is asserted LOW on the LOW-to-HIGH transition
of the write clock (WCLK).
PAF
is reset to HIGH on the LOW-
to-HIGH transition of the read clock (RCLK). Thus
PAF
is
asynchronous.
PROGRAMMABLE ALMOST-EMPTY FLAG (
PAEPAE
PAEPAE
PAE
)
The Programmable Almost-Empty Flag (
PAE
) will go LOW
when the read pointer is “n+1” locations less than the write
pointer. The offset “n” is defined in the EMPTY offset register.
If there is no Empty offset specified, the Programmable
Almost-Empty Flag (
PAE
) will be LOW when the device is 31
away from completely empty for IDT72205LB, 63 away from
completely empty for IDT72215LB, and 127 away from com-
pletely empty for IDT72225LB/72235LB/72245LB.
The
PAE
is asserted LOW on the LOW-to-HIGH transition
of the read clock (RCLK).
PAE
is reset to HIGH on the LOW-
to-HIGH transition of the write clock (WCLK). Thus
PAE
is
asynchronous.
WRITE EXPANSION OUT/HALF-FULL FLAG (
WXOWXO
WXOWXO
WXO
/
HFHF
HFHF
HF
)
This is a dual-purpose output. In the Single Device and
Width Expansion mode, when Write Expansion In (
WXI
) and
Read Expansion In (
RXI
) are grounded, this output acts as an
indication of a half-full memory.
8
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
After half of the memory is filled, and at the LOW-to-HIGH
transition of the next write cycle, the Half-Full Flag goes LOW
and will remain set until the difference between the write
pointer and read pointer is less than or equal to one half of the
total memory of the device. The Half-Full Flag (
HF
) is then
reset to HIGH by the LOW-to-HIGH transition of the read clock
(RCLK). The
HF
is asynchronous.
In the Daisy Chain Depth Expansion mode,
WXI
is connected
to
WXO
of the previous device. This output acts as a signal to the
next device in the Daisy Chain by providing a pulse when the
previous device writes to the last location of memory.
READ EXPANSION OUT (
RXORXO
RXORXO
RXO
)
In the Daisy Chain Depth Expansion configuration, Read
Expansion In (
RXI
) is connected to Read Expansion Out (
RXO
)
of the previous device. This output acts as a signal to the next
device in the Daisy Chain by providing a pulse when the
previous device reads from the last location of memory.
DATA OUTPUTS (Q0-Q17)
Q0-Q17 are data outputs for 18-bit wide data.
, ,
,
, ,
t
t
t
t
RSF
RSF
RS
RSR
Q
0
- Q
17
t
RSF
= 0
= 1
(1)
2766 drw 06
t
RSS
NOTES:
1. After reset, the outputs will be LOW if
OE
= 0 and tri-state if
OE
= 1.
2. The clocks (RCLK, WCLK) can be free-running during reset.
Figure 4. Reset Timing(2)
9
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
Figure 6. Read Cycle Timing
NOTES:
1. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that
FF
will go HIGH during the current clock cycle. If the
time between the rising edge of RCLK and the rising edge of WCLK is less than tSKEW1, then
FF
may not change state until the next WCLK edge.
WCLK
D
0
- D
17
t
CLK
t
CLKH
t
CLKL
t
DS
t
ENS
t
DH
t
ENH
t
WFF
t
WFF
DATA IN VALID
NO OPERATION
RCLK
SKEW1
t
(1)
2766 drw 07
Figure 5. Write Cycle Timing
NOTE:
1. tSKEW2 is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that
EF
will go HIGH during the current clock cycle. If the
time between the rising edge of WCLK and the rising edge of RCLK is less than tSKEW2, then
EF
may not change state until the next RCLK edge.
NO OPERATION
RCLK
t
CLK
t
CLKH
t
CLKL
t
ENS
t
ENH
t
REF
t
REF
VALID DATA
t
A
t
OLZ
t
OE
t
OHZ
Q
0
- Q
17
WCLK
SKEW2
t
(1)
2766 drw 08
10
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
Figure 7. First Data Word Latency after Reset with Simultaneous Read and Write
Figure 8. Full Flag Timing
WCLK
D
0
- D
17
RCLK
Q
0
- Q
17
t
DS
t
SKEW2
t
ENS
t
REF
t
A
012 3
D
DDD
01
DD
(first valid write)
t
OE
t
OLZ
t
A
t
FRL(1)
D
4
t
ENS
2766 drw 09
NOTE:
1. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that
FF
will go HIGH during the current clock cycle. If the
time between the rising edge of RCLK and the rising edge of WCLK is less than tSKEW1, then
FF
may not change state until the next WCLK edge.
DATA READ
WCLK
D
0
- D
17
RCLK
Q
0
- Q
17
t
A
t
WFF
DATA WRITE
t
WFF
t
ENH
t
ENS
t
DS
t
WFF
t
DS
DATA
WRITE
NEXT DATA READ
t
A
NO WRITE NO WRITE
DATA IN OUTPUT REGISTER
LOW
t
SKEW1
(1)
t
SKEW1
(1)
t
ENH
t
ENS
2766 drw 10
NOTES:
1. When tSKEW2 minimum specification, tFRL (maximum) = tCLK + tSKEW2. When tSKEW2 < minimum specification, tFRL (maximum) = either
2*tCLK + tSKEW2 or tCLK + tSKEW2. The Latency Timing applies only at the Empty Boundary (
EF
= LOW).
2. The first word is available the cycle after
EF
goes HIGH, always.
11
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
NOTE:
1. When tSKEW2 minimum specification, tFRL (maximum) = tCLK + tSKEW2. When tSKEW2 < minimum specification, tFRL (maximum) = either 2 * tCLK + tSKEW2,
or tCLK + tSKEW2. The Latency Timing apply only at the Empty Boundary (
EF
= LOW).
Figure 9. Empty Flag Timing
Figure 11. Read Programmable Registers
WCLK
D
0
- D
17
RCLK
Q
0
- Q
17
t
DS
t
ENS
t
A
t
SKEW2
DATA WRITE 1
DATA READ
t
ENH
t
REF
t
DS
t
ENS
DATA WRITE 2
t
ENH
t
REF
DATA IN OUTPUT REGISTER
t
FRL(1)
LOW
2766 drw 11
t
REF
t
SKEW2
t
FRL(1)
WCLK
t
CLKH
t
CLKL
t
CLK
t
ENS
t
ENH
LD
WEN
D
0
–D
15
t
DS
t
DH
PAE OFFSET PAF OFFSET D
0
–D
11
PAE OFFSET
t
ENS
2766 drw 12
Figure 10. Write Programmable Registers
RCLK
t
CLKH
t
CLKL
t
CLK
t
ENS
t
ENH
Q
0
–Q
15
PAE OFFSET PAF OFFSET PAE OFFSET
UNKNOWN
t
A
t
ENS
2766 drw 13
12
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
WCLK
t
CLKH
t
CLKL
t
ENS
t
ENH
t
ENS
t
PAE n + 1 words in FIFO n words in FIFO
RCLK t
PAE
2766 drw 14
NOTE:
1. n =
PAE
offset. Number of data words written into FIFO already = n.
Figure 12. Programmable Almost-Empty Flag Timing
WCLK t
CLKH
t
CLKL
t
ENS
t
ENH
t
ENS
t
PAF
D – m + 1 words
in FIFO memory
RCLK t
PAF
(1)
2766 drw 15
D – m words
in FIFO memory
(2) (1)
D – m + 1 words in FIFO memory
(1)
NOTES:
1. m =
PAF
offset. D = maximum FIFO Depth. Number of data words written into FIFO memory = 256 - m + 1 for the IDT72205, 512 -m + 1 for the IDT72215,
1,024-m+1 for the IDT72225, 2,048-m+1 for the IDT72235 and 4,096-m+1 for the IDT72245.
2.
256 - m words in IDT72205, 512 - m words in IDT72215, 1,024 - m words in IDT72225, 2,048 - m words in IDT72235 and 4,096 - m words in IDT72245.
Figure 13. Programmable Almost-Full Flag Timing
WCLK
t
ENS
t
ENH
t
ENS
t
HF
RCLK
t
HF
D/2 words in
FIFO memory
(1)
2766 drw 16
D/2 + 1 words in
FIFO memory
(2)
D/2 words in FIFO memory
(1)
t
CLKL
t
CLKH
NOTE:
1. D = maximum FIFO Depth = 256 words for the IDT72205, 512 words for the IDT72215, 1,024 words for the IDT72225, 2,048 words for the IDT72235 and
4,096 words for the IDT72245.
Figure 14. Half-Full Flag Timing
13
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
WCLK
t
ENS
t
CLKH
t
XO
Note 1 t
XO
2766 drw 17
NOTE:
1. Write to Last Physical Location.
Figure 18. Read Expansion In Timing
RCLK
t
ENS
t
CLKH
t
XO
Note 1 t
XO
2766 drw 18
RCLK
t
t
XI
XIS
2766 drw 20
NOTE:
1. Read from Last Physical Location. Figure 16. Read Expansion Out Timing
Figure 15. Write Expansion Out Timing
Figure 17. Write Expansion In Timing
WCLK
t
XI
t
XIS
2766 drw 19
14
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
OPERATING CONFIGURATIONS
SINGLE DEVICE CONFIGURATION
A single IDT72205LB/72215LB/72225LB/72235LB/72245LB
may be used when the application requirements are for 256/
512/1,024/2,048/4,096 words or less. These FIFOs are in a
single Device Configuration when the First Load (
FL
), Write
Expansion In (
WXI
) and Read Expansion In (
RXI
) control inputs
are grounded (Figure 19).
Figure 19. Block Diagram of Single 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, 4,096 x 18 Synchronous FIFO
NOTE:
1. Do not connect any output control signals directly together.
Figure 20. Block Diagram of 256 x 36, 512 x 36, 1,024 x 36, 2,048 x 36, 4,096 x 36
Synchronous FIFO Memory Used in a Width Expansion Configuration
WRITE CLOCK (WCLK)
WRITE ENABLE ( )READ CLOCK (RCLK)
READ ENABLE ( )
LOAD ( )OUTPUT ENABLE ( )
DATA IN (D
0
- D
17
)DATA OUT (Q
0
- Q
17
)
FULL FLAG ( )
PROGRAMMABLE ( )
HALF-FULL FLAG ( )
EMPTY FLAG ( )
PROGRAMMABLE ( )
RESET ( )
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
2766 drw 21
FIRST LOAD ( ) READ EXPANSION IN ( )
WRITE EXPANSION IN ( )
WRITE CLOCK (WCLK)
WRITE ENABLE ( )
READ CLOCK (RCLK)
READ ENABLE ( )
LOAD ( )OUTPUT ENABLE ( )
DATA IN (D)
DATA OUT (Q)
FULL FLAG ( )
PROGRAMMABLE ( )
HALF FULL FLAG ( )EMPTY FLAG ( )
PROGRAMMABLE ( )
RESET ( )
72205LB
72215LB
72225LB
72235LB
72245LB
72205LB
72215LB
72225LB
72235LB
72245LB
RESET ( )
36
36
18 18
18
18
2766 drw 22
FIRST LOAD ( )
READ EXPANSION IN ( )
WRITE EXPANSION IN ( )
WIDTH EXPANSION CONFIGURATION
Word width may be increased simply by connecting together
the control signals of multiple devices. Status flags can be
detected from any one device. The exceptions are the Empty
Flag and Full Flag. Because of variations in skew between
RCLK and WCLK, it is possible for flag assertion and deassertion
to vary by one cycle between FIFOs. To avoid problems the
user must create composite flags by ANDing the Empty Flags
of every FIFO, and separately ANDing all Full Flags. Figure 20
demonstrates a 36-word width by using two IDT72205B/72215B/
72225B/72235B/72245Bs. Any word width can be attained by
adding additional IDT72205B/72215B/72225B/72235B/
72245Bs. Please see the Application Note AN-83.
15
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18-BIT, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
DEPTH EXPANSION CONFIGURATION
(WITH PROGRAMMABLE FLAGS)
These devices can easily be adapted to applications requir-
ing more than 256/512/1,024/2,048/4,096 words of buffering.
Figure 21 shows Depth Expansion using three IDT72205LB/
72215LB/72225LB/72235LB/72245LBs. Maximum depth is
limited only by signal loading. Follow these steps:
1. The first device must be designated by grounding the
First Load (
FL
) control input.
2. All other devices must have
FL
in the HIGH state.
3. The Write Expansion Out (
WXO
) pin of each device
must be tied to the Write Expansion In (
WXI
) pin of
the next device. See Figure 21.
4. The Read Expansion Out (
RXO
) pin of each device
must be tied to the Read Expansion In (
RXI
) pin of
the next device. See Figure 21.
5. All Load (
LD
) pins are tied together.
6. The Half-Full Flag (
HF
) is not available in this Depth
Expansion Configuration.
7.
EF
,
FF
,
PAE
, and
PAF
are created with composite
flags by ORing together every respective flags for
monitoring. The composite
PAE
and
PAF
flags are not
precise.
Figure 21. Block Diagram of 768 x 18, 1,536 x 18, 3,072 x 18, 6,144 x 18, 12,288 x 18 Synchronous
FIFO Memory With Programmable Flags used in Depth Expansion Configuration
LOAD
WRITE CLOCK
WRITE ENABLE
READ CLOCK
READ ENABLE
OUTPUT ENABLE
DATA IN DATA OUT
RESET
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
FIRST LOAD ( )
Vcc
Vcc
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
2766 drw 23
RCLK
WCLK
RCLK
WCLK
RCLK
WCLK
Dn Qn
Dn Qn
Dn Qn
16
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFO™
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 Commercial And Industrial Temperature Ranges
ORDERING INFORMATION
NOTE:
1. Industrial temperature range is available as standard product for the 15ns and the 25 ns speed grade.
IDT XXXXX
Device Type X
Power XX
Speed X
Package X
BLANK
I
J
PF
TF
10
15
25
LB
72205
72215
72225
72235
72245
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
Plastic Leaded Chip Carrier (PLCC, J68-1)
Thin Plastic Quad Flatpack (TQFP, PN64-1)
Slim Thin Plastic Quad Flatpack (STQFP, PP64-1)
Commercial Only
Commercial & Industrial
Commercial & Industrial
Low Power
256 x 18 Synchronous FIFO
512 x 18 Synchronous FIFO
1,024 x 18 Synchronous FIFO
2,048 x 18 Synchronous FIFO
4,096 x 18 Synchronous FIFO
Clock Cycle Time (t
CLK
)
Speed in Nanoseconds
Process /
Temperature
Range
2766 drw 24
(1)