NTE558
General Purpose Fast Recovery Silicon Rectifier
Description:
The NTE558 is a general purpose silicon rectifier in a DO41 type case designed for low high voltage
fast recovery applications.
Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM 1500V.............................................
DC Blocking Voltage, VR1500V..........................................................
RMS Reverse Voltage, VR(RMS) 1050V....................................................
Average Rectified Forward Current. IO
(Single Phase, Resistive Load, 60Hz, TA = +75C) 0.5A...............................
Peak Forward Surge Current, IFSM
(8.3ms Single Half SineWave Superimposed on Rated Load) 30A.....................
Operating Junction Temperature Range, TJ55 to +150C..................................
Storage Temperature Range, Tstg 55 to +150C..........................................
Electrical Characteristics: (TA = +25C unless otherwise specified. Single Phase, Half Wave,
60Hz, Resistve or Inductive Load)
Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Instantaneous Forward
Voltage Drop
VFIO = 500mA, TJ = +50C 2.4 V
Maximum DC Reverse Current IRVR = 1500V, TA = +25C 5A
Maximum FullCycle Average
ReverseCurrent
IR(AV) Full Cycle, TL +55C,
.375” (9.5mm) lead length
100 A
Maximum Reverse Recovery Time trr IF = 500mA, IR = 1A, IRR = 250mA 500 ns
Typical Junction capacitance CNote 1 20 pF
Note 1. Measured at 1MHz and applied reverse voltage of 4V.
Color Band Denotes Cathode
1.100
(27.94)
Min
.210 (5.33)
Max
.107 (2.72) Dia Max.034 (0.87) Dia Max
Rev. 516