FDD8880 - ON SEMICONDUCTOR - Datasheet.Directory

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FDD8880

N-Channel PowerTrench® MOSFET

30V, 58A, 9mΩ

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

rDS(ON) and fast switching speed.

Applications

• DC/DC converters

Features

•r

DS(ON) = 9mΩ, VGS = 10V, ID = 35A

•r

DS(ON) = 12mΩ, VGS = 4.5V, ID = 35A

• High performance trench technology for extremely low

rDS(ON)

• Low gate charge

• High power and current handling capability

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteris tics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

VDSS Drain to Source Voltage 30 V

VGS Ga te to Sou rce Voltage ±20 V

Drain Current 58 A

Continuous (TC = 25oC, VGS = 10V) (Note 1)

Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 51 A

Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) 13 A

Pulsed Figure 4 A

EAS Single Pulse Avalanche Energy (Note 2) 53 mJ

PDPower dissipation 55 W

Derate abov e 25oC0.37W/

TJ, TSTG Operating and Storage Temperature -55 to 175 oC

RθJC Thermal Resistance Junction to Case TO-252 2.73 oC/W

RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W

RθJA Thermal Resistance Junction to Ambient T O-252, 1in2 copper pad area 52 oC/W

Device Marking Device Packag e Reel Size Tape Width Quantity

FDD8880 FDD8880 TO-252AA 13” 16mm 2500 units

TO-252

D-PAK

(TO-252)

• RoHS Compliant

March 2015

FDD8880

Electrical Characteristics TC = 25°C unless otherwise noted

Off Characteristics

On Characteri st ics

Dynamic Characteristics

Switching Characteristics (VGS = 10V)

Drain-Source Diode Characteristics

Notes:

1: Package current limitation is 35A.

2: Starting TJ = 25°C, L = 0.14mH, IAS = 28A, VDD = 27V, VGS = 10V.

Symbol Par a m e ter Test Conditions Min Typ Max Units

BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

IDSS Zero Gate Voltag e Drain Current VDS = 24V - - 1 µA

VGS = 0V TC = 150oC - - 250

IGSS Gate to Source Leakage Current V GS = ±20V - - ±100 nA

VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

rDS(ON) D rain to Source On Resistance

ID = 35A, VGS = 10V - 0.007 0.009

Ω

ID = 35A, VGS = 4.5V - 0.009 0.012

ID = 35A, VGS = 10V,

TJ = 175oC- 0.013 0.015

CISS Input Capacitance VDS = 15V, VGS = 0V,

f = 1M H z

- 1260 - pF

COSS Output Capacitance - 260 - pF

CRSS Rev erse Transfer Capacitance - 150 - pF

RGGate Resista n ce VGS = 0.5V, f = 1M H z - 2.3 - Ω

Qg(TOT) Total Gate Charge at 10V V GS = 0V to 10V

VDD = 15V

ID = 35A

Ig = 1.0mA

-2331nC

Qg(5) Total Gate Charge at 5V V GS = 0V to 5V - 13 17 nC

Qg(TH) Threshold Gate Charge V GS = 0V to 1V - 1.3 1.7 nC

Qgs Gate to Sour ce Ga te Ch a rge - 3.8 - nC

Qgs2 Gate Charge Threshold to Plateau - 2.5 - nC

Qgd Gate to Drai n “Miller” Charge - 5.0 - nC

tON Turn-On Time

VDD = 15V, ID = 35A

VGS = 10V, RGS = 10Ω

- - 147 ns

td(ON) Tur n-On Delay Time - 8 - ns

trRi s e Time - 9 1 - ns

td(OFF) Turn-Off Delay Time - 38 - ns

tfFa ll T ime - 3 2 - n s

tOFF Turn-Off Time - - 108 ns

VSD Source to Drain Diode Voltage ISD = 35A - - 1.25 V

ISD = 15A - - 1.0 V

trr Reverse Recov ery T ime ISD = 35A, dISD/dt = 100A/µs- -27ns

QRR Reverse Recov ered Charge ISD = 35A, dISD/ dt = 100A/µs- -14nC

FDD8880

Typical Characteristics TC = 25°C unless otherwise noted

Figure 1. Normalized Powe r Dis sip ation vs Case

Temperature Figure 2. Maxim um Contin uous Drain Current vs

Case Temp erature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

00 25 50 75 100 175

0.2

0.4

0.6

0.8

1.0

1.2

125 150 0

25 50 75 100 125 150 175

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

CURRENT LIMITED

BY PACKAGE

VGS = 4.5V

VGS = 10V

0.1

10-5 10-4 10-3 10-2 10-1 100101

0.01

t, RECTANGULAR PULSE DURATION (s)

ZθJC, NORMALIZED

THERMAL IMPEDANCE

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

t1t2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

100

500

IDM, PEAK CURRENT (A)

t, PULSE WIDTH (s)

10-5 10-4 10-3 10-2 10-1 100101

TC = 25oC

I = I25 175 - TC

150

FOR TEMPER AT URES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

VGS = 4.5V

VGS = 10V

FDD8880

Figure 5. Forward Bias Safe Operating Area NOTE: Ref er to Fair chil d Appli ca ti on Note s AN75 14 and AN75 15

Figure 6. Unclamped Inductive Switching

Capability

Figure 7. Transfer Characteristics Figure 8. Saturation Characteri stics

Figure 9 . Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature

Typical Characteristics TC = 25°C unless otherwise noted

0.1

100

1000

110

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

TJ = MAX RATED

TC = 25oC

SINGLE PULSE

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

10µs

1ms

100µs

10ms

100

0.01 0.1 1

500

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

STARTING TJ = 150oC

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]

1.5 2.0 2.5 3.0 3.5 4.0

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs

DUTY CYCLE = 0. 5% MAX

VDD = 15V

TJ = 175oC TJ = -55oC

TJ = 25oC

0 0.25 0.5 0.75 1.0

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TC = 25oC

VGS = 10V VGS = 4V

VGS = 3V

VGS = 5V

246810

ID = 1A

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 35A

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE (mΩ)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-80 -40 0 40 80 120 160 200

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

VGS = 10V, ID = 35A

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

FDD8880

Figure 11. Normalized Gate Threshold Voltage vs

Junction Tem peratu re Figure 12. Normalized Drain to Source

Breakdow n Voltage vs Junction Temperature

Figure 13. Capacitance vs Drain to Source

Voltage Figu re 14. Gate Charge Waveforms for Cons tant

Gate Current

Typical Characteristics TC = 25°C unless otherwise noted

0.4

0.6

0.8

1.0

1.2

-40 0 40 80 120 160 200-80

VGS = VDS, ID = 250µA

NORMALIZED GATE

TJ, JUNCTION TEMPERATURE (oC)

THRESHOLD VOLTAGE

0.90

0.95

1.00

1.05

1.10

-80 -40 0 40 80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ID = 250µA

BREAKDOWN VOLTAGE

100

1000

0.1 1 10

2000

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

CISS = CGS + CGD

COSS ≅ CDS + CGD

CRSS = CGD

0 5 10 15 20 25

VGS, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC )

VDD = 15V

ID = 35A

ID = 1A

WAVEFORM S IN

DESCENDING ORDER:

FDD8880

Test Circuits and Waveforms

Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms

Figure 17. G ate Charge Test Circuit Figure 18. Gate Charge Waveforms

Figure 19. Switching Time Test Circuit Figure 20. Switching Time Waveforms

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS +

VDS

VDD

DUT

Ig(REF)

VDD

Qg(TH)

VGS = 1V

Qgs2

Qg(TOT)

VGS = 10V

VDS VGS

Ig(REF)

Qgs Qgd

Qg(5)

VGS = 5V

VGS

RGS

DUT

-VDD

VDS

VGS

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

FDD8880

Thermal Resistance vs. Mounting Pad Area

The maximum rated junction temperature, TJM, and the

thermal resistance of the heat dissipating path determines

the maximum allowable device power dissipation, PDM, in an

application. Therefore the application’s ambient

temperature, TA (oC), and thermal resistance RθJA (oC/W)

must be reviewed to ensure that TJM is never exceeded.

Equation 1 mathematically represents the relationship and

serves as the basis for establishing the rating of the part .

In using surface mount devices such as the TO-252

package, the environment in which it is applied will have a

significant influence on the part’s current and maximum

power dissipation ratings. Precise determination of PDM is

complex and influenced by many factors:

1. Mounting pad area onto which the device is at tached and

whether there is copper on one side or both sides of the

board.

2. The number of copper layers and the thickness of the

board.

3. The use of external heat sinks.

4. The use of thermal vias.

5. Air flow and board orientation.

6. For non steady state applications, the pulse width, the

duty cycle and the transient thermal response of the part,

the board and the environment they are in.

Fairchild provides thermal information to assist the

designer’s preliminary application evaluation. Figure 21

defines the RθJA for the device as a function of the top

copper (component side) area. This is for a horizontally

positioned FR-4 board with 1oz copper af ter 1000 seconds

of steady state power with no air flow. This graph provides

the necessary information for calculation of the steady state

junction temperature or power dissipation. Pulse

applications can be evaluated using the Fairchild device

Spice thermal model or manually utilizing the normalized

maximum transient thermal impedance curve.

Thermal resistances corresponding to other copper areas

can be obtained from Figure 21 or by calculation using

Equation 2 or 3. Equation 2 is used for c opper area def ined

in inches square and equation 3 is for area in centimeters

square. The area, in square inches or square centimeters is

the top copper area including the gate and sourc e pads.

(EQ. 1)

PDM

TJM TA

–()

RθJA

-----------------------------=

Area in Inches Squared

(EQ. 2)

RθJA 33.32 23.84

0.268 Area+()

-------------------------------------+

(EQ. 3)

RθJA 33.32 154

1.73 Area+()

----------------------------------+

Area in Centimeters Squared

100

125

0.01 0.1 1 10

Figure 21. Thermal Resist anc e vs Mounting

Pad Area

RθJA = 33.32+ 23.84/(0.268+Area) EQ.2

RθJA (oC/W)

AREA, TOP COPPER AREA in2 (cm2)

RθJA = 33.32+ 154/(1.73+Area) EQ.3

(0.645) (6.45) (64.5)(0.0645)

FDD8880

PSPICE Electrical Model

.SUBCKT FDD8880 2 1 3 ; rev April 2004

Ca 12 8 9.5e-10

Cb 15 14 9.5e-10

Cin 6 8 1.15e-9

Dbody 7 5 DbodyMOD

Dbreak 5 11 D breakMOD

Dplcap 10 5 DplcapMOD

Ebreak 11 7 17 18 33.15

Eds 14 8 5 8 1

Egs 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

Evtemp 20 6 18 22 1

It 8 17 1

Lgate 1 9 5.3e-9

Ldrain 2 5 1.0e-9

Lsou r c e 3 7 1. 7e-9

RLgate 1 9 53

RLdrai n 2 5 10

RLs ou r c e 3 7 17

Mmed 16 6 8 8 M m ed M OD

Mstro 16 6 8 8 MstroMOD

Mweak 16 21 8 8 MweakMOD

Rbreak 17 18 RbreakMOD 1

Rdrain 50 16 Rd rainMOD 3.2e-3

Rgate 9 20 2.2

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

Rsource 8 7 Rs ourceMOD 3.2e-3

Rvthres 22 8 RvthresMOD 1

Rvtemp 18 19 Rvt empMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1BMOD

S2a 6 15 1 4 13 S2AMOD

S2b 13 1 5 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}

.MODEL DbodyMOD D (IS=2E-12 IKF=10 N=1.01 RS=3.76e-3 TRS1=8e-4 TRS2=2e-7

+ CJO=4. 8e-10 M=0.55 TT=1e-17 XTI=2)

.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=- 8.9e-6)

.MODEL DplcapMOD D (CJO=5.5 e-10 IS=1e-30 N=10 M=0.45)

.MODEL MmedMOD NMOS (VTO=2.0 KP=10 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.2)

.MODEL MstroMOD NMOS (VTO=2.5 KP=170 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MweakMOD NMOS (VTO=1.69 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=22 RS=0. 1)

.MODEL RbreakMOD RES (TC1=8 .3e-4 TC2=-8e-7)

.MODEL RdrainMOD RES (TC1= 1.8e-3 TC2=8e-6)

.MODEL RSLCMOD RES (TC1=9e-4 TC2=1e-6)

.MODEL Rs ourceMOD RES (TC1=5e-3 TC2=1e-6)

.MODEL RvthresMOD RES (TC1=-1e-3 TC2=-8.2e-6)

.MODEL Rv tempMOD RES (TC1=-2.6e-3 TC2=2e-7)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.3 VOFF=-0.8)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.8 VOFF=-1.3)

.ENDS

Note : For furt her discuss ion of th e PSPIC E model, cons ult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electron ics Specialist Conf erence Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

FDD8880

SABER Electrical Model

rev April 2004

template FDD8880 n2,n1,n3

electrical n2,n1,n3

{

var i iscl

dp..model dbodymod = (isl=2e-12,ikf=10,nl=1.01,rs=3.76e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-17,xti=2)

dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.9e-6)

dp..model dplcapmod = (cjo=5.5e-10,isl=10e-30,nl=10,m=0.45)

m..model mmedmod = (type=_n,vto=2.0,kp=10,is=1e-30, tox=1)

m..model mstrongmod = ( type=_n,vto=2.5,kp=170,is=1e-30, tox=1)

m..model mweakmod = (type=_n,vto=1.69,kp=0.05,is=1e-30, tox=1,rs=0.1)

sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5)

sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4)

sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.3,voff=-0.8)

sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.8,voff=-1.3)

c.ca n12 n8 = 9.5e-10

c.cb n15 n14 = 9.5e-10

c.ci n n6 n8 = 1.15e-9

dp.dbody n7 n5 = model=dbo dymod

dp.dbreak n5 n11 = model =dbreakmod

dp.dplc ap n10 n5 = model=dplcapmod

spe.e break n11 n7 n17 n18 = 33.15

spe.eds n14 n8 n5 n8 = 1

spe.egs n13 n8 n6 n8 = 1

spe.esg n6 n10 n6 n8 = 1

spe.evthres n6 n21 n19 n8 = 1

spe.evtemp n20 n6 n18 n22 = 1

i.it n8 n17 = 1

l.lgate n1 n9 = 5.3e-9

l.ldrain n2 n5 = 1.0e-9

l.lsou rce n3 n7 = 1.7e-9

res.r l gate n1 n9 = 53

res.rldrain n2 n5 = 10

res.rlsource n3 n7 = 17

m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u

m.mstr ong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u

m.mweak n16 n21 n8 n8 = model=mwea kmod, l=1u, w=1u

res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-8e-7

res.rdrain n50 n16 = 3.2e-3, tc1=1.8e-3,tc2=8e-6

res.rgate n9 n20 = 2.2

res.rsl c1 n5 n5 1 = 1e-6, tc1=9e-4,tc2=1e-6

res.rsl c2 n5 n5 0 = 1e3

res.rsource n8 n7 = 3.2e-3, tc1=5e-3,tc2=1e-6

res.rvthres n22 n8 = 1, tc1=-1 e-3,tc2=-8.2e- 6

res.rvtemp n18 n19 = 1, tc1 =-2.6e-3,tc 2=2e-7

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod

sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod

sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod

sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc=1

equations {

i (n51- >n50) +=iscl

iscl: v( n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/170))** 5))

}

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ISCL

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

FDD8880

PSPICE Thermal Model

REV 23 April 2004

FDD8880T

CTHERM1 TH 6 8e-4

CTHERM2 6 5 1e-3

CTHERM3 5 4 2.5e-3

CTHERM4 4 3 2.6e-3

CTHERM5 3 2 8e-3

CTHERM6 2 TL 1.5e-2

RTHER M 1 TH 6 1.44 e- 1

RTHERM2 6 5 1.9e-1

RTHERM3 5 4 3.0e-1

RTHERM4 4 3 4.0e-1

RTHERM5 3 2 5.7e-1

RTHERM6 2 TL 5.8e-1

SABER Thermal Model

SABER thermal model FDD8880T

template thermal_model th tl

therma l _c th, tl

{

ctherm.ctherm1 th 6 =8 e-4

ctherm.ctherm2 6 5 =1e- 3

ctherm.ctherm3 5 4 =2.5e-3

ctherm.ctherm4 4 3 =2.6e-3

ctherm.ctherm5 3 2 =8e- 3

ctherm.ctherm6 2 tl =1.5e-2

rtherm. rtherm1 th 6 =1.44e-1

rtherm. rtherm2 6 5 =1.9e-1

rtherm. rtherm3 5 4 =3.0e-1

rtherm. rtherm4 4 3 =4.0e-1

rtherm. rtherm5 3 2 =5.7e-1

rtherm. rtherm6 2 tl =5.8e-1

}

RTHERM4

RTHERM6

RTHERM5

RTHERM3

RTHERM2

RTHERM1

CTHERM4

CTHERM6

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