VS-GT50TP60N
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-17 1Document Number: 94666
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Half Bridge IGBT Power Module, 600 V, 50 A
FEATURES
•Low V
CE(on) trench IGBT technology
• 5 μs short circuit capability
•V
CE(on) with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (direct copper
bonding) technology
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS (uninterruptable power supply)
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature
PRIMARY CHARACTERISTICS
VCES 600 V
IC at TC = 80 °C 50 A
VCE(on) (typical)
at IC = 50 A, 25 °C 1.65 V
Speed 8 kHz to 30 kHz
Package INT-A-PAK
Circuit configuration Half bridge
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 600 V
Gate to emitter voltage VGES ± 20
Collector current IC
TC = 25 °C 85
A
TC = 80 °C 50
Pulsed collector current ICM (1) tp = 1 ms 100
Diode continuous forward current IFTC = 80 °C 50
Diode maximum forward current IFM (1) tp = 1 ms 100
Maximum power dissipation PDTJ = 175 °C 208 W
Short circuit withstand time tSC TC = 125 °C 5 μs
RMS isolation voltage VISOL f = 50 Hz, t = 1 min 4000 V
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(BR)CES TJ = 25 °C 600 - -
VCollector to emitter voltage VCE(on)
VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.65 2.10
VGE = 15 V, IC = 50 A, TJ = 175 °C - 2.05 -
Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 1.4 mA, TJ = 25 °C 4.0 4.9 6.5
Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 1.0 mA
Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA
VS-GT50TP60N
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-17 2Document Number: 94666
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time td(on)
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
VGE = ± 15 V, TJ = 25 °C
-58-
ns
Rise time tr-31-
Turn-off delay time td(off) -80-
Fall time tf- 100 -
Turn-on switching loss Eon -0.41- mJ
Turn-off switching loss Eoff -0.42-
Turn-on delay time td(on)
VCC = 300 V, IC = 50 A, Rg = 3.3 ,
VGE = ± 15 V, TJ = 125 °C
-64-
ns
Rise time tr-37-
Turn-off delay time td(off) -90-
Fall time tf- 117 -
Turn-on switching loss Eon -0.69- mJ
Turn-off switching loss Eoff -0.69-
Input capacitance Cies
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
-3.03-
nFOutput capacitance Coes -0.25-
Reverse transfer capacitance Cres -0.09-
SC data ISC tp 5 μs, VGE = 15 V, TJ = 125 °C,
VCC = 360 V, VCEM 600 V - 450 - A
Stray inductance LCE - - 30 nH
Module lead resistance, terminal to chip RCC’+EE’ -0.75- m
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Forward voltage VFIF = 50 A TJ = 25 °C - 1.35 1.75 V
TJ = 125 °C - 1.37 -
Reverse recovery charge Qrr
IF = 50 A, VR = 300 V,
RG = 3.3 
VGE = -15 V
TJ = 25 °C - 2.3 - μC
TJ = 125 °C - 4.3 -
Peak reverse recovery current Irr
TJ = 25 °C - 33 - A
TJ = 125 °C - 58 -
Reverse recovery energy Erec
TJ = 25 °C - 0.56 - mJ
TJ = 125 °C - 1.11 -
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature range TJ- - 175 °C
Storage temperature range TStg -40 - 125 °C
Junction to case
per ½ module
IGBT RthJC
- - 0.72
K/WDiode - - 1.02
Case to sink (Conductive grease applied) RthCS -0.05-
Mounting torque Power terminal screw: M5 2.5 to 5.0 Nm
Mounting screw: M6 3.0 to 5.0
Weight Weight of module - 150 - g
VS-GT50TP60N
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-17 3Document Number: 94666
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
Fig. 4 - IGBT Switching Loss vs. RG
Fig. 5 - RBSOA
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5
25 °C
175 °C
VGE = 15 V
VCE (V)
IC (A)
E (mJ)
IC (A)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 102030405060708090100
VGE = ± 15 V
TJ = 125 °C
RG = 3.3 Ω
VCC = 300 V
Eon
Eoff
VGE (V)
IC (A)
0
10
20
30
40
50
60
70
80
90
100
4567891011
175 °C
25 °C
VCE (V) = 50 V
RG (Ω)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 5 10 15 20 25 30 35
VGE = ± 15 V
TJ = 125 °C
IC = 50 A
VCC = 300 V
Eon
Eoff
VCE (V)
IC (A)
0
20
40
60
80
100
120
0 100 200 300 400 500 600 700
Module
VGE = ± 15 V
TJ = 125 °C
RG = 3.3 Ω
VS-GT50TP60N
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-17 4Document Number: 94666
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF
Fig. 9 - Diode Switching Loss vs. RG
Z
thJC
(K/W)
t (s)
0.01
0.1
1
0111.010.0100.0
IGBT
i: 1 2 3 4
ri[K/W]: 0.0432 0.2376 0.2304 0.2088
[s]: 0.01 0.02 0.05 0.1
i
τ
I
F
(A)
E (mJ)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 102030405060708090100
VGE = - 15 V
TJ = 125 °C
RG = 3.3 Ω
VCC = 300 V
Erec
R
G
(Ω)
E (mJ)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0 5 10 15 20 25 30 35
Erec
VGE = - 15 V
TJ = 125 °C
IF = 50 A
VCC = 300 V
VS-GT50TP60N
www.vishay.com Vishay Semiconductors
Revision: 18-Sep-17 5Document Number: 94666
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95524
t (s)
Z
thJC
(K/W)
0.01
0.1
1
10
0.001 0.01 0.1 110
Diode
i: 1 2 3 4
ri
i[s]: 0.01 0.02 0.05 0.1
[K/W]: 0.0612 0.3366 0.3264 0.2958
τ
1
6
7
3
2
5
4
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 06-Aug-12 1Document Number: 95524
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
INT-A-PAK
DIMENSIONS in millimeters (inches)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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